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    BFY 90 Search Results

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    BFY 90 Price and Stock

    Microchip Technology Inc BFY90

    RF TRANS NPN 15V 1.3GHZ TO72
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    DigiKey BFY90 Bulk
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    Central Semiconductor Corp BFY90 PBFREE

    Transistor RF BJT NPN 15V 25mA 4-Pin TO-72 Box - Boxed Product (Development Kits) (Alt: BFY90 PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BFY90 PBFREE Box 2,000
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    Mouser Electronics BFY90 PBFREE 1,839
    • 1 $6.66
    • 10 $5.71
    • 100 $4.75
    • 1000 $3.77
    • 10000 $3.54
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    Central Semiconductor Corp BFY90

    Bipolar Transistor NPN RF Oscillator 25mA 30V 4-Pin TO-72 Through Hole Box - Boxed Product (Development Kits) (Alt: BFY90)
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    Avnet Americas BFY90 Box 2,000
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    Central Semiconductor Corp BFY90 TIN/LEAD

    Transistor RF BJT NPN 15V 25mA 4-Pin TO-72 Box - Boxed Product (Development Kits) (Alt: BFY90 TIN/LEAD)
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    Avnet Americas BFY90 TIN/LEAD Box 2,000
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    Mouser Electronics BFY90 TIN/LEAD
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    hfo BFY90

    TRANS GP BJT NPN 15V 0.05A 4-PIN TO-72 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN
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    ComSIT USA BFY90 600
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    BFY 90 Datasheets (51)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFY90 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    BFY90 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Pol=NPN / Pkg=TO72 / Vceo=15 / Ic=25m / Hfe=25-150 / fT(Hz)=1G / Pwr(W)=0.2 Original PDF
    BFY90 Philips Semiconductors NPN 1 GHz Wideband Transistor Original PDF
    BFY90 Semelab SILICON PLANAR EPITAXIAL NPN TRANSISTOR Original PDF
    BFY90 Advani-Oerlikon Television / Video Devices Scan PDF
    BFY90 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan PDF
    BFY90 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    BFY90 Diode Transistor NPN Small Signal Transistors Scan PDF
    BFY90 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    BFY90 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    BFY90 Ferranti Semiconductors RF Diodes and Transistors 1977 Scan PDF
    BFY90 Motorola European Master Selection Guide 1986 Scan PDF
    BFY90 Motorola The European Selection Data Book 1976 Scan PDF
    BFY90 Mullard Quick Reference Guide 1977/78 Scan PDF
    BFY90 Mullard Microwave Semiconductors 1970 Scan PDF
    BFY90 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFY90 Unknown Transistor Replacements Scan PDF
    BFY90 Unknown Transistor Replacements Scan PDF
    BFY90 Unknown Transistor Replacements Scan PDF
    BFY90 Unknown Transistor Replacements Scan PDF

    BFY 90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EN2997Y1

    Abstract: ESC10YE1
    Text: MIL-DTL-83723, Series III, Pyle I ESC10YE1 SJT EN2997Y1 / YE1 N Contact Stickout N Contact Stickout .281 7.13 38999 BTY/BFY/BNY-14 .109/.079 2.76/2.00 .062/.047 1.57/1.19 A M83723/90Y / M83723/90P II .904 Max. 22.96 Max. PART # III Hermetic Solder Mount/Weld Mount Receptacle,


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    PDF MIL-DTL-83723, ESC10YE1 EN2997Y1 BTY/BFY/BNY-14 M83723/90Y M83723/90P ESC11YE1 ESC10YE1

    Untitled

    Abstract: No abstract text available
    Text: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle BTY/BFY/BNY-17 N Contact Stickout ESC11YE2 26482 Solderwell Contacts J Coupling Thread Optional Eyelet Contacts 5015 † When fully mated with plug this band will be covered. Band is red on military types; can be red or blue on


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    PDF MIL-DTL-83723, BTY/BFY/BNY-17 ESC11YE2

    A03 transistor

    Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
    Text: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz


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    PDF Q62702F1609 Q62702F1713 BFY183 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor BFy 90 transistor microwave transducer marking code microwave

    BFy 90 transistor

    Abstract: No abstract text available
    Text: BFY 183 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at co currents from 2mA to 30mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.3 dB at 2 GHz • esa Space Qualified


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    40250

    Abstract: LB801R LB801 iact
    Text: BFY-02 系列电动浮球液位变送器 概述: 概述 BFYBFY-02 系列电动浮球液位变送器是 DDZ-Ⅲ型电动单元组 合仪表中的 一个变送单元。它采用 4~20mADC 标准二线制传输 方式,它具有结构简单调试方便、可靠性好、精度高、体积小


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    PDF BFY-02 BFYBFY-02 420mADC 24VDC JB/T82 2-94DN250 55g/cm3 1Cr18Ni9Ti ZL102 40250 LB801R LB801 iact

    2520P

    Abstract: schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420
    Text: GaAs Components HiRel Discretes and Microwave Semiconductors 11.4.1 Table 2 HiRel Silicon Diodes General Purpose Silicon Schottky Diodes Tj,max = 150 °C Max. Ratings Component type variant BAS 40-T1 VR IF Characteristics VBR VF Package RF CD Detail Spec. Type Variant


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    PDF 40-T1 70-T1 70B-HP HPAC140 2520P schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420

    bfy 40

    Abstract: STM 64 butterfly 7 pin GPO 80 Km upc 577 NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8564LE stm 64 laser diode 19pin NX8566LE
    Text: PRELIMINARY DATA SHEET LASER DIODE NX8560SJ Series EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS DESCRIPTION The NX8560SJ Series is an Electro-Absorption EA modulator and wavelength monitor integrated, 1 550 nm Multiple Quantum Well (MQW)


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    PDF NX8560SJ bfy 40 STM 64 butterfly 7 pin GPO 80 Km upc 577 NX8560LJ NX8560MC NX8560MCS NX8564LE stm 64 laser diode 19pin NX8566LE

    thermistor 220

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back


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    PDF NX8560LJ thermistor 220

    BFY56

    Abstract: BFY56A BFY 56A ft bfy BFY 20
    Text: BFY56 BFY56A SILICON PLANAR NPN A M P L IF IE R S A N D SW ITCHES The BFY 56 and BFY 56A are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are designed fo r am plifier and switching applications over a wide range o f voltage and current.


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    PDF BFY56 BFY56 BFY56A 1x10-" BFY56A BFY 56A ft bfy BFY 20

    BFY 94 transistor

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor BFY 90 • For broadband amplifiers up to 1 GHz and non-saturated switches at collector currents from 1 mA to 20 mA. € CECC-type available: GEGC 50002/253. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF Q62702-F297 235bQ5 0Db74Bl BFY 94 transistor

    BFY90

    Abstract: BFX89 89-1-c Transistor BFX 25 G-1932
    Text: BFY90 BFX89 SILICON PLANAR NPN W IDE B A N D V H F /U H F A M P L IF IE R S The BFX 89 and BFY 90 are silicon planar epitaxial NPN transistors in Jed ecT O -72 metal case, particularly designed fo r wide band com m o n-e m itter linear am plifier applications up


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    PDF BFY90 BFX89 G-1932 G-11133 BFX89 89-1-c Transistor BFX 25

    BFY90

    Abstract: Scans-0010548 BFy 90 transistor
    Text: IMPIM-Transistor fü r A n ten n en verstärker B F Y 90 BFY 90 ist ein epitaktischer NPN-Silizium-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist für allgemeine Anwendungen bis in den GHz-Bereich geeignet z.B. für Antennen- und Hochfrequenz­


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    PDF BFY90 Q62702-F297 Scans-0010548 BFy 90 transistor

    SO-104

    Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
    Text: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5


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    PDF BLW11 O-131 O-129 O-117 SO-104 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87

    BFY45

    Abstract: BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4
    Text: BFY45 Not for new d e v e lo p m e n t NPN Transistor for lower-pow er switching applications The B F Y 45 is a silicon double-diffused NPN planar transistor in a case 5 C 3 DIN 41873 TO-39 . The collector is electrically connected to the case. The BFY 45 is designed for low power, high voltage switching applications, e.g. for


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    PDF BFY45 BFY45 60206-Y45 BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4

    transistor bf 184

    Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
    Text: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958


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    PDF 5109B O-92a transistor bf 184 pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451

    bs33

    Abstract: 35-130 BSS 130 BSS 97 BFR20 BFR21 BFX39 BFX95A BFX97A BFY56
    Text: PROFESSIONAL TRANSISTORS > _1 ro E UJ lL JZ. W U mA < £ _u > PACKAGE >» ~c > ia lc RANGE TYPE an d Q. uoJ UJ o (SU ) 'H i E > (SU) P O L A R IT Y General purpose switches BFR20 BFR21 NPN 35 _ 130 450 90/250 0.13 150 0.1-1000 T O -39 NPN 70 - 130 450 40/70


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    PDF BS33A BFR20 BFR21 BFX39 100TO-39 BFX97A 15/2N 16/2N 17/2N 18/2N bs33 35-130 BSS 130 BSS 97 BFX95A BFY56

    bss17

    Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
    Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN


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    PDF BFR10 BFR36 BFR96* 97/2N 98/TO-39 BFX97A 15/2N 16/2N 17/2N 18/2N bss17 BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97

    BFX97A

    Abstract: BFR11 BFR20 BFR21 BFX39 BFX94A BFX95A BFX96A BSX19 bsx30
    Text: PROFESSIONAL TRANSISTORS continued a. C o >* ~e E —I LU Ü. x: _ B F R 10 NPN 40 BFR11 BFX94A NPN NPN 40 30 - BFX95A BFX96A BFX97A BSS 26 BSV 15 BSV 16 BSV 59 BSV 77 BSV 89 BSV 90 BSV 91 BSV 92 BSV 95 BSX12 BSX 19 BSX 20 BSX 26 BSX 27 BSX 28 BSX 29 BSX 30


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    PDF ES33A BFR11 BFX94A BFX95A BFX96A BFX97A OTO-39 15/2N 16/2N BFR20 BFR21 BFX39 BSX19 bsx30

    UOJ 220

    Abstract: BFR18 bfx74a BFR16 BFW43 BFW44 BFX38 BFX39 BFX40 BFX41
    Text: 01 — - — — — — - 051? 051? 081? 081? 081? 03£ 0Z£ 081? 081? OOZ 003 005 009 90 OQL 09 L 99 99 99 — — — — 00 00 00 00 00 L 001 — 98 98 98 817 — 817 98 98 91 91 OZ OZ g n n L L L 9 9 91 10 01 8L 8L 91 91 91 9L 9 9 01 01 9ZL ZL 9'0 90


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    PDF T0-18 BFR16 NPNTO-39 UOJ 220 BFR18 bfx74a BFW43 BFW44 BFX38 BFX39 BFX40 BFX41

    BSY84

    Abstract: C 337-40 33740 npn 1W 40V to39 CA500 c 33740 BSY86 BC337 BC341 850mW
    Text: General Purpo/e Tran/i/ter/ r T Y P E NO. PD NPN >C BVc b O l v Ceo b v E bo @ T A = 2 5 °C v C E s a t @ I c / l B h p E @ V C E @ *C Cob m ax. m ax. m in ./max. f T @ •c C A SE m in. <§> <§> 1 20 V 120V 120V 120V 90V 80V 80V 80V 80V 60V 6V 6V 6V


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    PDF 850mW 150mA 120MHz BSY84 C 337-40 33740 npn 1W 40V to39 CA500 c 33740 BSY86 BC337 BC341

    Transistor BFR 96

    Abstract: BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A BFR10 BFR36
    Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X < o LU U_ .£= BFR10 N PN N PN BFR 11 NPIM B F R 36 BFR 37 N PN BFR 38 PNP BFR 90* NPN N PN BFR 91* B F R 96* N PN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN PNP


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    PDF BFR10 BFR36 BFR96* 97/2N Transistor BFR 96 BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A

    BFR 450

    Abstract: BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR36 BFR96
    Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95


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    PDF BFR10 BFR36 BFR96* 97/2N 98/BFX BFX18 BFR 450 BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR96

    gaas fet micro-X Package marking

    Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
    Text: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and


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    PDF

    BFR 450

    Abstract: BFR36 BFY 93 bft95 BFw 94 BFR10 BFR96 BFT95H BFW16A BFW17A
    Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95


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    PDF BFR10 BFR36 BFR96* 97/2N BFR16 BFX31 BFX37 BFW43 BFW44 BFX90 BFR 450 BFY 93 bft95 BFw 94 BFR96 BFT95H BFW16A BFW17A