BIPOLAR SWITCHING TRANSISTOR VCBO Search Results

BIPOLAR SWITCHING TRANSISTOR VCBO Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
GT30J110SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L

BIPOLAR SWITCHING TRANSISTOR VCBO Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UN1518 Abstract: UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR FEATURES * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) *Pb-free plating product number: UN1518L ORDERING INFORMATION Order Number	Original	UN1518 UN1518L UN1518-AE3-R UN1518L-AE3-R OT-23 QW-R206-088 UN1518 UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor	PDF
UN1518 Abstract: UN1518-AE3-R UN1518L-AE3-R Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR FEATURES * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) Lead-free: UN1518L Halogen-free:UN1518G ORDERING INFORMATION Normal UN1518-AE3-R	Original	UN1518 UN1518L UN1518G UN1518-AE3-R UN1518L-AE3-R UN1518G-AE3-R OT-23 QW-R206-088 UN1518 UN1518-AE3-R UN1518L-AE3-R	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR  FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT)  ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UN1518L-AE3-R	Original	UN1518 UN1518L-AE3-R UN1518G-AE3-R OT-23 QW-R206-088	PDF
UN1518 Abstract: UN1518L-AE3-R UN1518G-AE3-R Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT) ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UN1518L-AE3-R	Original	UN1518 UN1518L-AE3-R UN1518G-AE3-R OT-23 QW-R206-088 UN1518 UN1518L-AE3-R UN1518G-AE3-R	PDF
MJE13007D Abstract: NPN Transistor 50A 400V 24 pin ic utc rc Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is	Original	MJE13007D MJE13007D MJE13007DL-TA3-T MJE13007DG-TA3-T O-220 MJE13007DL-TA3-T O-220 QW-R203-042 NPN Transistor 50A 400V 24 pin ic utc rc	PDF
Untitled Abstract: No abstract text available Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available	Original	2N4209C1A 2N4209C1B -50mA 360mW 05mW/Â 2N4209C1B	PDF
Untitled Abstract: No abstract text available Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available	Original	2N4209C1A 2N4209C1B -50mA 360mW 05mW/Â	PDF
Untitled Abstract: No abstract text available Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209C1A & 2N4209C1B • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available	Original	2N4209C1A 2N4209C1B -50mA 360mW 05mW/Â	PDF
2N4209 Abstract: No abstract text available Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209 • Hermetic TO18 Metal Package • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	2N4209 -50mA 360mW 05mW/Â 3801s, O-206AA) 2N4209	PDF
MJE13007G Abstract: MJE13007 utc mje13007l MJE13007-TA3-T MJE13007L-TA3-T MJE13007* transistor TRANSISTOR BIPOLAR 400V 20A silicon transistor Vcbo 800 Vceo 1000 Ic 20A NPN Transistor 50A 400V 700 v power transistor Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is	Original	MJE13007 MJE13007 MJE13007L MJE13007G MJE13007-TA3-T MJE13007-TF3- MJE13007L-TA3-T MJE13007L-TF3- MJE13007G-TA3-T MJE13007G-TF3- MJE13007G utc mje13007l MJE13007-TA3-T MJE13007L-TA3-T MJE13007* transistor TRANSISTOR BIPOLAR 400V 20A silicon transistor Vcbo 800 Vceo 1000 Ic 20A NPN Transistor 50A 400V 700 v power transistor	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is	Original	MJE13007 MJE13007 MJE13007L-TA3-T MJE13007G-TA3-T MJE13007L-TF3-T MJE13007G-TF3-T MJE13007L-TF1-T MJE13007G-TF1-T MJE13007L-TF2-T MJE13007G-TF2-T	PDF
MJE13007-M Abstract: NPN Transistor 50A 400V 24 pin ic utc rc 400v 50A Transistor Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-M is designed for high-voltage and high-speed power switching inductive circuits where fall time is	Original	MJE13007-M MJE13007-M MJE13007L-M-TA3-T MJE13007G-M-TA3-T O-220 MJE13007L-M-TA3-T O-220 QW-R204-028 NPN Transistor 50A 400V 24 pin ic utc rc 400v 50A Transistor	PDF
Untitled Abstract: No abstract text available Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209 • Hermetic TO18 Metal Package • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	2N4209 -50mA 360mW 05mW/Â O-206AA)	PDF
MJE13007G Abstract: rb28 MJE13007 utc mje13007l MJE13007L-TA3-T MJE13007-TA3-T MJE13007* transistor MJE130 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is	Original	MJE13007 MJE13007 MJE13007L MJE13007G MJE13007-TA3-T MJE13007-TF3-R MJE13007L-TA3-T MJE13007L-TF3-R MJE13007G-TA3-T MJE13007G-TF3-R MJE13007G rb28 utc mje13007l MJE13007L-TA3-T MJE13007-TA3-T MJE13007* transistor MJE130	PDF

Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-Q Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007-Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is	Original	MJE13007-Q MJE13007-Q MJE13007L-Q-TA3-T MJE13007G-Q-TA3-T O-220 QW-R203-046	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-P Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is	Original	MJE13007-P MJE13007-P MJE13007L-P-TA3-T MJE13007G-P-TA3-T O-220 QW-R203-047	PDF
T350 sot223 Abstract: AYW marking code IC t350 MMJT350T1 MMJT350T1G Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features 0.5 AMPERE POWER TRANSISTOR	Original	MMJT350T1 OT-223 MMJT350T1/D T350 sot223 AYW marking code IC t350 MMJT350T1 MMJT350T1G	PDF
transistor mje13007 equivalent Abstract: mje13007 equivalent equivalent of transistor mje13007 silicon transistor Vcbo 800 Vceo 1000 Ic 20A MJE13007L-TA3-T TO-220F torque MJE13007 MJE13007-TA3-T MJE13007-TF3-T MPF930 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS 1 TO-220 DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is	Original	MJE13007 O-220 MJE13007 O-220F MJE13007L MJE13007-TA3-T MJE13007L-TA3-T MJE13007-TF3-T MJE13007L-TF3-T transistor mje13007 equivalent mje13007 equivalent equivalent of transistor mje13007 silicon transistor Vcbo 800 Vceo 1000 Ic 20A MJE13007L-TA3-T TO-220F torque MJE13007-TA3-T MJE13007-TF3-T MPF930	PDF
D4124PL Abstract: Jilin Sino-Microelectronics 110V AC to 5V DC ic 3DD41 3DD4124PL 3dd4124 D412 Text: Fast-Switching NPN Bipolar Transistor R D4124PL Characteristics ◆Middle Breakdown Voltage ◆High Current Capability ◆High Switching Speed ◆High Ruggedness Applications 110V AC ◆ Electronic Ballasts For Fluorescent Lighting ◆ Electronic Transformers	Original	D4124PL 3DD4124PL 25TO-92 O-126) Tel864324678411 D4124PL Jilin Sino-Microelectronics 110V AC to 5V DC ic 3DD41 3dd4124 D412	PDF
NPN Transistor 50A 400V Abstract: to220f transistor Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS 1 TO-220 1 TO-220F DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is	Original	MJE13007 O-220 O-220F MJE13007 O-220F1 MJE13007L-TA3-T MJE13007G-TA3-T MJE13007L-TF3-T MJE13007G-TF3-T MJE13007L-TF1-T NPN Transistor 50A 400V to220f transistor	PDF
Untitled Abstract: No abstract text available Text: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available	Original	2N2894AC1 -200mA 360mW 88mW/Â 2N2894AC1B	PDF
2N2894AC1 Abstract: LE17 MIL-PRF19500 QR217 marking l3d sot23 Text: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available	Original	2N2894AC1 -200mA 360mW 2N2894AC1B 2N2894AC1 LE17 MIL-PRF19500 QR217 marking l3d sot23	PDF
transistor BUJ100 Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit Text: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V	Original	BUJ100 transistor BUJ100 cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor cfl circuit	PDF
13003D Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DE 13003DE 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 1300at QW-R223-013 13003D	PDF

Privacy Settings

BIPOLAR SWITCHING TRANSISTOR VCBO Search Results

BIPOLAR SWITCHING TRANSISTOR VCBO Result Highlights (5)

BIPOLAR SWITCHING TRANSISTOR VCBO Datasheets Context Search

UN1518

UN1518

Untitled

UN1518

MJE13007D

Untitled

Untitled

Untitled

2N4209

MJE13007G

Untitled

MJE13007-M

Untitled

MJE13007G

Untitled

Untitled

T350 sot223

transistor mje13007 equivalent

D4124PL

NPN Transistor 50A 400V

Untitled

2N2894AC1

transistor BUJ100

13003D