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SGS Semiconductor Ltd BFY56A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	BFY56A		130			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ComSIT USA	BFY56A		3,730			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Solid State Devices Inc (SSDI) BFY52
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	BFY52		40			1 - 10 - 100 - 1000 - 10000 -	Get Quote
YAGEO Corporation BFY50 1000 MA, 35 V, NPN, SI, SMALL SIGNAL TRANSISTOR, TO-39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	BFY50		20			1 $1.5 10 $1.35 100 $1.275 1000 $1.275 10000 $1.275	Buy Now
Housing and Safety Executive (HSE) BFY50 1000 MA, 35 V, NPN, SI, SMALL SIGNAL TRANSISTOR, TO-39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	BFY50		20			1 $3.75 10 $2.75 100 $2.75 1000 $2.75 10000 $2.75	Buy Now
Continental Device India Ltd BFY51 Transistor: NPN; bipolar; 30V; 1A; 0.8/5W; TO39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	BFY51		1,946		1	1 $0.885 10 $0.62 100 $0.335 1000 $0.296 10000 $0.296	Buy Now

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BFY5 Datasheets (274)

Part	Manufacturer	Description	Datasheet Type	PDF
BFY50	Central Semiconductor	Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8	Original	PDF
BFY50	Philips Semiconductors	Small-signal Transistors	Original	PDF
BFY50	Philips Semiconductors	NPN medium power transistors - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8	Original	PDF
BFY50	Semelab	Medium Power Amplifiers NPN Silicon Planar Transistor - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8	Original	PDF
BFY50	STMicroelectronics	MEDIUM POWER AMPLIFIER	Original	PDF
BFY50	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
BFY50	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF
BFY50	Diode Transistor	SMALL SIGNAL TRANSISTORS	Scan	PDF
BFY50	Fairchild Semiconductor	Misc. Data Book Scans 1975/76	Scan	PDF
BFY50	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
BFY50	Ferranti Semiconductors	Metal Can Transistors (Short Form)	Scan	PDF
BFY50	Ferranti Semiconductors	Shortform Data Book 1971	Short Form	PDF
BFY50	Ferranti Semiconductors	Quick Reference Guide 1985	Scan	PDF
BFY50	ITT Semiconductors	Semiconductor Summary 1969	Scan	PDF

BFY50	Micro Electronics	Semiconductor Device Data Book	Scan	PDF
BFY50	Micro Electronics	Semiconductor Devices	Scan	PDF
BFY50	Motorola	Motorola Transistor Datasheets	Scan	PDF
BFY50	Motorola	The European Selection Data Book 1976	Scan	PDF
BFY50	Motorola	European Master Selection Guide 1986	Scan	PDF
BFY50	Mullard	Quick Reference Guide 1977/78	Scan	PDF

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BFY5 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BFY56B Abstract: No abstract text available Text: BFY56B Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 55V 0.41 (0.016) 0.53 (0.021)	Original	BFY56B O205AD) 1-Aug-02 BFY56B	PDF
BFY51 Abstract: transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 BFY50 equivalent BP317 ic 709 BFY51 philips Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN medium power transistors	Original	M3D111 BFY50; BFY51; BFY52 MAM317 SCA54 117047/00/02/pp8 BFY51 transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 BFY50 equivalent BP317 ic 709 BFY51 philips	PDF
BFY50L Abstract: No abstract text available Text: BFY50L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.	Original	BFY50L O205AA) 20-Aug-02 BFY50L	PDF
BFY52 Abstract: BFY51 BFY50 BFY50-BFY51 BFY50I Text: BFY50-BFY51 BFY52 MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM	Original	BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50 BFY51 BFY50 BFY50-BFY51 BFY50I	PDF
Untitled Abstract: No abstract text available Text: BFY52 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 20V 0.41 (0.016) 0.53 (0.021)	Original	BFY52 O205AD) 17-Jul-02	PDF
transistor BFY52 Abstract: transistor 5w Text: SILICON NPN TRANSISTOR BFY52 • V BR CEO = 20V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO	Original	BFY52 O-205AD) transistor BFY52 transistor 5w	PDF
Untitled Abstract: No abstract text available Text: BFY52 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 20V 0.41 (0.016) 0.53 (0.021)	Original	BFY52 O205AD) 19-Jun-02	PDF
BFY50 Abstract: No abstract text available Text: BFY50 MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Description 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they	Original	BFY50 BFY50 Ts180 150mA 300ms,	PDF
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION	Original	BFY50, BFY51, BFY52 BFY50 BFY51 C-120 52Rev210701	PDF
Untitled Abstract: No abstract text available Text: BFY56B Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 55V 0.41 (0.016) 0.53 (0.021)	Original	BFY56B O205AD) 19-Jun-02	PDF
BFY51 Abstract: No abstract text available Text: SILICON NPN TRANSISTOR BFY51 • V BR CEO = 30V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO	Original	BFY51 O-205AD) BFY51	PDF
Untitled Abstract: No abstract text available Text: BFY51 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)	Original	BFY51 O205AD) 19-Jun-02	PDF
BFY50 Abstract: No abstract text available Text: BFY50 MECHANICAL DATA Dimensions in mm inches MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. Description The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they	Original	BFY50 BFY50 O-205AD) BFY50" BFY50L 60MHz	PDF
Untitled Abstract: No abstract text available Text: BFY51 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)	Original	BFY51 O205AD) 17-Jul-02	PDF

BFY55 Abstract: discrete 4-20ma Silicon Epitaxial Planar Transistor philips Text: I I N AUER P H I L I P S / D I S C R E T E bTE b b S B ^ a i j D QDETflDT 737 I IAPX BFY55 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N tran sisto r in T O -39 m etal case w ith th e c o lle c to r connected to th e case. I t is p rim a rily intended fo r use in high freq u e n cy and ve ry high fre q u e n cy oscillators and a m p lifiers as w e ll as f o r o u tp u t stages	OCR Scan	BFY55 53cl31 002762Q BFY55 discrete 4-20ma Silicon Epitaxial Planar Transistor philips	PDF
BC337B Abstract: m 60 n 03 g10 BC327C Text: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA	OCR Scan	ZTX653 ZTX453 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 BC337B m 60 n 03 g10 BC327C	PDF
BFY52 Abstract: bfy50 BFY51 BFY50-BFY51 BFY51 philips Text: Philips Semiconductors Product specification NPN medium power transistors BFY50; BFY51 ; BFY52 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 35 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector, connected to case • General purpose industrial applications.	OCR Scan	BFY50; BFY51 BFY52 BFY50 BFY51 BFY52 BFY50-BFY51 BFY51 philips	PDF
BFY50-BFY51 Abstract: No abstract text available Text: /IT ^7# S C S -IH O M S O N RjincœiiLiCTœffiines BFY50-BFY51 BFY52 M EDIUM -PO W ER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications.	OCR Scan	BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50	PDF
bfy50 Abstract: FY51 Text: M O TO R OL A SC X S T R S /R F 12E D I b3b72S4 aGöbMäS B \| BFYSO thru BFY52 M A X IM U M RATINGS R atin g S ym b o l BFY BFY BFY . 50 81 52 U n it C ollector-E m itter Voltage VcEO 35 30 20 Vdc C ollector-Base Voltage VCBO 80 60 40 Vdc E m itter-Base Voltage	OCR Scan	b3b72S4 BFY52 b3b75S4 BFY50 37-rt FY51-52 FY51	PDF
BFY55 Abstract: transistor f 421 1F t transistor Silicon Epitaxial Planar Transistor philips Text: BFY55 PHILIPS INTERNATIONAL SbE D Bi 711üflSb 00422^2 043 I IPHIN T -3 h 2 3 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-39 metal case with the collector connected to the case. It is primarily intended for use in high frequency and very high frequency oscillators and amplifiers as well as for output stages	OCR Scan	BFY55 7110fl5b T-3J-23 T-31-23 711DaSb 0DM53GB BFY55 transistor f 421 1F t transistor Silicon Epitaxial Planar Transistor philips	PDF
Untitled Abstract: No abstract text available Text: 30E d • Goaiaas ? ■ SCS-THOMSON HkHOT «! ^ 1 A -Z 3 > BFY50-B FY51 BFY52 S G S-THOMSON MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear	OCR Scan	BFY50-B BFY52 BFY50, BFY51 BFY52 BFY50 BFY51	PDF
BF177 Abstract: BC312 BF178 BF179 2N4260 BC142 2N3576 BFT39 2N3829 BF338 Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20	OCR Scan	BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 BF177 BC312 BF178 BF179 2N4260 BC142 2N3576 2N3829 BF338	PDF
2N4260 Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50 Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20	OCR Scan	BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 2N4260 2N3829	PDF
Transistor BC177 Abstract: 2N3053 ZT87 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 Max VcE sat at V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c 500 1.5 150 500 1.5 150 1000 0.35 150 Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 15 Continued Min f T at at Pto,	OCR Scan	2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 ZT87 2N1131 2N1132 2N4037 BC177	PDF

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BFY5 Search Results

BFY5 Price and Stock

SGS Semiconductor Ltd BFY56A

Solid State Devices Inc (SSDI) BFY52

YAGEO Corporation BFY50

Housing and Safety Executive (HSE) BFY50

Continental Device India Ltd BFY51

BFY5 Datasheets (274)

BFY5 Datasheets Context Search

BFY56B

BFY51

BFY50L

BFY52

Untitled

transistor BFY52

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BFY50

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Untitled

BFY51

Untitled

BFY50

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BFY55

BC337B

BFY52

BFY50-BFY51

bfy50

BFY55

Untitled

BF177

2N4260

Transistor BC177