BG3123R |
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Infineon Technologies
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DUAL N-Channel MOSFET Tetrode |
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BG3123R |
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Infineon Technologies
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Dual Semi Biased; Package: PG-SOT363-6; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 30.0 mS; Gp (typ): 25.0 dB; F (typ): 1.3 dB; |
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BG3123RE6327 |
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Infineon Technologies
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V SOT-363 |
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BG3123RE6327 |
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Infineon Technologies
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Transistor Mosfet N-CH 240V 0.29A 4SOT-89 T/R |
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BG3123RE6327HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V SOT-363 |
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BG3123RH6327 |
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Infineon Technologies
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V 25MA SOT363 |
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Original |
PDF
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BG3123RH6327XTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V 25MA SOT363 |
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Original |
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