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    BGA 180 PACKAGE Search Results

    BGA 180 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    BGA 180 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1152 BGA tray

    Abstract: tray datasheet bga jedec bga tray tray bga 117-pin JEDEC tray standard JEDEC TRAY DIMENSIONS
    Text: TRAY CONTAINER 135° C MAX. A 10.5 12.80 10.35 FBGA14 x 10 ESP NEC 115.2 135.9 PPE 10 × 18=180 UNIT : mm A' 14.5 17.10 12.15 290.7 315.0 322.6 SECTION A-A' 14.50 (5.97) (5.62) 7.62 14.00 Applied Package 117-pin Plastic BGA (14×10) Quantity (pcs) 180 MAX.


    Original     		PDF FBGA14 117-pin FBGA14 SSD-A-H7531 1152 BGA tray tray datasheet bga jedec bga tray tray bga JEDEC tray standard JEDEC TRAY DIMENSIONS

    36AB-180

    Abstract: GS842Z18AB-180I GS842Z18A GS842Z36A
    Text: Preliminary GS842Z18/36AB-180/166/150/100 119-Bump BGA Commercial Temp Industrial Temp MHz 4Mb Pipelined and Flow Through 180 MHz–100 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 256K x 18 and 128K x 36 configurations


    Original     		PDF GS842Z18/36AB-180/166/150/100 119-Bump 842Z18A 36AB-180 GS842Z18AB-180I GS842Z18A GS842Z36A

    dp 104c

    Abstract: No abstract text available
    Text: GS842Z18/36AB-180/166/150/100 4Mb Pipelined and Flow Through Synchronous NBT SRAMs 119-Bump BGA Commercial Temp Industrial Temp Features 180 MHz–100 MHz 3.3 V VDD 2.5 V and 3.3 V VDDQ Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the


    Original     		PDF GS842Z18/36AB-180/166/150/100 119-Bump 842Z18A dp 104c

    B180

    Abstract: No abstract text available
    Text: GS841E18AT/B-180/166/150/130/100 180 MHz–100 MHz 3.3 V VDD 3.3 V and 2.5 V I/O 256K x 18 Sync Cache Tag TQFP, BGA Commercial Temp Industrial Temp Features • 3.3 V +10%/–5% core power supply, 2.5 V or 3.3 V I/O supply • Dual Cycle Deselect DCD • Intergrated data comparator for Tag RAM application


    Original     		PDF GS841E18AT/B-180/166/150/130/100 100-lead 119-BGA GS841E18A B180

    GS841E18A

    Abstract: GS841E18AT-180 256k x 18 119bga TS/103/02 B180
    Text: GS841E18AT/B-180/166/150/130/100 180 MHz–100 MHz 3.3 V VDD 3.3 V and 2.5 V I/O 256K x 18 Sync Cache Tag TQFP, BGA Commercial Temp Industrial Temp Features • 3.3 V +10%/–5% core power supply, 2.5 V or 3.3 V I/O supply • Dual Cycle Deselect DCD • Intergrated data comparator for Tag RAM application


    Original     		PDF GS841E18AT/B-180/166/150/130/100 GS841E18A GS841E18AT-180 256k x 18 119bga TS/103/02 B180

    B180

    Abstract: No abstract text available
    Text: GS841E18AT/B-180/166/150/130/100 TQFP, BGA Commercial Temp Industrial Temp 180 MHz–100 MHz 3.3 V VDD 3.3 V and 2.5 V I/O 256K x 18 Sync Cache Tag Features • 3.3 V +10%/–5% core power supply, 2.5 V or 3.3 V I/O supply • Dual Cycle Deselect DCD • Intergrated data comparator for Tag RAM application


    Original     		PDF GS841E18AT/B-180/166/150/130/100 seGS841E18A GS841E18A B180

    B180

    Abstract: GS841E18A GS841E18AT-180
    Text: GS841E18AT/B-180/166/150/130/100 180 MHz–100 MHz 3.3 V VDD 3.3 V and 2.5 V I/O 256K x 18 Sync Cache Tag TQFP, BGA Commercial Temp Industrial Temp Features • 3.3 V +10%/–5% core power supply, 2.5 V or 3.3 V I/O supply • Dual Cycle Deselect DCD • Intergrated data comparator for Tag RAM application


    Original     		PDF GS841E18AT/B-180/166/150/130/100 GS841E18A B180 GS841E18AT-180

    B180

    Abstract: No abstract text available
    Text: GS841E18AT/B-180/166/150/130/100 180 MHz–100 MHz 3.3 V VDD 3.3 V and 2.5 V I/O 256K x 18 Sync Cache Tag TQFP, BGA Commercial Temp Industrial Temp Features • 3.3 V +10%/–5% core power supply, 2.5 V or 3.3 V I/O supply • Dual Cycle Deselect DCD • Intergrated data comparator for Tag RAM application


    Original     		PDF GS841E18AT/B-180/166/150/130/100 100-lead 119-BGA GS841E18A B180

    Untitled

    Abstract: No abstract text available
    Text: GS76024AB BGA Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 256K x 24 6Mb Asynchronous SRAM Features 119-bump Ball Grid Array Package • Fast access time: 8, 10, 12 ns • CMOS low power operation: 260/210/180 mA at minimum cycle time


    Original     		PDF GS76024AB 119-bump 119-bump, GS76024A

    tray datasheet bga

    Abstract: tray bga
    Text: 180°C MAX NX BG1422 2.0 0712 8 REV.A A' 18.40 12.75 A 14.2 110.4 135.9 UNIT : mm 22.2 24.40 268.4 23.30 315.0 322.6 SECTION A – A' 5.52 (6.35) 7.62 22.2 Applied Package Quantity (pcs) 119-pin Plastic BGA (14x22) MAX. 84 Tray Material NX BG1422 2.0 Carbon PES


    Original     		PDF BG1422 119-pin tray datasheet bga tray bga

    GS76024AB-12

    Abstract: GS76024AB-8I 76024A
    Text: GS76024AB BGA Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 256K x 24 6Mb Asynchronous SRAM Features 119-bump Ball Grid Array Package • Fast access time: 8, 10, 12 ns • CMOS low power operation: 260/210/180 mA at minimum cycle time


    Original     		PDF GS76024AB 119-bump, 119-bump GS76024A GS76024AB-12 GS76024AB-8I 76024A

    GS76024A

    Abstract: GS76024AB
    Text: GS76024AB BGA Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 256K x 24 6Mb Asynchronous SRAM Features 119-bump Ball Grid Array Package • Fast access time: 8, 10, 12 ns • CMOS low power operation: 260/210/180 mA at minimum cycle time


    Original     		PDF GS76024AB 119-bump 119-bump, GS76024A TTLcompa/2005 GS76024AB

    tray datasheet bga

    Abstract: No abstract text available
    Text: UNIT : mm A' 29.26 180°C MAX TBGA 29 x 29 × 1.7mm 31.40 20.85 29.26 31.60 31.10 252.8 315.0 322.6 SECTION A – A' 29.26 5.82 7.62 6.35 135.9 94.2 A Applied Package 272-pin • Plastic BGA ( Quantity (pcs) 29) MAX. 36 Tray Material Heat Proof Temp. Surface resistance


    Original     		PDF 272-pin tray datasheet bga

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS840H18/32/36AT/B-200/180/166 TQFP, BGA Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs Features • FT pin for user configurable flow through or pipelined operation. • Single Cycle Deselect SCD Operation.


    Original     		PDF GS840H18/32/36AT/B-200/180/166 poH18/32/36A1 GS840H18/32/36A1 2000G 032/2000G; 840H18A

    GS840E18A

    Abstract: GS840E32A GS840E36A
    Text: Preliminary GS840E18/32/36AT/B-190/180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipelined operation • Dual Cycle Deselect DCD operation


    Original     		PDF GS840E18/32/36AT/B-190/180/166/150/100 840E18A GS840E18A GS840E32A GS840E36A

    GS840E18A

    Abstract: GS840E32A GS840E36A B180
    Text: Preliminary GS840E18/32/36AT/B-180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipelined operation • Dual Cycle Deselect DCD operation


    Original     		PDF GS840E18/32/36AT/B-180/166/150/100 100-lea 840E18A GS840E18A GS840E32A GS840E36A B180

    GS840E18A

    Abstract: GS840E32A GS840E36A
    Text: Preliminary GS840E18/32/36AT/B-200/180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipelined operation • Dual Cycle Deselect DCD operation


    Original     		PDF GS840E18/32/36AT/B-200/180/166/150/100 100table, 840E18A GS840E18A GS840E32A GS840E36A

    GS84018A

    Abstract: GS84018AT-190 GS84032A GS84036A
    Text: Preliminary GS84018/32/36AT/B-190/180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipelined operation • Single Cycle Deselect SCD operation


    Original     		PDF GS84018/32/36AT/B-190/180/166/150/100 10018A 84018A GS84018A GS84018AT-190 GS84032A GS84036A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS840H18/32/36AT/B-200/180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs Features • FT pin for user configurable flow through or pipeline operation • Single Cycle Deselect SCD Operation


    Original     		PDF GS840H18/32/36AT/B-200/180/166/150/100 Automatic32/36A1 2000G; 840H18A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS840E18/32/36AT/B-200/180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipelined operation • Dual Cycle Deselect DCD operation


    Original     		PDF GS840E18/32/36AT/B-200/180/166/150/100

    GS840H18A

    Abstract: GS840H32A GS840H36A
    Text: Preliminary GS840H18/32/36AT/B-200/180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs Features • FT pin for user configurable flow through or pipeline operation • Single Cycle Deselect SCD Operation


    Original     		PDF GS840H18/32/36AT/B-200/180/166/150/100 840H18A 840E18 GS840H18A GS840H32A GS840H36A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS88418/36B-200/180/166 512K x 18, 256K x 36 8Mb S/DCD Sync Burst SRAMs 119-Bump BGA Commercial Temp Industrial Temp Features LBO input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance.


    Original     		PDF GS88418/36B-200/180/166 119-Bump x18/x36 512Komply

    GS842Z18A

    Abstract: GS842Z36A
    Text: Preliminary GS842Z18/36AB-200/180/166/150/100 119-Bump BGA Commercial Temp Industrial Temp MHz 4Mb Pipelined and Flow Through 200 MHz–100 3.3 V VDD Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ Features Functional Description • 256K x 18 and 128K x 36 configurations


    Original     		PDF GS842Z18/36AB-200/180/166/150/100 119-Bump 842Z18A GS842Z18A GS842Z36A

    180I

    Abstract: GS842Z18A GS842Z18AB-166 GS842Z18AB-180 GS842Z36A
    Text: GS842Z18/36AB-180/166/150/100 119-Bump BGA Commercial Temp Industrial Temp 4Mb Pipelined and Flow Through Synchronous NBT SRAMs Features • 256K x 18 and 128K x 36 configurations • User configurable Pipeline and Flow Through mode • NBT No Bus Turn Around functionality allows zero wait


    Original     		PDF GS842Z18/36AB-180/166/150/100 119-Bump 842Z18A 180I GS842Z18A GS842Z18AB-166 GS842Z18AB-180 GS842Z36A