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    BGA60 Search Results

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    BGA60 Price and Stock

    Thomas & Betts BGA600-6-40

    6In Grnd Bush 6-4/0Wire Range Al |Abb Thomas & Betts BGA600-6-40
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BGA600-6-40 Bulk 1
    • 1 $321.86
    • 10 $298.87
    • 100 $265.27
    • 1000 $265.27
    • 10000 $265.27
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    Onlinecomponents.com BGA600-6-40
    • 1 $240
    • 10 $226.39
    • 100 $222.99
    • 1000 $222.99
    • 10000 $222.99
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    Master Electronics BGA600-6-40
    • 1 $240
    • 10 $226.39
    • 100 $222.99
    • 1000 $222.99
    • 10000 $222.99
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    Thomas & Betts BGA600-14-20

    6In Grnd Bush 14-2/0Wire Range Al |Abb Thomas & Betts BGA600-14-20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BGA600-14-20 Bulk 1
    • 1 $321.86
    • 10 $298.87
    • 100 $265.27
    • 1000 $265.27
    • 10000 $265.27
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    Onlinecomponents.com BGA600-14-20
    • 1 $252.63
    • 10 $238.3
    • 100 $234.73
    • 1000 $234.73
    • 10000 $234.73
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    Master Electronics BGA600-14-20
    • 1 $252.63
    • 10 $238.3
    • 100 $234.73
    • 1000 $234.73
    • 10000 $234.73
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    T&B Fittings BGA600-6-40

    Grounding Bushing, 6", Aluminum, Galvanized, Wire Range 6 to 4/0 | T&B Fittings by ABB BGA600-6-40
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS BGA600-6-40 Bulk 1
    • 1 $321.86
    • 10 $296.11
    • 100 $296.11
    • 1000 $296.11
    • 10000 $296.11
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    T&B Fittings BGA600-14-20

    Grounding Bushing, 6", Aluminum, Galvanized, Wire Range 14 to 2/0 | T&B Fittings by ABB BGA600-14-20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS BGA600-14-20 Bulk 1
    • 1 $255.82
    • 10 $237.91
    • 100 $230.24
    • 1000 $230.24
    • 10000 $230.24
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    Ironwood Electronics SG-BGA-6044

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SG-BGA-6044 5
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    BGA60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SF-BGA60B-B-11

    Abstract: No abstract text available
    Text: Tooling hole X2 Y BGA60B 6.40mm [0.252"] See BGA pattern code to the right for actual pattern layout 8.00mm [0.315"] Top View (reference only) 0.80mm typ. X Ø 0.51mm [Ø 0.020"] BGA pad 1 3.52mm [0.139"] Top View of Land Pattern Scale: 2:1 0.20mm [0.008"] dia.


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    BGA60B FR4/G10 SF-BGA60B-B-11 PDF

    BGA60C

    Abstract: 0.8mm pitch BGA LS-BGA60C-11 BGA-60
    Text: Tooling hole X2 BGA60C 6.40mm [0.252"] See BGA pattern code to the right for actual pattern layout Y 7.20mm [0.283"] Top View (reference only) 3.76mm [0.148"] 0.80mm typ. X Ø 0.51mm [Ø 0.020"] BGA pad 2.17mm [0.086"] 1 0.20mm [0.008"] dia. Top View of Land Pattern


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    BGA60C FR4/G10 LS-BGA60C-11 BGA60C 0.8mm pitch BGA BGA-60 PDF

    Samsung EOL

    Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
    Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM


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    288-576Mb 10-20ns 18-72Mb 64Kb-16Mb 8Mb-64Mb 16Mb-512Mb 16Mb-1Gb 256Mb-2Gb 200Mhz -40oC Samsung EOL IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M53D128168A 2E Operation Temperature Condition -40°C~85°C Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS)


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    M53D128168A PDF

    MBM29BS64LF

    Abstract: MBM29BS64LF-18 MBM29BT64LF-18
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed


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    DS05-20916-1E MBM29BS/BT64LF-18/25 MBM29BS/BT64LF 60-ball MBM29BS/ BT64LF-25 MBM29BT64LF-18 MBM29BS64LF-18 F0403 MBM29BS64LF MBM29BS64LF-18 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M53D128168A 2E Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.


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    M53D128168A PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20913-2E BURST MODE FLASH MEMORY CMOS 32M 2M x 16 BIT MBM29BS/BT32LF 18/25 • GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed


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    DS05-20913-2E MBM29BS/BT32LF 60-ball MBM29BS/ BT32LF-25 MBM29BT32LF-18 MBM29BS32LF-18 F0401 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M53D2561616A 2F (Preliminary) Mobile DDR SDRAM 4M x16 Bit x 4 Banks Mobile DDR SDRAM Features All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS is edge-aligned with data for READ; center-aligned with data for WRITE


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    M53D2561616A PDF

    Untitled

    Abstract: No abstract text available
    Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


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    F0401 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M13S2561616A 2K DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition


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    M13S2561616A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M13S64164A 2Y DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition


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    M13S64164A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M13S2561616A 2A Automotive Grade DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition


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    M13S2561616A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M13S128168A 2N Operation Temperature Condition -40°C~85°C DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK )


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    M13S128168A PDF

    HDQ70

    Abstract: G993 KB910Q fan control g993 LA-2781 compal Socket AM2 Compal Electronics TPS2231 ch7307c
    Text: A B C D E 1 1 Compal Confidential 2 2 HDQ70 Schematics Document Intel Dothan Processor with 915PM/915GM + DDRII + ICH6M With ATi M26-P 3 3 2005-07-29 REV: 2.0 4 4 Compal Electronics, Inc. Compal Secret Data Security Classification 2005/07/29 Issued Date


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    HDQ70 915PM/915GM M26-P) HDQ70/HDQ71 LA-2781 G993 KB910Q fan control g993 LA-2781 compal Socket AM2 Compal Electronics TPS2231 ch7307c PDF

    KB910Q

    Abstract: LS-2871 Compal Electronics PCI6411 Socket AM2 MAX1532A isl6227caz KSO151 compal ATI M26P
    Text: A B C D E 機密 1 1 Compal Confidential HTW00 LA-2871 Schematics Document 2 2 Intel Dothan with 915PM GM /910GML + DDRII + ICH6M (+VGA/B ATi M24C/M26P) 2005-08-22 REV: 1.0 3 3 4 4 2005/08/22 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification


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    HTW00 LA-2871 915PM /910GML M24C/M26P) KB910Q LS-2871 Compal Electronics PCI6411 Socket AM2 MAX1532A isl6227caz KSO151 compal ATI M26P PDF

    max1532a

    Abstract: Compal LA-2781 HDQ70 ATI M26P LA-2781 KB910Q TPS2231 EDL71 Socket AM2 Compal Electronics
    Text: A B C D E 1 1 Compal Confidential 2 2 HQD70/HDQ71 Schematics Document Intel Dothan Processor with 915PM/915GM + DDRII + ICH6M With ATi M26-P 3 3 2005-05-12 REV: 0.2 (For DVT) 4 4 Compal Electronics, Inc. Compal Secret Data Security Classification 2005/03/01


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    HQD70/HDQ71 915PM/915GM M26-P) LA-2781 max1532a Compal LA-2781 HDQ70 ATI M26P LA-2781 KB910Q TPS2231 EDL71 Socket AM2 Compal Electronics PDF

    BGA-60

    Abstract: LMX5100 0.18-um CMOS technology 0.18 um CMOS bluetooth transmitter receiver LMX5452 LMX51
    Text: BR4005_LM5452 12/2/03 8:04 AM Page 1 LMX5452: integrated baseband controller and radio National Semiconductor. Powering the wireless world. Bluetooth Bluetooth wireless solutions Introducing the next generation in Bluetooth solutions National’s LMX5452 provides the features and


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    BR4005 LM5452 LMX5452: LMX5452 BGA-60 LMX5452 LMX5100, 8/13-bit LMX5100 0.18-um CMOS technology 0.18 um CMOS bluetooth transmitter receiver LMX51 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13L2561616A 2A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition


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    M13L2561616A PDF

    EM42BM1684LBB

    Abstract: EM42BM1684LBB-75F EM42BM1684LBB-75FE
    Text: eorex EM42BM1684LBB Preliminary 512Mb 8Mx4Bank×16 Double DATA RATE SDRAM Features Description • Internal Double-Date-Rate architecture with 2 Accesses per clock cycle. • 1.8V ±0.1V VDD/VDDQ • 1.8V LV-COMS compatible I/O • Burst Length (B/L) of 2, 4, 8, 16


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    EM42BM1684LBB 512Mb EM42BM1684LBB EM42BM1684LBB-75F EM42BM1684LBB-75FE PDF

    BGA676

    Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
    Text: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18


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    BGA16A1ATTERNS BGA676 BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M53D2561616A 2F Mobile DDR SDRAM 4M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.


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    M53D2561616A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M53D2561616A 2F (Preliminary) Mobile DDR SDRAM 4M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.


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    M53D2561616A PDF

    MBM29BS64LF

    Abstract: DS05 MBM29BS64LF-18 MBM29BT64LF-18
    Text: 富士通半導体デバイス DS05–20916–1 DATA SHEET バーストモードフラッシュメモリ CMOS 64M 4 M x 16 BIT MBM29BS/BT64LF-18/25 • 概要 MBM29BS/BT64LF は , 67,108,864bit の容量で , + 1.8 V 単一電源によるチップ一括消去およびセクタ単位での消去と


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    MBM29BS/BT64LF-18/25 MBM29BS/BT64LF 864bit MBM29BS64LF MBM29BS64BT MBM29BS/BT64 MBM29BS/ BT64LF-25 DS05 MBM29BS64LF-18 MBM29BT64LF-18 PDF

    Untitled

    Abstract: No abstract text available
    Text: P-BGA60-0917-L00AZ


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