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    BG 22 TRANSISTOR Search Results

    BG 22 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BG 22 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAF3602

    Abstract: nxp saturn V1043 SAF3601EL/V3040 SAF3602EL/V3040C518 V10-40
    Text: SAF360X LF BG A2 23 Digital radio and processing system-on-chip Rev. 2 — 22 August 2014 Product short data sheet 1. General description The SAF360X is a monolithic integrated digital terrestrial radio processor. The SAF360X family includes different chip variants—SAF3600, SAF3601, SAF3602, SAF3604,


    Original     		PDF SAF360X SAF360X SAF3600, SAF3601, SAF3602, SAF3604, SAF3606, SAF3607. SAF3602 nxp saturn V1043 SAF3601EL/V3040 SAF3602EL/V3040C518 V10-40

    M38UC

    Abstract: Stellex M38UC SM4T mixer M38UC-150 a56 transistor 952 STELLEX SFD25 M38DC-400 transistor MY51 transistor MY52 M38UC-400
    Text: M/A-COM, Inc. 1011 Pawtucket Blvd. Lowell, MA 01853-3295 RF and Microwave Products North America MSBU Component Operations Tel: 800.366.2266 Fax: 800.618.8883 Europe/Africa/Middle East Tel: 44.1344.869.595 Fax: 44.1344.300.020 Asia/Pacific Tel: 81.44.844.8296


    Original     		PDF MA-C-05010007 M38UC Stellex M38UC SM4T mixer M38UC-150 a56 transistor 952 STELLEX SFD25 M38DC-400 transistor MY51 transistor MY52 M38UC-400

    48V to 12V buck boost converter

    Abstract: WSL2512R0250FEA LTC3780EG 100ME100HC 48V DC to 12v dc converter circuit diagram 40 amp CDEP147NP-100MC-125 LTC3722-2 LTC3780 pc power suplly p channel mosfet 100v
    Text: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES DESCRIPTION • The LTC 4444 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. The powerful driver capability reduces switching losses in


    Original     		PDF LTC4444 LTC4444 LTC4440/ LTC4440-5 LTC4441 LTC4442/LTC4442-1 4444f 48V to 12V buck boost converter WSL2512R0250FEA LTC3780EG 100ME100HC 48V DC to 12v dc converter circuit diagram 40 amp CDEP147NP-100MC-125 LTC3722-2 LTC3780 pc power suplly p channel mosfet 100v

    LTC4444-5

    Abstract: LTC4444HMS8E LTC4444MPMS8E LTC4446 8H,D3 4444 diode bg 8pin msop package LTC4440-5 LTC1154
    Text: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES DESCRIPTION n The LTC 4444 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with


    Original     		PDF LTC4444 LTC4449 LTC4441/LTC4441-1 LTC1154 4444fb LTC4444-5 LTC4444HMS8E LTC4444MPMS8E LTC4446 8H,D3 4444 diode bg 8pin msop package LTC4440-5 LTC1154

    LTC4440-5

    Abstract: LTC1154
    Text: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n n n DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 7.2V to 13.5V Adaptive Shoot-Through Protection 2.5A Peak TG Pull-Up Current 3A Peak BG Pull-Up Current


    Original     		PDF LTC4444 LTC4444 LTC4449 LTC4441/LTC4441-1 LTC1154 4444fb LTC4440-5 LTC1154

    LTC4444-5

    Abstract: LTC4444MP LTC4444MPMS8E LTC4446 4444 diode LTC4440-5 LTC1154
    Text: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver Features n n n n n n n n n n n n n n Description Bootstrap Supply Voltage to 114V Wide VCC Voltage: 7.2V to 13.5V Adaptive Shoot-Through Protection 2.5A Peak TG Pull-Up Current 3A Peak BG Pull-Up Current


    Original     		PDF LTC4444 LTC4444 LTC4449 LTC4441/LTC4441-1 LTC1154 4444fa LTC4444-5 LTC4444MP LTC4444MPMS8E LTC4446 4444 diode LTC4440-5 LTC1154

    BLF861

    Abstract: UT70 rogers 5880 821 ceramic capacitor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D392 BLF861 OT540A budgetnum/printrun/ed/pp12 BLF861 UT70 rogers 5880 821 ceramic capacitor

    LTC4442

    Abstract: LTC4440-5
    Text: LTC4446 High Voltage High Side/ Low Side N-Channel MOSFET Driver DESCRIPTION FEATURES n n n n n n n n n n n n n Bootstrap Supply Voltage Up to 114V Wide VCC Voltage: 7.2V to 13.5V 2.5A Peak Top Gate Pull-Up Current 3A Peak Bottom Gate Pull-Up Current 1.2Ω Top Gate Driver Pull-Down


    Original     		PDF LTC4446 LTC4446 4446f LTC4442 LTC4440-5

    MOSFET 4446

    Abstract: switching regulator 12v 3A 660 tg diode LTC4440-5 100v boost ic 4446 36V high power cmos driver LTC3722-2 LTC3785 15v 5a dc boost
    Text: LTC4446 High Voltage High Side/ Low Side N-Channel MOSFET Driver DESCRIPTION FEATURES n n n n n n n n n n n n n Bootstrap Supply Voltage Up to 114V Wide VCC Voltage: 7.2V to 13.5V 2.5A Peak Top Gate Pull-Up Current 3A Peak Bottom Gate Pull-Up Current 1.2Ω Top Gate Driver Pull-Down


    Original     		PDF LTC4446 LTC4446 lev00V 4446f MOSFET 4446 switching regulator 12v 3A 660 tg diode LTC4440-5 100v boost ic 4446 36V high power cmos driver LTC3722-2 LTC3785 15v 5a dc boost

    LTC4440-5

    Abstract: LTC1154
    Text: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n n n DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 4.5V to 13.5V Adaptive Shoot-Through Protection 1.4A Peak Top Gate Pull-Up Current 1.75A Peak Bottom Gate Pull-Up Current


    Original     		PDF LTC4444-5 LTC4444-5 LTC4449 LTC4441/LTC4441-1 LTC1154 44445fc LTC4440-5 LTC1154

    Dual Full-Bridge MOSFET Driver

    Abstract: 48V to 12V buck boost converter LTC4444-5 LTC4444-5EMS8E LTC3780 LTC4444-5E LTC4444-5I LTC4444-5IMS8E LTC4446 LTC3901
    Text: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 4.5V to 13.5V Adaptive Shoot-Through Protection 1.4A Peak Top Gate Pull-Up Current


    Original     		PDF LTC4444-5 LTC4444-5 44445f Dual Full-Bridge MOSFET Driver 48V to 12V buck boost converter LTC4444-5EMS8E LTC3780 LTC4444-5E LTC4444-5I LTC4444-5IMS8E LTC4446 LTC3901

    Untitled

    Abstract: No abstract text available
    Text: 7294621 POWEREX INC Dim A B C D E F G H I J K L M N O P Q bg Inches 3.62*.02 3.15 .24 .22 1.38 ±.02 .28 .83 .709 .335 1.02 .394 .807 .531 .472 1.181 .758 .118 1 F| 7ET4t,21 PDDDTBfi S |~_D f T-33-2 Metric 92 ±0.4 80 6 5.5 35 ±.4 7 21 18 8.5 26 10 20.5 13.5


    OCR Scan     		PDF T-33-2 KB72450210 KB72450 KB72450210

    BGY36

    Abstract: BGY33 BGY32 BGY35 77209 vHF amplifier module
    Text: BGY32 BGY35 BGY33 BGY36 VHF POWER AMPLIFIER MODULES A range of broadband am plifier modules designed for mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices w ill produce 18 W output into a 50 f i load. The modules consist of a tw o stage RF amplifier using npn transistor chips, together w ith lumpedelement matching components.


    OCR Scan     		PDF BGY32 BGY33 BGY35 BGY36 BGY33 7110A2b BGY36 77209 vHF amplifier module

    Philips BGY36 VHF Power amplifier Module

    Abstract: BGY36 BGY33 Philips bgy32 BGY35 BGV33 BGY32 12p capacitor VB212
    Text: BGY32 BGY35 BGY33 BGY36 VHF POWER AMPLIFIER MODULES A range of broadband amplifier modules designed for mobile communications equipments, operating directly from 12 V vehicle electrical systems. The deviceswill produce 18 W output into a 50 Î2 load. The modules consist of a two stage RF amplifier using npn transistor chips, together with lumpedelement matching components.


    OCR Scan     		PDF BGY32 BGY33 BGY35 BGY36 7110fl2b BGY36 Philips BGY36 VHF Power amplifier Module Philips bgy32 BGV33 12p capacitor VB212

    5V VSG MOSFET

    Abstract: high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK203-50X OT263 T0220 5V VSG MOSFET high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch

    K203

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK203-50Y BUK203-50Y K203

    PowerMOS transistor TOPFET high side switch

    Abstract: BUK203-50Y
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK203-50Y BUK203-50Y OT263 T0220 PowerMOS transistor TOPFET high side switch

    PowerMOS transistor TOPFET high side switch

    Abstract: 100-P BUK200-50X
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK200-50X OT263 T0220 PowerMOS transistor TOPFET high side switch 100-P BUK200-50X

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK203-50X BUK203-5QX BUK203-50X

    BU 103 A transistor

    Abstract: transistor BG 23 0/transistor BG 23
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK200-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK200-50Y BU 103 A transistor transistor BG 23 0/transistor BG 23

    BUK202-50X

    Abstract: PowerMOS transistor TOPFET high side switch BUK202
    Text: Product specification Philips Semiconductors PowerMOS transistor BUK202-50X TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK202-50X OT263 T0220 BUK202-50X PowerMOS transistor TOPFET high side switch BUK202

    pfe 225

    Abstract: K203 EUK203-50X
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK203-50X BUK203-50X pfe 225 K203 EUK203-50X

    Transistor Vb

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK202-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK202-50Y Transistor Vb

    buk201

    Abstract: PowerMOS transistor TOPFET high side switch BUK201-50X
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK201-50X OT263 T0220 buk201 PowerMOS transistor TOPFET high side switch BUK201-50X