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    BIPOLAR TRANSISTOR BARE DIE Search Results

    BIPOLAR TRANSISTOR BARE DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR TRANSISTOR BARE DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA05110-DIE

    Abstract: FE55-0005
    Text: L-Band Voltage Controlled Oscillator 1.435 - 1.525 GHz Preliminary MA05110-DIE V 1P.00 Features • • • • • • OUTLINE DRAWING Single supply 3 volt operation High Power Output: 10 dBm into 50 ohms Integrated Varactor 10 dB buffer amplifier Low Phase Noise due to InGaP HBT process


    Original     		PDF MA05110-DIE MA05110-DIE FE55-0005

    FE55-0005

    Abstract: MA05130-DIE
    Text: S-Band Voltage Controlled Oscillator 2.2 - 2.4 GHz V 1P.00 MA05130-DIE Preliminary Features • • • • • • OUTLINE DRAWING Single supply 3 volt operation High Power Output: 10 dBm into 50 ohms Integrated Varactor 10 dB buffer amplifier Low Phase Noise due to InGaP HBT process


    Original     		PDF MA05130-DIE MA05130-DIE FE55-0005

    n06hd

    Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220
    Text: TND310 ON Semiconductor Device Nomenclature Prepared by: Steve West ON Semiconductor http://onsemi.com REFERENCE MANUAL Whenever possible, ON Semiconductor uses the following numbering systems in the naming of their products. The ESD/TVS, small signal diode and transistor, and


    Original     		PDF TND310 TND310/D n06hd N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220

    Transistor C 1279

    Abstract: 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter
    Text: LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Product Description The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. Low phase noise oscillators up to 16 GHz VCO’s, DRO’s and YIG oscillators


    Original     		PDF LPT16ED LPT16ED 16GHz. OC-192 OC-768 38-DST-01 Transistor C 1279 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter

    ATC520L103KT16T

    Abstract: MARKING HBT GSA612-12
    Text: GSA612-12 InGaP HBT Gain Block Product Features ● DC to 12GHz ● +12 dBm P-1dB at 2GHz ● +27 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 5.5 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die


    Original     		PDF GSA612-12 12GHz GSA612-12 12GHz ATC520L103KT16T MARKING HBT

    ATC520L103KT16T

    Abstract: Amplifier SOT-89 c4 GSA804-89 s parameters 4ghz ATC520L103KT16
    Text: GSA804-89 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● SOT-89 Lead–Free/green package ● Available as bare die


    Original     		PDF GSA804-89 OT-89 GSA804-89 ATC520L103KT16T Amplifier SOT-89 c4 s parameters 4ghz ATC520L103KT16

    GSA804-12

    Abstract: s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16
    Text: GSA804-12 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● 0805 Lead–Free/green package ● Available as bare die


    Original     		PDF GSA804-12 GSA804-12 s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16

    GSA603-12

    Abstract: GSA-603-12 gsa603
    Text: GSA603-12 InGaP HBT Gain Block Product Features ● DC to 3.5GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 18 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die


    Original     		PDF GSA603-12 GSA603-12 GSA-603-12 gsa603

    Untitled

    Abstract: No abstract text available
    Text: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride Si3N4 films deposited using plasma-enhanced


    Original     		PDF 300oC,

    ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

    Abstract: No abstract text available
    Text: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have


    Original     		PDF 01AC09 ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

    Infineon technology roadmap for mosfet

    Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
    Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.


    Original     		PDF B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor

    ATC520L103KT16T

    Abstract: bipolar transistor ghz s-parameter GSA-603 RF Transistor s-parameter GSA603-00 Transistor s-parameter at 2GHz bipolar transistor s-parameter RF Transistor s-parameter at 4GHz 4ghz s parameters transistor BCS-802JLC
    Text: GSA603-00 InGaP HBT Gain Block DIE Product Features Product Description ● 0.01MHz to 4 GHz The GSA603-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 0.01MHz to 4GHz frequency range with 18dB nominal gain at 2GHz. ● +16 dBm P-1dB at 2GHz


    Original     		PDF GSA603-00 01MHz GSA603-00 100um ATC520L103KT16T bipolar transistor ghz s-parameter GSA-603 RF Transistor s-parameter Transistor s-parameter at 2GHz bipolar transistor s-parameter RF Transistor s-parameter at 4GHz 4ghz s parameters transistor BCS-802JLC

    ATC520L103KT16

    Abstract: GSA606 ATC520L103KT16T GSA606-00 bipolar transistor ghz s-parameter
    Text: GSA606-00 InGaP HBT Gain Block DIE Product Features Product Description ● 0.01 to 7GHz The GSA606-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 0.01MHz to 6GHz frequency range with 15dB nominal gain at 2GHz. ● +15.7dBm P-1dB at 2GHz


    Original     		PDF GSA606-00 GSA606-00 01MHz 28dBm 100UM ATC520L103KT16 GSA606 ATC520L103KT16T bipolar transistor ghz s-parameter

    RF TRANSISTOR 2GHZ

    Abstract: ATC520L103KT16T RF Transistor s-parameter
    Text: GSA804-00 InGaP HBT Gain Block DIE Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω Product Description The GSA804-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that


    Original     		PDF GSA804-00 GSA804-00 140UM. 100um RF TRANSISTOR 2GHZ ATC520L103KT16T RF Transistor s-parameter

    ATC520L103KT16T

    Abstract: ATC520L103KT16 HBT transistor RF TRANSISTOR 2GHZ BIPOLAR TRANSISTOR BARE die bipolar transistor ghz s-parameter
    Text: GSA612-00 InGaP HBT Gain Block DIE Product Features Product Description ● 0.01 MHz to 12GHz The GSA612-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 0.01MHz to 12GHz frequency range with 12dB nominal gain at 2GHz. ● +12 dBm P-1dB at 2GHz


    Original     		PDF GSA612-00 12GHz GSA612-00 01MHz 12GHz 100UM ATC520L103KT16T ATC520L103KT16 HBT transistor RF TRANSISTOR 2GHZ BIPOLAR TRANSISTOR BARE die bipolar transistor ghz s-parameter

    Untitled

    Abstract: No abstract text available
    Text: General Cable’s broad line of VFD Industrial Cable solutions is tested and certified on both a regional and global level. In addition to the cable constructions below, we are designing, engineering and manufacturing custom cables to meet unique requirements every day.


    Original     		PDF

    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet
    Text: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


    Original     		PDF

    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT with i-v characteristics BJT Gate Drive circuit BJT with V-I characteristics TRANSISTORS BJT with low gate voltage Low Capacitance bjt
    Text: Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


    Original     		PDF

    AD544LH

    Abstract: ad542jh AD542 bifet Wien Bridge Oscillator jfet AD547 uv flame sensor AD544 AD642 AD644
    Text: a FEATURES Ultralow Drift: 1 ␮V/؇C AD547L Low Offset Voltage: 0.25 mV (AD547L) Low Input Bias Currents: 25 pA max Low Quiescent Current: 1.5 mA Low Noise: 2 ␮V p-p High Open Loop Gain: 110 dB High Slew Rate: 13 V/␮s Fast Settling to ؎0.01%: 3 ␮s


    Original     		PDF AD547L) MIL-STD-883B AD642, AD644, AD647 AD542/AD544/AD547 H-08A) C826c AD544LH ad542jh AD542 bifet Wien Bridge Oscillator jfet AD547 uv flame sensor AD544 AD642 AD644

    AD544

    Abstract: AD547 Wien Bridge Oscillator jfet Wien Bridge Oscillator jfet circuit uv flame sensor AD542 AD642 AD644 AD647 AD7541
    Text: a High Performance, BiFET Operational Amplifiers AD542/AD544/AD547 FEATURES Ultralow Drift: 1 ␮V/؇C AD547L Low Offset Voltage: 0.25 mV (AD547L) Low Input Bias Currents: 25 pA max Low Quiescent Current: 1.5 mA Low Noise: 2 ␮V p-p High Open Loop Gain: 110 dB


    Original     		PDF AD542/AD544/AD547 AD547L) MIL-STD-883B AD642, AD644, AD647 H-08A) C826c AD544 AD547 Wien Bridge Oscillator jfet Wien Bridge Oscillator jfet circuit uv flame sensor AD542 AD642 AD644 AD647 AD7541

    philips rf manual

    Abstract: jedec JESD625-a Philips varicap tef6860 TEF6860HL philips catv 860 amplifier ic small signal transistor philips manual rf push pull mosfet power amplifier TEA5767 TEF6901H
    Text: RF 매뉴얼 6차 개정 RF 제품에 대한 애플리케이션 및 디자인 매뉴얼 2005년 5월 Henk Roelofs 부사장 겸 사업부장 RF 제품부 개 요 본 RF 매뉴얼은 RF 시스템에 대한 광범위한 각종 자료와 다양한 측면을 망라하였습니다. 본 문서에서는 RF 소 小 신호 개별 부품 (Small signal


    Original     		PDF

    AN-1084

    Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
    Text: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5


    Original     		PDF AN-1084 AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMDJ3N03BJT/D SEMICONDUCTOR TECHNICAL DATA P lastic Power Transistors M M DJ3N03BJT SO-8 for Surface Mount Applications M otorola Preferred Device • Collector -Emitter Sustaining Voltage — V c e O s u s = 30 Vdc (Min) @ lc = 10 mAdc


    OCR Scan     		PDF MMDJ3N03BJT/D DJ3N03BJT

    AD705

    Abstract: a07-06 AD704SE ad706 AD704KN
    Text: ANALOG DEVICES □ FEATURES HIGH DC PRECISION Low Offset V oltage 75 nV max: AD704 (35 11V max: AD705) (50 nV max: AD706) Low O ffset D rift (1.0 n V /°C max: AD704) (0.6 n V /°C max: AD705) (0.6 (iV /°C max: AD706) Low Input Bias Currents (150 pA max: AD704)


    OCR Scan     		PDF AD704/AD705/AD706 AD704) AD705) AD706) AD705 a07-06 AD704SE ad706 AD704KN