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    BH202 Price and Stock

    JRH Electronics BH20289S

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    DigiKey BH20289S Bag 27 1
    • 1 $177.36
    • 10 $168.582
    • 100 $112.6182
    • 1000 $112.6182
    • 10000 $112.6182
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    JRH Electronics BH20272P

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    DigiKey BH20272P Bag 27 1
    • 1 $159.95
    • 10 $152.036
    • 100 $101.5636
    • 1000 $101.5636
    • 10000 $101.5636
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    JRH Electronics BH20288P

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    DigiKey BH20288P Bag 27 1
    • 1 $164.4
    • 10 $156.273
    • 100 $104.3818
    • 1000 $104.3818
    • 10000 $104.3818
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    JRH Electronics BH20287P

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    DigiKey BH20287P Bag 11 1
    • 1 $132.16
    • 10 $125.636
    • 100 $83.9273
    • 1000 $83.9273
    • 10000 $83.9273
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    JRH Electronics BH20260S

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    DigiKey BH20260S Bag 8 1
    • 1 $233.4
    • 10 $221.855
    • 100 $148.2
    • 1000 $148.2
    • 10000 $148.2
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    BH202 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TEKELEC 248

    Abstract: tekelec 630 cb 478 2464
    Text: MICROWAVE SILICON COMPONENTS Case styles Cb=0.4pF L 43° 47° 43° 47° K 5.49 5.89 .216 .232 Cb=0.15pF J ∅ 30.48 ∅ 31.50 1.200 DIA 1.240 DIA BH200a BH202 M 43° 47° 43° 47° L 4.12 4.52 .162 .178 K ∅ 12.14 ∅ 12.24 .478 DIA .482 DIA ∅ 3.10 ∅ 3.25 .122 DIA .128 DIA


    Original     		PDF BH202 BH200a TEKELEC 248 tekelec 630 cb 478 2464

    EH80083

    Abstract: EH80204 DH80154
    Text: SILICON PIN DIODES High voltage PIN diodes SILICON PIN DIODES FOR SWITCHING & PHASE SHIFTING APPLICATIONS MEDIUM & HIGH POWER Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction


    Original     		PDF BH141 BH141 BH301 BH300 BH300 BH202N EH80083 EH80204 DH80154

    DH80154

    Abstract: DH80080
    Text: SILICON PIN DIODES High voltage PIN diodes SILICON PIN DIODES FOR SWITCHING & PHASE SHIFTING APPLICATIONS MEDIUM & HIGH POWER Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction


    Original     		PDF conditi27d BH141 BH141 BH301 BH300 BH300 DH80154 DH80080

    bh32

    Abstract: bH-36 M208D BMH76 M208A BH158AM BH147
    Text: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / M ICRO STRIP A22e SMD3 BH15 BH28 SMD4 BH16 BH32 SMD6 BH36 BH35 SMD8 BH100 BH142a SOD323 BH101 BH142b SOT23 BH143 BH142c SOT143 BH146 BH147 BH142d POWER


    Original     		PDF BH142a BH142b BH142c BH142d BH142e BH142f BH165 BH165s BH167 BH167s bh32 bH-36 M208D BMH76 M208A BH158AM BH147

    BH204N

    Abstract: BH403a M208D BH198 BH202N M208A
    Text: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / MICRO STRIP PAGE PAGE PAGE A22e .12-48 SMD3 .12-56 BH15 .12-48 BH28 .12-48


    Original     		PDF BH142a BH142b BH142c BH142d BH142e BH142f BH167 BH167s BH198 M208a BH204N BH403a M208D BH202N

    DH80050

    Abstract: DH80055-20 DH80050-40N DH80050-01 DH80055-20N DH80050-06N DH80080 DH80055 dh80082-06 DH80082-06N
    Text: Silicon Pin Diodes Switching Pin Diodes SWITCHING PIN DIODES Breakdown Voltage Vbr @ Ir = 10 A V Serie Resistance Rs @ F= 120 MHz Ω Capacitance @ F= 1 MHz Application pF Min. Typ. Max. @ Vr = 50V Package 1 Part Number Max. @ IF=200mA Min (µs) 500 High Power Switching


    Original     		PDF BH202N BMH76 BH301 BH141 BH158AM EH80050-00 EH80051-00 DH80050-01 DH80050-40N DH80050 DH80055-20 DH80055-20N DH80050-06N DH80080 DH80055 dh80082-06 DH80082-06N

    M208A

    Abstract: BMH76
    Text: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / MICRO STRIP PAGE PAGE PAGE A22e .12-48 SMD3 .12-56 BH15 .12-48 BH28 .12-48


    Original     		PDF BH142a BH142b BH142c BH142d BH142e BH142f BH167 BH167s BH198 M208a BMH76

    DH80154

    Abstract: DH80080 DH80106 DH80051 DH80055 dh80102 BH200 DH80100 DH80120 SH93103
    Text: SILICON PIN DIODES High voltage PIN diodes MICROWAVE HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.


    Original     		PDF SH92103 SH91107 SH91207 SH90207 SH93103 DH80154 DH80080 DH80106 DH80051 DH80055 dh80102 BH200 DH80100 DH80120 SH93103

    Alc201A

    Abstract: HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN
    Text: Intel 852GME Interactive Client Reference Design User’s Guide October 2003 Order Number: 274000-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN


    Original     		PDF 852GME Alc201A HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN

    BH200

    Abstract: bh 1525
    Text: Bulk Indium Arsenide BH-200 Series Hall Sensors Instrumentation Quality Description The BH-200 series of Hall effect magnetic field sensors consists of ten models designed to meet the requirements of most magnetic field measurement applications. Models in the BH-200


    Original     		PDF BH-200 BH-205 BH-202 BH-206 BH-203 BH-207 BH200 bh 1525

    Untitled

    Abstract: No abstract text available
    Text: Bulk Indium Arsenide BH-200 Series Hall Sensors Instrumentation Quality Description The BH-200 series of Hall effect magnetic field sensors consists of ten models designed to meet the requirements of most magnetic field measurement applications. Models in the BH-200


    Original     		PDF BH-200 BH-205 BH-202 BH-206 BH-203 BH-207

    sqm1150

    Abstract: smd diode f54 sqm1250 DH60034 srd dh294 bh16 transistor step recovery diode dh252 temex DH252 M208 B1 DH294
    Text: MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 All specifications contained in that catalog are subject to change without notice.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulk Indium Arsenide BH-200 Series Hall Sensors Instrumentation Quality Description The BH-200 series of Hall effect magnetic field sensors consists of ten models designed to meet the requirements of most magnetic field measurement applications. Models in the BH-200


    Original     		PDF BH-200 BH-200 BH-206 BH-202 BH-203 BH-207

    Untitled

    Abstract: No abstract text available
    Text: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.


    Original     		PDF SH92103 SH91107 SH91207 SH90207 SH93103

    XLO8

    Abstract: BH200 BH-203 BH203 hall 503 BH-207
    Text: Bulk Indium Arsenide BH-2QQ Series Hall S e n s o rs Instrum entation Quality Description The BH-200 series of Hall e ffe ct m agnetic field sensors consists of ten m odels designed to m eet the requirem ents o f m ost m agnetic field m easurem ent applications. M odels in the BH-200


    OCR Scan     		PDF BH-200 BH-209 BH-202 BH-206 BH-203 BH-207 XLO8 BH200 BH203 hall 503