BIPOLAR BC TRANSISTOR Search Results

BIPOLAR BC TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
CA3082	Rochester Electronics LLC	Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	Small Signal Bipolar Transistor
GT30J110SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)

BIPOLAR BC TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
bc 617 transistor equivalent Abstract: FMMT-617 FMMT617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT717 FMMT720 Text: Application Note 15 Issue 1 November 1995 Application Note 15 Issue 1 November 1995 Features and Applications of the FMMT617 and FMMT717 “SuperSOT” SOT23 Transistors The FMMT717, though not quite as good as it’s NPN counterpart, still gives excellent performance. It is a 12V PNP	Original	PDF	FMMT617 FMMT717 FMMT717, 160mV 100mA FMMT717 bc 617 transistor equivalent FMMT-617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT720
BSS125 Abstract: transistor BC SERIES BUZ MOSFET 4013 flipflop FREDFET bc 4013 MOS 4011 TRANSISTOR BC 560 bipolar BC transistor Baw delay line Text: FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components Appnote 43 by Walter Schumbrutzki With higher clock frequencies in power switches inversecapable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (≤ 2 kW)	Original	PDF
bc 5411 Abstract: BC107 pin configuration BC108 pin configuration BC108 transistor BC108 BC107 BC107 DATASHEET bc108b equivalent BC107B Transistor BC107 Text: BC107/BC108 Series Low Power Bipolar Transistors General Purpose Amplifier/Switches Feature: • NPN Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27	Original	PDF	BC107/BC108 BC107 BC108 bc 5411 BC107 pin configuration BC108 pin configuration BC108 transistor BC108 BC107 BC107 DATASHEET bc108b equivalent BC107B Transistor BC107
HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design Abstract: No abstract text available Text: RMO1D-1 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design Tzung-Yin Lee and Yuh-Yue Chen Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents a methodology to characterize and model BJT’s mismatch behavior for RFIC	Original	PDF	40PA/Pm2 200PA/Pm2 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design
FMMT634TA Abstract: FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage	Original	PDF	OT223 150mA FZT560 GL-106, FMMT634TA FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F
BC177 NPN transistor Abstract: BC177 pnp transistor Transistor BC 177 Datasheet Transistor BC177 BC177 transistor BC178-BC179 BC177 NPN transistor datasheet BC178B transistor bc178 BC178 Text: BC177 BC178 BC179 MECHANICAL DATA Dimensions in mm inches GENERAL PURPOSE SMALL SIGNAL PNP BIPOLAR TRANSISTOR 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) APPLICATIONS ) ) 1 7 1 . ( ( 3	Original	PDF	BC177 BC178 BC179 BC177 NPN transistor BC177 pnp transistor Transistor BC 177 Datasheet Transistor BC177 BC177 transistor BC178-BC179 BC177 NPN transistor datasheet BC178B transistor bc178 BC178
micron so8n FOOTPRINT Abstract: M24M01 DFN 4X4 ST2G3236 current fed push pull topology st7fliteu09b6 BUL741 STMPE2401 STMPE801 STV300NH02L Text: 2. TDE1708DFT High-Side and Low-Side Power Switch in a Tiny Package 3. Xpander LOGIC Simple Solution to System Expansion 4. STV300NH02L Sub mΩ Power MOSFETs Boost Efficiency in Server Power Supplies 5. BUL741 Cost Competitive Power Bipolar Transistor for Low Power, Current Fed HF Ballasts	Original	PDF	TDE1708DFT STV300NH02L BUL741 M24M01: ST2G3236 OT-666 micron so8n FOOTPRINT M24M01 DFN 4X4 current fed push pull topology st7fliteu09b6 BUL741 STMPE2401 STMPE801 STV300NH02L
SiC BJT Abstract: Transistor BC 457 bipolar transistor ghz s-parameter 4h sic rf POWER BJTs RF transistors with s-parameters RF Transistor s-parameter NPN transistor mhz s-parameter bipolar transistor s-parameter RF Bipolar Transistor Text: Copyright c [Year] IEEE. Reprinted from (relevant publication info). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Advanced Power Technology's products or services. Internal or personal use of this material is permitted. However, permission to	Original	PDF
transistor BC 245 Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136 Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the	Original	PDF
Untitled Abstract: No abstract text available Text: Small-signal Discretes • 0.5 - 8 A, ≤ 100 V, single, double configurations incl. BISS load switches; 13 package options • High voltage transistors 150 - 500 V, 0.1 - 2 A incl. low VCEsat; 5 package options • Resistor-equipped transistors 0.1 - 0.6 A, ≤ 50 V; 8 package options	Original	PDF	OT223/SOT89 2N7002*
transistor bc 7-40 Abstract: 6mbi100fc 6MBI100FC060 American Microsemiconductor 6MBI100FC-060 Text: 6MBI100FC-060 FUJI Electric IGBT Transistor Module Advancing the Semiconductor Industry Since 1972 Abstract The 6MBI100FC-060 is a discontinued insulated-gate bipolar transistor in a modular package by FUJI Electric, currently in “Last Time Buy” sale through American	Original	PDF	6MBI100FC-060Module 6MBI100FC-060 AS/EN/JISQ9100 ISO9001 transistor bc 7-40 6mbi100fc 6MBI100FC060 American Microsemiconductor
Transistor BC 227 Abstract: No abstract text available Text: PD-9.1620 International I R Rectifier IRG4 BC 2 0 K-S prelim inary Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =1 Ops, @360V VCE start , T j = 125°C, V ge = 15V	OCR Scan	PDF	554S2 Transistor BC 227
transistor BC SERIES Abstract: bd transistor series BC transistor series BIPOLAR TRANSISTOR 2n transistor KSA transistor D.A.T.A. book ksd transistor series bd transistor data book Text: TRANSISTOR DATA BOOK Small Signal TR KSA Ser es KSB Ser es KSC Ser es KSD Ser es KSK Ser es KSR Ser es 2N Ser es BC Ser es KST Ser es KSP Ser es SS Ser es Bipolar Power TR KSA Series KSB Series KSC Series KSD Series BD Series BU Series KSH Series KSE Series	OCR Scan	PDF
603 transistor npn Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906 Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type	OCR Scan	PDF	000b515 2N918 2N2222A 2N2369 2N2484 2N2907A 2N2945 2N3019 2N3117 2N3251A 603 transistor npn 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906

ssot-6 Abstract: MMBT pnp FJ sot23 sot 223 fairchild Text: Discrete Power and Signal Technologies Fairchild S em iconductor Selection Guides Surface Mount Bipolar Transistors G eneral Purpose A m p lifie rs and S w itches Part lc mA BV Min Number - Min M ax P ackage mA NPN I MMBT100 45 500 100 MMBT3904 40 200 Ü§	OCR Scan	PDF	MMBT100 MMBT3904 MMBT2222A MMBT4401 MMBTA05 PZT2222A PZT3904 NMT2222A OT-23 ssot-6 MMBT pnp FJ sot23 sot 223 fairchild
diac D30 Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551 Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED	OCR Scan	PDF	OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
bc557 Abstract: BDX472 BDX452 Text: Philips Semiconductors Concise Catalogue 1996 Small-signal transistors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS GENERAL-PURPOSE L.F. BIPOLAR TRANSISTORS CONTINUED _ LEADED TYPES ratings type num ber characteristics	OCR Scan	PDF	BC160 BC161 BC177 BC327 BC328 BC369 BC556 BC557 BC558 BC636 BDX472 BDX452
603 transistor npn Abstract: BT 316 transistor Text: ALLEGRO MICROSYSTEMS INC BIPOLAR TRANSISTORS bbE i • DSDH33Ô Q00bS17 23Ö * A L G R ELECTRICAL CHARACTERISTICS at TA= + 25°C A 'cBO 'c Max. V T BR CBO V ’ (BR)CEO V ¥(BR)EBO Max. (V) (nA) 'cEO @ V CB Max. @ V CE (V) (nA) (V) — — — — — —	OCR Scan	PDF	DSDH33Ã Q00bS17 D40D11 THC40D11 D41D11 THC41D11 0S0433fl 05D433fl 603 transistor npn BT 316 transistor
lm 7803 Abstract: "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor 60GHz transistor AVALANCHE TRANSISTOR 60Ghz TRANSISTOR 30GHZ 30GHZ Text: IEEE BCTM 10.1 A Comprehensive Bipolar Avalanche Multiplication Compact Model for Circuit Simulation WJ. Kloosterman, J.C.J. Paasschens, and R.J. Havens Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands tel.: +31 40 2744093, email: Willy.Kloosterman@philips.com	OCR Scan	PDF	30GHZ, 60GHZ ED-42 ED-39 lm 7803 "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor 60GHz transistor AVALANCHE TRANSISTOR TRANSISTOR 30GHZ 30GHZ
RF Transistor s-parameter Abstract: bipolar transistor s-parameter lm 7803 s-parameter RF POWER TRANSISTOR NPN BJT with i-v characteristics transistor D 5032 bipolar transistor ghz s-parameter 60Ghz TRANSISTOR 30GHZ qubic4 Text: IEEE BCTM 10.2 An S-parameter Technique for Substrate Resistance Characterization of RF Bipolar Transistors S.D. Harker, R.J. Havenst , J.C.J. Paasschenst , D. Szmyd, L.F. Tiemeijer, and E.F. Weagel ‘ Philips Semiconductors, 9201 Pan American Frwy. NE, Albuquerque, NM 87113, USA	OCR Scan	PDF
NF 847 G Abstract: NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X Text: System Overview Outdoor Unit SAT - TV Low Noise Converter LNC RF Amplifier Mixer Oscillator 3. Stage active passive CFY 35-20 CFY 35-23 BAT 15-099/ BAT 15-04 IF-Amplifier 1. Stage 2. Stage BFP 405 BFP 420 CFY 30/ BFP 405 Power Supply 2 x BCX 51 3 x BC 858/W	OCR Scan	PDF	858/W 857/W IQ62702-C1847 Q62702-C954 62702-C1884 Q62702-C1850 Q62702-C1742 Q62702-F1393 Q62702-F1394 Q62703-F97 NF 847 G NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X
BTA18 Abstract: MMBT pnp BT5771 SOT23 M Text: Fairchild Semiconductor Qjscrete pQwer an j SjQna\| JeChnOlOQieS Selection Guides Surface Mount Bipolar Transistors (continued Low Noise Amplifiers Part Number NF (dB) M ax BV Min Mm T » 6 nA Package V20S ÛI SOT-23 m 10 SOT-23 1 SOT-23 NMi M M B T 5089	OCR Scan	PDF	BTA18 OT-23 OT-23 BC857C BC858C BC859C MMBT pnp BT5771 SOT23 M
THC3251A Abstract: pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE 2N2222A 2N2369 Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) — — Device Allegro	OCR Scan	PDF	SG433a 2N918 THC918 2N2222A THC2222A 2N2369 THC2369 2N2484 THC2484 2N2907A THC3251A pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE
372M Abstract: BC372M Text: Section S: Bipolar Transistors D a rlin g to n T r a n s is to rs E-Line PIMP High Perform ance D a r l i n g t o n T r a n s ' s t o i s - Po = up t 1W} Pinout :1-Collector, 2-Base,	OCR Scan	PDF	FXT705 PSA12P 372M BC372M

BIPOLAR BC TRANSISTOR Search Results

BIPOLAR BC TRANSISTOR Result Highlights (5)

BIPOLAR BC TRANSISTOR Datasheets Context Search

bc 617 transistor equivalent

BSS125

bc 5411

HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design

FMMT634TA

BC177 NPN transistor

micron so8n FOOTPRINT

SiC BJT

transistor BC 245

Untitled

transistor bc 7-40

Transistor BC 227

transistor BC SERIES

603 transistor npn

ssot-6

diac D30

bc557

603 transistor npn

lm 7803

RF Transistor s-parameter

NF 847 G

BTA18

THC3251A

372M