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YAGEO Corporation BFY50 1000 MA, 35 V, NPN, SI, SMALL SIGNAL TRANSISTOR, TO-39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	BFY50		20			1 $1.5 10 $1.35 100 $1.275 1000 $1.275 10000 $1.275	Buy Now
Housing and Safety Executive (HSE) BFY50 1000 MA, 35 V, NPN, SI, SMALL SIGNAL TRANSISTOR, TO-39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	BFY50		20			1 $3.75 10 $2.75 100 $2.75 1000 $2.75 10000 $2.75	Buy Now
Continental Device India Ltd BFY50 Transistor: NPN; bipolar; 35V; 1A; 0.8/5W; TO39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	BFY50		1,900		1	1 $1.15 10 $0.807 100 $0.435 1000 $0.384 10000 $0.384	Buy Now
SGS Semiconductor Ltd BFY50 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BFY50		54			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Texas Instruments BFY50 NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	BFY50		296			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BFY50 Datasheets (62)

Part	Manufacturer	Description	Datasheet Type	PDF
BFY50	Central Semiconductor	Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8	Original	PDF
BFY50	Philips Semiconductors	Small-signal Transistors	Original	PDF
BFY50	Philips Semiconductors	NPN medium power transistors - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8	Original	PDF
BFY50	Semelab	Medium Power Amplifiers NPN Silicon Planar Transistor - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8	Original	PDF
BFY50	STMicroelectronics	MEDIUM POWER AMPLIFIER	Original	PDF
BFY50	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
BFY50	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF
BFY50	Diode Transistor	SMALL SIGNAL TRANSISTORS	Scan	PDF
BFY50	Fairchild Semiconductor	Misc. Data Book Scans 1975/76	Scan	PDF
BFY50	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
BFY50	Ferranti Semiconductors	Metal Can Transistors (Short Form)	Scan	PDF
BFY50	Ferranti Semiconductors	Shortform Data Book 1971	Short Form	PDF
BFY50	Ferranti Semiconductors	Quick Reference Guide 1985	Scan	PDF
BFY50	ITT Semiconductors	Semiconductor Summary 1969	Scan	PDF

BFY50	Micro Electronics	Semiconductor Device Data Book	Scan	PDF
BFY50	Micro Electronics	Semiconductor Devices	Scan	PDF
BFY50	Motorola	Motorola Transistor Datasheets	Scan	PDF
BFY50	Motorola	The European Selection Data Book 1976	Scan	PDF
BFY50	Motorola	European Master Selection Guide 1986	Scan	PDF
BFY50	Mullard	Quick Reference Guide 1977/78	Scan	PDF

BFY50 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BFY51 Abstract: transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 BFY50 equivalent BP317 ic 709 BFY51 philips Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN medium power transistors	Original	M3D111 BFY50; BFY51; BFY52 MAM317 SCA54 117047/00/02/pp8 BFY51 transistor BFY52 BFY50 ic str 6707 BFY52 IC 7811 BFY50 equivalent BP317 ic 709 BFY51 philips	PDF
BFY50L Abstract: No abstract text available Text: BFY50L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.	Original	BFY50L O205AA) 20-Aug-02 BFY50L	PDF
BFY52 Abstract: BFY51 BFY50 BFY50-BFY51 BFY50I Text: BFY50-BFY51 BFY52 MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM	Original	BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50 BFY51 BFY50 BFY50-BFY51 BFY50I	PDF
BFY50 Abstract: No abstract text available Text: BFY50 MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Description 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they	Original	BFY50 BFY50 Ts180 150mA 300ms,	PDF
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION	Original	BFY50, BFY51, BFY52 BFY50 BFY51 C-120 52Rev210701	PDF
BFY50 Abstract: No abstract text available Text: BFY50 MECHANICAL DATA Dimensions in mm inches MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. Description The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they	Original	BFY50 BFY50 O-205AD) BFY50" BFY50L 60MHz	PDF
BFY51 Abstract: BFY50 BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION	Original	BFY50, BFY51, BFY52 BFY50 BFY51 C-120 52Rev210701 BFY51 BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52	PDF
BFY50 Abstract: BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52 BFY51I bfy50 cb Text: BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS	Original	BFY50/51 BFY50 BFY52 BFY50 BFY51 BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY51I bfy50 cb	PDF
BFY50 Abstract: tc 3085 Text: BFY50 MECHANICAL DATA Dimensions in mm inches MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. Description The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they	Original	BFY50 BFY50 O-205AD) 150mA tc 3085	PDF
Untitled Abstract: No abstract text available Text: BFY50 MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Description 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they	Original	BFY50 BFY50 150mA 300ms,	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN TRANSISTOR BFY50 • V BR CEO = 35V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO	Original	BFY50 57mW/Â O-205AD)	PDF
BFY50 Abstract: BFY51 BFY50-BFY51 BFY 52 transistor Text: BFY 50 BFY 51 BFY 52 SILICON PLANAR NPN M E D IU M -P O W E R A M P L IF IE R S The BFY50, BFY51 and E1FY52 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are intended fo r general purpose linear and switching applications.	OCR Scan	BFY50, BFY51 EIFY52 70x1CT6 130x1er6 150mA BFY50 BFY50-BFY51 BFY 52 transistor	PDF
BC337B Abstract: m 60 n 03 g10 BC327C Text: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA	OCR Scan	ZTX653 ZTX453 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 BC337B m 60 n 03 g10 BC327C	PDF
BFY52 Abstract: bfy50 BFY51 BFY50-BFY51 BFY51 philips Text: Philips Semiconductors Product specification NPN medium power transistors BFY50; BFY51 ; BFY52 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 35 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector, connected to case • General purpose industrial applications.	OCR Scan	BFY50; BFY51 BFY52 BFY50 BFY51 BFY52 BFY50-BFY51 BFY51 philips	PDF

Untitled Abstract: No abstract text available Text: 30E d • Goaiaas ? ■ SCS-THOMSON HkHOT «! ^ 1 A -Z 3 > BFY50-B FY51 BFY52 S G S-THOMSON MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear	OCR Scan	BFY50-B BFY52 BFY50, BFY51 BFY52 BFY50 BFY51	PDF
BF177 Abstract: BC312 BF178 BF179 2N4260 BC142 2N3576 BFT39 2N3829 BF338 Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20	OCR Scan	BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 BF177 BC312 BF178 BF179 2N4260 BC142 2N3576 2N3829 BF338	PDF
2N4260 Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50 Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20	OCR Scan	BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 2N4260 2N3829	PDF
Bfy51 Abstract: No abstract text available Text: bTE T> m bbS3T31 DDSTTTD A3D H A P X 11 N AMER PHILIPS/DISCRETE II BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for general purpose industrial applications. QUICK REFERENCE DATA BFY50 Collector-base voltage open emitter	OCR Scan	bbS3T31 BFY50 BFY51 BFY52 Bfy51	PDF
BFY51 Abstract: BFY50 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BS944 BFY501 BFY52 J100 Text: II b^E J> m bbSB^l □ □2 7 7 ‘iD fl3D IAPX A N AMER PHILIPS/DISCRETE BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO -39 m etal envelopes intended fo r general purpose in d u stria l applications. Q U IC K R E F E R E N C E D A T A	OCR Scan	D277TD BFY50 BFY51 BFY52 bfy50 BFY51 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BS944 BFY501 BFY52 J100	PDF
BC142 equivalent Abstract: BC302 equivalent BF337 2N3440 8c BF259 2N3440 COMPLEMENTARY 2N3829 bf258 equivalent 2N4260 BFT39 Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20	OCR Scan	BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 BC142 equivalent BC302 equivalent BF337 2N3440 8c BF259 2N3440 COMPLEMENTARY 2N3829 bf258 equivalent 2N4260	PDF
BFY51 Abstract: BFY50 Text: BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal packages intended for general purpose industrial applications. Q U IC K R E F E R E N C E D A T A BFY50 Collector-base voltage open em itter Collector-em itter voltage (open base)	OCR Scan	BFY50 BFY51 BFY52 BFY52	PDF
BC337B Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50 Text: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A	OCR Scan	ZTX653 ZTX453 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 MPSA05 ZTX650 BC337B BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751	PDF
Untitled Abstract: No abstract text available Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. INTERNAL SCHEMATIC DIAGRAM	OCR Scan	BFY50/51 BFY50 BFY52 BFY50 BFY51 BFY50/BFY51 P008B	PDF
2N222A Abstract: N2222 zs90 2N222 BFS61 ZS150 2n3600 BFS59 2N222-A BFX84 Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n Maximum Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A BFS59 BFS60 BFS61 BFX84 BFX8S BFY50 BFY51 BFY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT86 ZT87 ZT88 ZT89 ZT90 ZT91 ZT92	OCR Scan	BFS59 BFS60 BFS61 BFS96-98 BFX84 KS77B KS78B 2N222A N2222 zs90 2N222 ZS150 2n3600 2N222-A	PDF

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BFY50 Search Results

BFY50 Price and Stock

YAGEO Corporation BFY50

Housing and Safety Executive (HSE) BFY50

Continental Device India Ltd BFY50

SGS Semiconductor Ltd BFY50

Texas Instruments BFY50

BFY50 Datasheets (62)

BFY50 Datasheets Context Search

BFY51

BFY50L

BFY52

BFY50

Untitled

BFY50

BFY51

BFY50

BFY50

Untitled

Untitled

BFY50

BC337B

BFY52

Untitled

BF177

2N4260

Bfy51

BFY51

BC142 equivalent

BFY51

BC337B

Untitled

2N222A