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    BFY 90 TRANSISTOR Search Results

    BFY 90 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BFY 90 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A03 transistor

    Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
    Text: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz


    Original     		PDF Q62702F1609 Q62702F1713 BFY183 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor BFy 90 transistor microwave transducer marking code microwave

    BFy 90 transistor

    Abstract: No abstract text available
    Text: BFY 183 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at co currents from 2mA to 30mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.3 dB at 2 GHz • esa Space Qualified


    Original     		PDF

    BFY 94 transistor

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor BFY 90 • For broadband amplifiers up to 1 GHz and non-saturated switches at collector currents from 1 mA to 20 mA. € CECC-type available: GEGC 50002/253. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F297 235bQ5 0Db74Bl BFY 94 transistor

    BFY90

    Abstract: Scans-0010548 BFy 90 transistor
    Text: IMPIM-Transistor fü r A n ten n en verstärker B F Y 90 BFY 90 ist ein epitaktischer NPN-Silizium-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist für allgemeine Anwendungen bis in den GHz-Bereich geeignet z.B. für Antennen- und Hochfrequenz­


    OCR Scan     		PDF BFY90 Q62702-F297 Scans-0010548 BFy 90 transistor

    BFY90

    Abstract: BFX89 89-1-c Transistor BFX 25 G-1932
    Text: BFY90 BFX89 SILICON PLANAR NPN W IDE B A N D V H F /U H F A M P L IF IE R S The BFX 89 and BFY 90 are silicon planar epitaxial NPN transistors in Jed ecT O -72 metal case, particularly designed fo r wide band com m o n-e m itter linear am plifier applications up


    OCR Scan     		PDF BFY90 BFX89 G-1932 G-11133 BFX89 89-1-c Transistor BFX 25

    transistor BC 575

    Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
    Text: T E L E F U N K E N E L E C T R O N IC m D fllC fl'îSO Q 'îb 000533 b 3 BFY 90 Ml e l e c t r o n i c Creative Technologies Silicon NPN Epitaxial Planar R F Transistor Applications: General up to GHz range Features: • Power gain 8 dB 800 MHz • Noise figure < 5 dB


    OCR Scan     		PDF 569-GS transistor BC 575 BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90

    transistor bf 184

    Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
    Text: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958


    OCR Scan     		PDF 5109B O-92a transistor bf 184 pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451

    bs33

    Abstract: 35-130 BSS 130 BSS 97 BFR20 BFR21 BFX39 BFX95A BFX97A BFY56
    Text: PROFESSIONAL TRANSISTORS > _1 ro E UJ lL JZ. W U mA < £ _u > PACKAGE >» ~c > ia lc RANGE TYPE an d Q. uoJ UJ o (SU ) 'H i E > (SU) P O L A R IT Y General purpose switches BFR20 BFR21 NPN 35 _ 130 450 90/250 0.13 150 0.1-1000 T O -39 NPN 70 - 130 450 40/70


    OCR Scan     		PDF BS33A BFR20 BFR21 BFX39 100TO-39 BFX97A 15/2N 16/2N 17/2N 18/2N bs33 35-130 BSS 130 BSS 97 BFX95A BFY56

    BFY56

    Abstract: BFY56A BFY 56A ft bfy BFY 20
    Text: BFY56 BFY56A SILICON PLANAR NPN A M P L IF IE R S A N D SW ITCHES The BFY 56 and BFY 56A are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are designed fo r am plifier and switching applications over a wide range o f voltage and current.


    OCR Scan     		PDF BFY56 BFY56 BFY56A 1x10-" BFY56A BFY 56A ft bfy BFY 20

    bss17

    Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
    Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN


    OCR Scan     		PDF BFR10 BFR36 BFR96* 97/2N 98/TO-39 BFX97A 15/2N 16/2N 17/2N 18/2N bss17 BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97

    BFX97A

    Abstract: BFR11 BFR20 BFR21 BFX39 BFX94A BFX95A BFX96A BSX19 bsx30
    Text: PROFESSIONAL TRANSISTORS continued a. C o >* ~e E —I LU Ü. x: _ B F R 10 NPN 40 BFR11 BFX94A NPN NPN 40 30 - BFX95A BFX96A BFX97A BSS 26 BSV 15 BSV 16 BSV 59 BSV 77 BSV 89 BSV 90 BSV 91 BSV 92 BSV 95 BSX12 BSX 19 BSX 20 BSX 26 BSX 27 BSX 28 BSX 29 BSX 30


    OCR Scan     		PDF ES33A BFR11 BFX94A BFX95A BFX96A BFX97A OTO-39 15/2N 16/2N BFR20 BFR21 BFX39 BSX19 bsx30

    BFY90

    Abstract: 73180 Tfk 880 BFy 90 transistor
    Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den GHz-Bereich Applications: General up to the GHz range Besondere Merkmale: Features: • Leistungsverstärkung 8 dB 800 MHz • Power gain 8 dB (800 MHz)


    OCR Scan     		PDF -30dB BFY90 73180 Tfk 880 BFy 90 transistor

    Transistor BFR 96

    Abstract: BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A BFR10 BFR36
    Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X < o LU U_ .£= BFR10 N PN N PN BFR 11 NPIM B F R 36 BFR 37 N PN BFR 38 PNP BFR 90* NPN N PN BFR 91* B F R 96* N PN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN PNP


    OCR Scan     		PDF BFR10 BFR36 BFR96* 97/2N Transistor BFR 96 BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A

    BFY45

    Abstract: BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4
    Text: BFY45 Not for new d e v e lo p m e n t NPN Transistor for lower-pow er switching applications The B F Y 45 is a silicon double-diffused NPN planar transistor in a case 5 C 3 DIN 41873 TO-39 . The collector is electrically connected to the case. The BFY 45 is designed for low power, high voltage switching applications, e.g. for


    OCR Scan     		PDF BFY45 BFY45 60206-Y45 BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4

    BF441

    Abstract: BF509 BF 184 transistor BF 145 transistor BF440 BF 145 BF680 transistor BF 509 BFS20 BFS62
    Text: RF transistors Type Structure Silicon transistors Fifl. Nr. Maximum ratings Characteristics A c t a* I q anc ^CE V mA f j at MHz 48-167 1 10 a 27 4 10 7 a 38 67-220 1 36-125 1 10 30 25 £27 40 40 c iire a UCB V PF 230 1 0.65 10 350 4 0.15 10 550 260 200 5


    OCR Scan     		PDF BFS20 BFS62 BFX89 BFY88O BF441 BF509 BF 184 transistor BF 145 transistor BF440 BF 145 BF680 transistor BF 509

    BFR 450

    Abstract: BFR36 BFY 93 bft95 BFw 94 BFR10 BFR96 BFT95H BFW16A BFW17A
    Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95


    OCR Scan     		PDF BFR10 BFR36 BFR96* 97/2N BFR16 BFX31 BFX37 BFW43 BFW44 BFX90 BFR 450 BFY 93 bft95 BFw 94 BFR96 BFT95H BFW16A BFW17A

    UOJ 220

    Abstract: BFR18 bfx74a BFR16 BFW43 BFW44 BFX38 BFX39 BFX40 BFX41
    Text: 01 — - — — — — - 051? 051? 081? 081? 081? 03£ 0Z£ 081? 081? OOZ 003 005 009 90 OQL 09 L 99 99 99 — — — — 00 00 00 00 00 L 001 — 98 98 98 817 — 817 98 98 91 91 OZ OZ g n n L L L 9 9 91 10 01 8L 8L 91 91 91 9L 9 9 01 01 9ZL ZL 9'0 90


    OCR Scan     		PDF T0-18 BFR16 NPNTO-39 UOJ 220 BFR18 bfx74a BFW43 BFW44 BFX38 BFX39 BFX40 BFX41

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


    OCR Scan     		PDF

    Transistoren DDR

    Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
    Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60


    OCR Scan     		PDF SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369

    2sd 5023

    Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


    OCR Scan     		PDF -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945

    2sd 5023

    Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


    OCR Scan     		PDF 13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345

    TO-206A

    Abstract: BFY 83 BFY90T BFY 99 BFY90 MOTOROLA
    Text: • MOTOROLA SC CXSTRS/R F MbE D b3fci72S4 G O T m a a MOTOROLA 4 ■MOTb T ■ SEMICONDUCTOR BFX89 BFY90 TECHNICAL DATA T h e R F L ine fT = 2 .0 G H z @ 1 0 m A HIG H FREQUENCY T R A N SISTO R S NPN SILICON HIGH-FREQUENCY TRANSISTORS N P N S IL IC O N . . . d e s ig n e d for V H F a n d U H F a p p lic a t io n s w h e r e h ig h -g a in , lo w *


    OCR Scan     		PDF b3fci72S4 BFX89 BFY90 TO-206A BFY 83 BFY90T BFY 99 BFY90 MOTOROLA

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


    OCR Scan     		PDF

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


    OCR Scan     		PDF