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    NXP Semiconductors BGD812,112

    IC AMP CATV SOT115J
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    BGD812 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BGD812 NXP Semiconductors BGD812 - RF/Microwave Amplifier, 40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 7 PIN Original PDF
    BGD812 NXP Semiconductors NXP Cross Reference Original PDF
    BGD812 Philips Semiconductors 860 MHz, 18.5 dB Gain Power Doubler Amplifier Original PDF
    BGD812 Philips Semiconductors CATV amplifier module Original PDF
    BGD812,112 NXP Semiconductors BGD812 - RF/Microwave Amplifier, 40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 7 PIN Original PDF
    BGD812,112 NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier - Composite second order distortion (CSO): -60 dB; Composite triple beat (CTB): -58 dB; Description: 870 MHz, 18.5 dB gain Power Doubler ; Frequency range: 40 - 870 Hz; Gain: 18.5 dB; Return loss (input/output): 23/23 dB; Total current consumption (Itot): 410 mA; Package: SOT115J; Container: Bulk Pack Original PDF

    BGD812 Datasheets Context Search

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    BGD812

    Abstract: DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD812 OT115J 613518/04/pp10 BGD812 DIN45004B

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES


    Original     		PDF M3D252 BGD812 OT115J 613518/04/pp10

    BGD812

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD812 OT115J SCA73 613518/04/pp12 BGD812

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD812 CATV amplifier module Preliminary specification 1999 Nov 25 Philips Semiconductors Preliminary specification CATV amplifier module BGD812 PINNING - SOT115J FEATURES • Excellent linearity PIN


    Original     		PDF M3D252 BGD812 OT115J MSA319 BGD812 125008/00/05/pp7

    BGD812

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D252 BGD812 CATV amplifier module Product specification Supersedes data of 2000 Apr 26 2001 Sep 07 Philips Semiconductors Product specification CATV amplifier module BGD812 FEATURES PINNING - SOT115J • Excellent linearity


    Original     		PDF M3D252 BGD812 OT115J MSA319 BGD812 SCA73 613518/03/pp12

    BGD812

    Abstract: DIN45004B CHS APR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D252 BGD812 CATV amplifier module Preliminary specification Supersedes data of 1999 Dec 01 2000 Apr 26 Philips Semiconductors Preliminary specification CATV amplifier module BGD812 FEATURES PINNING - SOT115J


    Original     		PDF M3D252 BGD812 OT115J 603518/02/pp12 BGD812 DIN45004B CHS APR

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


    Original     		PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR

    BGE788

    Abstract: Datahandbook HBCC32 TRANSIMPEDANCE mmic laser BGR269 BGS67A BGY585A BGY587 BGY587B BGY588N
    Text: Semiconductors Product Portfolio RF Access Systems CATV RF Hybrid Amplifiers * Type Number Description Reverse Hybrids BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V BGY68 75 MHz, 30 dB gain Reverse Amplifier BGY66B 120 MHz, 25 dB gain Reverse Amplifier


    Original     		PDF BGS67A BGY68 BGY66B BGY67 BGY67A BGR269 550MHz BGY588C BGY585A BGY587 BGE788 Datahandbook HBCC32 TRANSIMPEDANCE mmic laser BGR269 BGS67A BGY585A BGY587 BGY587B BGY588N

    BF1201A

    Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
    Text: RF Products RF Products 241 RF Access Systems CATV RF Hybrid Amplifiers Type Number Description Frequency Range Gain dB Slope (dB) FL S11/S22 CTB XMOD CSO @Ch @Vo (dBmV) F @fmax Itot (mA) BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V 5 - 65 25 - 26


    Original     		PDF S11/S22 BGS67A BGY68 BGY66B BGY67 13MHz 900MHz SA8027 TSSOP20) 44MHz BF1201A bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A

    bgy888

    Abstract: cable tv amplifier with bge788 BGD502 BGR269 BGS67A BGY585A BGY587 BGY587B BGY588N BGY66B
    Text: Philips Semiconductors New horizons in broadband communications Wideband modules for CATV applications Innovations in CATV power - the broadband revolution Broadband cable is today more than a delivery mechanism for TV channels. With the rapid rise in content delivery and interactive services, broadband cable access is becoming the accepted


    Original     		PDF

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


    Original     		PDF

    RF1119

    Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
    Text: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


    Original     		PDF PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1000HN TFF1003HN RF1119 TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


    Original     		PDF

    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows


    Original     		PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: May 2010 Complete solutions for CATV NXP is one of the world’s largest suppliers of CATV products, offering push-pulls, power doublers, optical receivers, and reverse hybrids. Our hybrid portfolio includes C types, specially designed for the Chinese market and customized for two major governmental projects , and complete 1 GHz GaAs HFET line-ups for high-end applications worldwide.


    Original     		PDF OM7650 BGY588C BGY585A BGY587 BGY587B BGY588N BGY685A BGY687 OM7670 BGY785A

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification CATV amplifier module BGD812 FEATURES PINNING-SOT115J • Excellent linearity PIN • Extremely low noise DESCRIPTION 1 • Excellent return loss properties input 2 and 3 • Silicon nitride passivation common


    OCR Scan     		PDF BGD812 PINNING-SOT115J SA319

    Untitled

    Abstract: No abstract text available
    Text: C5- I I I l I lO in in in o CM O o o CO >18.5 ±0.3 CO I -61 CO CO CO 860 00 T— •<fr 49 49 5 ±0.3 5 0 to 2 5 BGY685A BGY787 240 6.5 CM CO m CO CM 240 N CO BGY885A BGE788 BGY883 o 8.5 BGY785AD 265 BGY687 BGY685AL BGY685AD CO ±0.5 BGY785A 340 N 40 >15


    OCR Scan     		PDF BGY785A BGY685A BGY787 BGE788 BGY785AD BGY687 BGY685AL BGY685AD BGY687B BGY587B