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    BIPOLAR JUNCTION TRANSISTOR NPN VCE 3.7 SERIES Search Results

    BIPOLAR JUNCTION TRANSISTOR NPN VCE 3.7 SERIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR JUNCTION TRANSISTOR NPN VCE 3.7 SERIES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UC3550 CMOS IC PWM CONTROLLED, PWM/PFM SWITCHABLE STEP-UP DC-DC CONTROLLER 4 5 „ DESCRIPTION The UTC UC3550 series is a compact, high efficiency, step-up DC/DC controllers includes an error amplifier, oscillator, PWM comparator, skip cycle comparator, voltage reference, soft-start, and


    Original     		PDF UC3550 UC3550 QW-R502-082

    MJ10000

    Abstract: MJ10001 1N4937 voltage regulators 6 amp to3
    Text: MOTOROLA Order this document by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,


    Original     		PDF MJ10000/D* MJ10000/D MJ10000 MJ10001 1N4937 voltage regulators 6 amp to3

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UC3550 CMOS IC PWM CON T ROLLED, PWM /PFM SWI T CH ABLE ST EP-U P DC-DC CON T ROLLER 4 5 ̈ DESCRI PT I ON 3 The UTC UC3550 series is a compact, high efficiency, step-up DC/DC controllers includes an error amplifier, oscillator, PWM


    Original     		PDF UC3550 UC3550 QW-R502-082

    2N6191

    Abstract: MJE1320 IC 7403 2N5337 AM503 MR856 P6302 frb21
    Text: MOTOROLA Order this document by MJE1320/D SEMICONDUCTOR TECHNICAL DATA MJE1320 Designer's  Data Sheet NPN Silicon Power Transistor Switchmode Series This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for


    Original     		PDF MJE1320/D* MJE1320/D 2N6191 MJE1320 IC 7403 2N5337 AM503 MR856 P6302 frb21

    inverter in 12v DC to 220v AC 400w circuit diagrams

    Abstract: step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV
    Text: Discrete Devices 2009-5 SANYO Discrete Devices SANYO's environmentally-considered discrete ECoP contributes to the realization of comfortable life in various aspects. Discrete devices and ExPDs power device are environmentally-considered products that well address the needs (small size, low profile, high efficiency & high reliability)


    Original     		PDF EP124A inverter in 12v DC to 220v AC 400w circuit diagrams step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV

    Flyback Transformers SANYO TV

    Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
    Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)


    Original     		PDF CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams

    MTP12N10 pin configuration

    Abstract: MTP12N10 P6302
    Text: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJW16010A*  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in


    Original     		PDF MJW16010A/D MJW16010A/D* MTP12N10 pin configuration MTP12N10 P6302

    NXP SMD ZENER DIODE MARKING CODE

    Abstract: PVR100AZ-B3V3 PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B12V PVR100AZ-B2V5 PVR100AZ-B3V0 PVR100AZ-B5V0
    Text: PVR100AZ-B series Voltage regulator series Rev. 01 — 16 November 2006 Product data sheet 1. Product profile 1.1 General description Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number PVR100AZ-B2V5 Package


    Original     		PDF PVR100AZ-B OT457 PVR100AZ-B2V5 OT223 SC-73 PVR100AD-B2V5 PVR100AZ-B3V0 PVR100AD-B3V0 PVR100AZ-B3V3 PVR100AD-B3V3 NXP SMD ZENER DIODE MARKING CODE PVR100AZ-B3V3 PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B12V PVR100AZ-B2V5 PVR100AZ-B3V0 PVR100AZ-B5V0

    TRANSISTOR 117a

    Abstract: No abstract text available
    Text: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN 509 Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels


    Original     		PDF 2N2857 MIL-MRF19500 TRANSISTOR 117a

    2N2857

    Abstract: 2N2857 JANTXV MRF 110 2N2857 JANTX 2N2857 JAN low noise transistors microwave
    Text: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN 509 Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels


    Original     		PDF 2N2857 MIL-MRF19500 2N2857 2N2857 JANTXV MRF 110 2N2857 JANTX 2N2857 JAN low noise transistors microwave

    ZHD100

    Abstract: zetex t1048 SM-8 Package T1048 pnp npn dual emitter connected motor driver full bridge 10A 100V MH88615 ZDT1048 MOULDED BRIDGES ic siren
    Text: Application Note 24 Issue 2 January 1996 An Introduction to the SM-8 Package Mike Townson Introduction Over recent years the benefits for companies to move to surface mount technology has lead to significant growth in the component industry. The requirements on the component


    Original     		PDF OT223 100mA 100ms 100us 100mV ZHD100 zetex t1048 SM-8 Package T1048 pnp npn dual emitter connected motor driver full bridge 10A 100V MH88615 ZDT1048 MOULDED BRIDGES ic siren

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


    Original     		PDF 1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046

    Untitled

    Abstract: No abstract text available
    Text: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA


    Original     		PDF AT-41532 OT-323 SC-70) SC-70 OT-323) AT-41532 5965-6167E

    AT-41532

    Abstract: TRANSISTOR TT 2190 transistor ajw
    Text: AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery powered


    Original     		PDF AT-41532 AT-41532 OT-323 SC-70) MGA-81563 5989-2650EN AV02-1964EN TRANSISTOR TT 2190 transistor ajw

    Untitled

    Abstract: No abstract text available
    Text: H- Il GENNUM ' corporati Om LA200 Series LA250 mODM6 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction


    OCR Scan     		PDF LA201 LA202

    Untitled

    Abstract: No abstract text available
    Text: G EIM IM U M c or por at i Om LA200 Series LA250 mOBM SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction


    OCR Scan     		PDF LA200 LA250

    mj10000

    Abstract: MJ10001
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The M J10000 Darlington transistor is designed for high-voltage, high-speed,


    OCR Scan     		PDF MJ10000 MJ10000 MJ10001

    bipolar transistor td tr ts tf

    Abstract: AN952 16010a
    Text: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA M JW 16010A * D esigner’s Data Sheet ‘ Motorola Preferred Device NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in


    OCR Scan     		PDF MJW16010A/D 6010A 6010A 340K-01 bipolar transistor td tr ts tf AN952 16010a

    rohm mtbf

    Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this


    OCR Scan     		PDF 1S211 1S22I MRF20030 rohm mtbf kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJE1320/D SEMICONDUCTOR TECHNICAL DATA M JE1320 D esigner’s Data Sheet NPN Silicon Power Transistor Switchmode Series This transistor is designed for high-voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for


    OCR Scan     		PDF MJE1320/D JE1320 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ10000/D SEMICONDUCTOR TECHNICAL DATA M J10000 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS T he M J1 0 0 0 0 D a rlin g to n tra n s is to r is d e s ig n e d fo r high -v o lta g e , h ig h -s p e e d ,


    OCR Scan     		PDF MJ10000/D J10000 O-204AA

    CMPZ4124

    Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
    Text: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches


    OCR Scan     		PDF OT-23 350mW CMPT8099 CMPT2222A OT-23 OT-223 OT-89 CQ89D CQ89DS CMPS5061 CMPZ4124 CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B

    sot303

    Abstract: No abstract text available
    Text: Wfiït mitÍM HP AECWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Amplifier Tested 900 MHz Performance: 1.3 dB NF,


    OCR Scan     		PDF AT-32063 OT-363 vailable111 OT-363 5665-1234E sot303

    PJ 0349

    Abstract: PJ 2399 0709s
    Text: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA


    OCR Scan     		PDF AT-41532 SC-70 OT-323) OT-323 SC-70) 1-800-Z35-031Z 5965-6167E PJ 0349 PJ 2399 0709s