Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BIPOLAR MIXER Search Results

    BIPOLAR MIXER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TB67S539FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=2/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67S549FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=1.5/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR MIXER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2A1045

    Abstract: AU-1433 miteq AM-3A-000110 AU-1547 AU155 AMP-1502 am-1523 miteq bipolar amplifiers D234B
    Text: Back to Bipolar Amplifier Home Page BIPOLAR AMPLIFIERS Amplifiers By Frequency BIPOLAR AMPLIFIERS 10 kHz – 2 GHz UPDATE FALL 1999 Medium Power Amps. Special Application Amps. Amps. By Model Number Performance Curves Outline Drawings • • • • AU Series


    Original     		PDF D-234 D-234B 2A1045 AU-1433 miteq AM-3A-000110 AU-1547 AU155 AMP-1502 am-1523 miteq bipolar amplifiers D234B

    8 pin ic 3844 for 5 volts

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 transistor zo 107
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.


    Original     		PDF AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-1234E 5965-8921E 8 pin ic 3844 for 5 volts AT-32063-BLK AT-32063-TR1 transistor zo 107

    transistor zo 107

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.


    Original     		PDF AT-32063 AT-32063 OT-363 OT-363 SC-70) transistor zo 107 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor

    advantages and disadvantages of gilbert cell

    Abstract: iam-81018 IAM-81028 gilbert cell differential pair S010 active double balanced mixer gilbert cell mixer bipolar mixer
    Text: A 5.0 GHz Bipolar Active Mixer Application Note S010 Introduction This applications note contrasts the features and performance of an active bipolar Gilbert cell based mixer with conventional passive diode mixers. The note starts with a review of mixer fundamentals, and continues with


    Original     		PDF IAM-81028 5091-6132E 5966-0453E advantages and disadvantages of gilbert cell iam-81018 IAM-81028 gilbert cell differential pair S010 active double balanced mixer gilbert cell mixer bipolar mixer

    advantages and disadvantages of gilbert cell

    Abstract: IAM-81018 bipolar mixer gilbert cell differential pair iam81018 diode mixers Gilbert Cell
    Text: A 5.0 GHz Bipolar Active Mixer Application Note S010 Introduction This applications note contrasts the features and performance of an active bipolar Gilbert cell based mixer with conventional passive diode mixers. The note starts with a review of mixer fundamentals, and continues with


    Original     		PDF IAM-81028 5091-6132E 5966-0453E advantages and disadvantages of gilbert cell IAM-81018 bipolar mixer gilbert cell differential pair iam81018 diode mixers Gilbert Cell

    C3228

    Abstract: x6889m epcos x6889m PU10623EJ01V0DS X6889 GRM36B GRM39B c3228 transistor GRM39CH IC MARKING amp 1005
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3228T5S LOW DISTORTION DOWN-CONVERTER + AGC AMPLIFIER + VIDEO AMPLIFIER DESCRIPTION The μPC3228T5S is a silicon bipolar monolithic IC designed for use as IF down-converter for digital TV, digital CATV. This IC consists of AGC amplifier, mixer and video amplifier.


    Original     		PDF PC3228T5S PC3228T5S 32-pin PU10623EJ01V0DS C3228 x6889m epcos x6889m PU10623EJ01V0DS X6889 GRM36B GRM39B c3228 transistor GRM39CH IC MARKING amp 1005

    c3228

    Abstract: x6889m epcos x6889m c3228 transistor PU10623EJ01V0DS GRM39B SY QFN PC3228T5S 617DB-1674 TOKO RF TRANSFORMER
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT +PC3228T5S LOW DISTORTION DOWN-CONVERTER + AGC AMPLIFIER + VIDEO AMPLIFIER DESCRIPTION The +PC3228T5S is a silicon bipolar monolithic IC designed for use as IF down-converter for digital TV, digital CATV. This IC consists of AGC amplifier, mixer and video amplifier.


    Original     		PDF PC3228T5S PC3228T5S 32-pin c3228 x6889m epcos x6889m c3228 transistor PU10623EJ01V0DS GRM39B SY QFN 617DB-1674 TOKO RF TRANSFORMER

    1am surface mount diode

    Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
    Text: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC


    Original     		PDF O-226AA O-236AB OT-23) OT-223) MMBTA42LT1 MMBT5551LT1 BSP52T1 1am surface mount diode c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f

    2sc5066

    Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs


    Original     		PDF SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136

    9006

    Abstract: HS350 VP215 uPC8217TU
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8217TU SILICON MMIC LNA + MIX IC FOR 1.9 GHz PHS DESCRIPTION The µPC8217TU is a silicon monolithic integrated circuit designed for use as LNA Low Noise Amplifier + Mixer for 1.9 GHz PHS. This IC manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process.


    Original     		PDF PC8217TU PC8217TU 9006 HS350 VP215 uPC8217TU

    BUT11ApX equivalent

    Abstract: PH4030AL philips uhp lamp driver power supply circuit diagram using ic tea1530 BT136 testing power management selection guide BU4508DX equivalent 2n7002 12w nxp BSN304 equivalent bu2508af equivalent
    Text: Power Management selection guide 2008 Leading the power efficient connected world Table of contents Power MOSFETs 4 Automotive MOSFETs 16 Power Bipolar Transistors 20 Complex Discretes 22 Small-signal bipolar transistors 28 SCR's Triacs and Trigger Devices


    Original     		PDF

    BCs 43 TRANSISTOR

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1
    Text: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design.


    Original     		PDF AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-8921E 5989-2645EN BCs 43 TRANSISTOR AT-32063-BLK AT-32063-TR1

    sot-23 marking code 352

    Abstract: AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK AT-30533-TR1 AT-310 AT30533
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA


    Original     		PDF AT-30511 AT-30533 AT-30511: AT-30533: OT-23 OT-143 AT-30511 AT-30533 OT-23, sot-23 marking code 352 AT-30511-BLK AT-30511-TR1 AT-30533-BLK AT-30533-TR1 AT-310 AT30533

    Untitled

    Abstract: No abstract text available
    Text: OPA1602 OPA1604 Burr-Brown Audio SBOS474 – APRIL 2011 www.ti.com High-Performance, Bipolar-Input AUDIO OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION • • • • • • • • The OPA1602 and OPA1604 bipolar-input operational amplifiers achieve very low 2.5nV/√Hz


    Original     		PDF OPA1602 OPA1604 SBOS474 OPA1602, 35MHz 120dB OPA1604

    SAW GPS GLONASS filter

    Abstract: GPS jamming detector GLONASS chip ADS varactor diode Symmetricom varactor diode ADS GLONASS gps/glonass receivers AN640 gilbert cell differential pair
    Text: Maxim > App Notes > ASICs WIRELESS, RF, AND CABLE Keywords: GPS, GLONASS, silicon bipolar, gps receivers, maxim, GST-2, QuickChip, QC-9, glonass receiver, ASIC Mar 31, 2000 APPLICATION NOTE 640 A Single Chip Silicon Bipolar Receiver for GPS/GLONASS Applications


    Original     		PDF 130dB, -31dBm. com/an640 AN640, APP640, Appnote640, SAW GPS GLONASS filter GPS jamming detector GLONASS chip ADS varactor diode Symmetricom varactor diode ADS GLONASS gps/glonass receivers AN640 gilbert cell differential pair

    AT-32011-BLK

    Abstract: AT-32011 AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 900 mhz oscillator ckt
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA


    Original     		PDF AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 AT-32011 AT-32033 AT-32011-BLK AT-32011-TR1 AT-32033-BLK AT-32033-TR1 900 mhz oscillator ckt

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Mixer PMB 2331 Bipolar IC Preliminary Spezification Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Reduced external components • Frequency range up to 2.0 GHz • 2.7-4.5V supply voltage • Mixer current adjustable with external resistors


    OCR Scan     		PDF 25GHz fl23SbG5

    Untitled

    Abstract: No abstract text available
    Text: m H EW LETT* PA CK A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high perform ance NPN bipolar transis­


    OCR Scan     		PDF AT-32063 OT-363 SC-70) AT-32063 OT-363

    AT-310

    Abstract: AT-31011 AT-31033 SAI SOT23
    Text: Thal mLßm HP AE CWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data - I AT-31011 AT-31033 Features Description • High Perform ance Bipolar


    OCR Scan     		PDF AT-31011 AT-31033 AT-31011: AT-31033: OT-143 OT-143 AT-31011) OT-23 AT-31033) AT-310 SAI SOT23

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Mixer/Amplifier PMB 2333 Bipolar IC Preliminary Specification •- Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Small outline T-SSOP 16 package • Reduced external components • Frequency range up to 3.0GHz • Amplifier may be used as LNA or Driver


    OCR Scan     		PDF 25GHz 12dBm T-SSOP-16 fl235b05 fi23StiQS A23SbD5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS LNA/Mixer PMB 2332 Bipolar IC Target Spezification Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Frequency range up to 3.0GHz • Small outline T-SSOP 16 package • 2.7-4.5V voltage supply • -40° C to +85° C operational temperature range


    OCR Scan     		PDF 25GHz T-SSOP-16 235bD5 fl235b05 fi235b05 fl23SLD5

    2,5GHz oscillator

    Abstract: 3A-34 8GHz oscillator
    Text: SIEM EN S LNA/Mixer PMB 2332 Bipolar IC Target Spezification Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Frequency range up to 3.0GHz • Small outline T-SSOP 16 package • 2.7-4.5V voltage supply • -40°C to +85°C operational temperature range


    OCR Scan     		PDF 25GHz T-SSOP-16 235L05 T-SSOP-16 fl23ShDS 07fi2fcJcà 2,5GHz oscillator 3A-34 8GHz oscillator

    old Resistors Siemens s

    Abstract: characteristics of mixer circuit diagram 900MHZ PMB2333 S-11
    Text: SIEM EN S Mixer/Amplifier PMB 2333 Preliminary Specification Bipolar 1C ~ Functional Description, Benefits: • New B6HF bipolar technology, 25G H z ft • Small outline T-SSO P 16 package • Reduced external components • Frequency range up to 3.0GHz • Amplifier may be used as LNA or Driver


    OCR Scan     		PDF 25GHz 12dBm fl23Sb05 623SbQS T-SSOP-16 fl23SbD5 old Resistors Siemens s characteristics of mixer circuit diagram 900MHZ PMB2333 S-11

    at30b

    Abstract: AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533
    Text: warn HEWLETT ASEI PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30633 F eatu res D escription * High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation * Amplifier Tested 900 MHz


    OCR Scan     		PDF AT-30511 AT-30633 AT-30533 OT-23 OT-143 OT-23, at30b AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533