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    Untitled

    Abstract: No abstract text available
    Text: BFY50 MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Description 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they


    Original     		PDF BFY50 BFY50 150mA 300ms,

    BFY50

    Abstract: No abstract text available
    Text: BFY50 MECHANICAL DATA Dimensions in mm inches MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. Description The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they


    Original     		PDF BFY50 BFY50 O-205AD) BFY50" BFY50L 60MHz

    BFY50

    Abstract: BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52 BFY51I bfy50 cb
    Text: BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BFY50/51 BFY50 BFY52 BFY50 BFY51 BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY51I bfy50 cb

    BFY52

    Abstract: BFY51 BFY50 BFY50-BFY51 BFY50I
    Text: BFY50-BFY51 BFY52 MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50 BFY51 BFY50 BFY50-BFY51 BFY50I

    BFY50

    Abstract: tc 3085
    Text: BFY50 MECHANICAL DATA Dimensions in mm inches MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. Description The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they


    Original     		PDF BFY50 BFY50 O-205AD) 150mA tc 3085

    BFY50

    Abstract: No abstract text available
    Text: BFY50 MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Description 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they


    Original     		PDF BFY50 BFY50 Ts180 150mA 300ms,

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BFY50 • V BR CEO = 35V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO


    Original     		PDF BFY50 57mW/Â O-205AD)

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BFY50 • V BR CEO = 35V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO


    Original     		PDF BFY50 O-205AD)

    BFY51

    Abstract: BFY50
    Text: BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal packages intended for general purpose industrial applications. Q U IC K R E F E R E N C E D A T A BFY50 Collector-base voltage open em itter Collector-em itter voltage (open base)


    OCR Scan     		PDF BFY50 BFY51 BFY52 BFY52

    Untitled

    Abstract: No abstract text available
    Text: 30E d • Goaiaas ? ■ SCS-THOMSON HkHOT «! ^ 1 A -Z 3 > BFY50-B FY51 BFY52 S G S-THOMSON MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear


    OCR Scan     		PDF BFY50-B BFY52 BFY50, BFY51 BFY52 BFY50 BFY51

    Bfy51

    Abstract: No abstract text available
    Text: bTE T> m bbS3T31 DDSTTTD A3D H A P X 11 N AMER PHILIPS/DISCRETE II BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for general purpose industrial applications. QUICK REFERENCE DATA BFY50 Collector-base voltage open emitter


    OCR Scan     		PDF bbS3T31 BFY50 BFY51 BFY52 Bfy51

    Untitled

    Abstract: No abstract text available
    Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. INTERNAL SCHEMATIC DIAGRAM


    OCR Scan     		PDF BFY50/51 BFY50 BFY52 BFY50 BFY51 BFY50/BFY51 P008B

    BFY50-BFY51

    Abstract: No abstract text available
    Text: /IT ^7# S C S -IH O M S O N RjincœiiLiCTœffiines BFY50-BFY51 BFY52 M EDIUM -PO W ER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications.


    OCR Scan     		PDF BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50

    BC142 equivalent

    Abstract: BC302 equivalent BF337 2N3440 8c BF259 2N3440 COMPLEMENTARY 2N3829 bf258 equivalent 2N4260 BFT39
    Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20


    OCR Scan     		PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 BC142 equivalent BC302 equivalent BF337 2N3440 8c BF259 2N3440 COMPLEMENTARY 2N3829 bf258 equivalent 2N4260

    BC337B

    Abstract: m 60 n 03 g10 BC327C
    Text: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA


    OCR Scan     		PDF ZTX653 ZTX453 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 BC337B m 60 n 03 g10 BC327C

    BF177

    Abstract: BC312 BF178 BF179 2N4260 BC142 2N3576 BFT39 2N3829 BF338
    Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20


    OCR Scan     		PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 BF177 BC312 BF178 BF179 2N4260 BC142 2N3576 2N3829 BF338

    2N222A

    Abstract: N2222 zs90 2N222 BFS61 ZS150 2n3600 BFS59 2N222-A BFX84
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n Maximum Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A BFS59 BFS60 BFS61 BFX84 BFX8S BFY50 BFY51 BFY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT86 ZT87 ZT88 ZT89 ZT90 ZT91 ZT92


    OCR Scan     		PDF BFS59 BFS60 BFS61 BFS96-98 BFX84 KS77B KS78B 2N222A N2222 zs90 2N222 ZS150 2n3600 2N222-A

    2N4260

    Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
    Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20


    OCR Scan     		PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 2N4260 2N3829

    BC337B

    Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50
    Text: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A


    OCR Scan     		PDF ZTX653 ZTX453 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 MPSA05 ZTX650 BC337B BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751

    Untitled

    Abstract: No abstract text available
    Text: SbE V m T T 7 GS 7 Ô 0 Q0 7 D S 0 T23 H Z E T B T - '¿ / l- O i SEM ICO N D U CTOR DICE NPN MEDIUM POWER V CBO V CEO hFE at •CBO Min. Min. Max. at V CB Dice type Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711


    OCR Scan     		PDF ZTX653 ZTX453 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613

    BFY50

    Abstract: BFY51 BFY50-BFY51 BFY 52 transistor
    Text: BFY 50 BFY 51 BFY 52 SILICON PLANAR NPN M E D IU M -P O W E R A M P L IF IE R S The BFY50, BFY51 and E1FY52 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are intended fo r general purpose linear and switching applications.


    OCR Scan     		PDF BFY50, BFY51 EIFY52 70x1CT6 130x1er6 150mA BFY50 BFY50-BFY51 BFY 52 transistor

    BFY51

    Abstract: BFY50 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BS944 BFY501 BFY52 J100
    Text: II b^E J> m bbSB^l □ □2 7 7 ‘iD fl3D IAPX A N AMER PHILIPS/DISCRETE BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO -39 m etal envelopes intended fo r general purpose in d u stria l applications. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF D277TD BFY50 BFY51 BFY52 bfy50 BFY51 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BS944 BFY501 BFY52 J100

    bfy50

    Abstract: FY51
    Text: M O TO R OL A SC X S T R S /R F 12E D I b3b72S4 aGöbMäS B | BFYSO thru BFY52 M A X IM U M RATINGS R atin g S ym b o l BFY BFY BFY . 50 81 52 U n it C ollector-E m itter Voltage VcEO 35 30 20 Vdc C ollector-Base Voltage VCBO 80 60 40 Vdc E m itter-Base Voltage


    OCR Scan     		PDF b3b72S4 BFY52 b3b75S4 BFY50 37-rt FY51-52 FY51

    C736

    Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


    OCR Scan     		PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C736 C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633