Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BJE 80 DIODE Search Results

    BJE 80 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    BJE 80 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FF300R12KE4

    Abstract: No abstract text available
    Text: Technische Information / technical information FF300R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode 62mm C-series module with trench/fieldstop IGBT4 and optimized EmCon Diode IGBT-Wechselrichter / IGBT-inverter


    Original     		PDF FF300R12KE4 FF300R12KE4

    FF200R12KS4

    Abstract: 9 BJE
    Text: Technische Information / technical information FF200R12KS4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit schnellem IGBT2 für hochfrequentes Schalten 62mm C-series module with the fast IGBT2 for high-frequency switching IGBT-Wechselrichter / IGBT-inverter


    Original     		PDF FF200R12KS4 FF200R12KS4 9 BJE

    DIODE BJE deutsch

    Abstract: smd transistor AJp 65 BJE deutsch CLC420 CLC420ALC CLC420AMC DIODE BJE 80
    Text: N CLC420 High-Speed, Voltage Feedback Op Amp General Description Features • ■ ■ ■ ■ ■ ■ ■ 300MHz small signal bandwidth 1100V/µs slew rate Unity-gain stability Low distortion, -60dBc at 20MHz 0.01% settling in 18ns CLC420B: 0.5mV input offset voltage,


    Original     		PDF CLC420 300MHz -60dBc 20MHz CLC420B: CLC420AJP/BJP CLC420AJE/BJE CLC420ALC CLC420AMC DIODE BJE deutsch smd transistor AJp 65 BJE deutsch CLC420 CLC420ALC CLC420AMC DIODE BJE 80

    DIODE BJE smd

    Abstract: DIODE BJE deutsch BJE deutsch CLC420 CLC420ALC CLC420AMC smd transistor 1kw smd transistor AJp 65
    Text: N CLC420 High-Speed, Voltage Feedback Op Amp General Description Features • ■ ■ ■ ■ ■ ■ ■ 300MHz small signal bandwidth 1100V/ms slew rate Unity-gain stability Low distortion, -60dBc at 20MHz 0.01% settling in 18ns CLC420B: 0.5mV input offset voltage,


    Original     		PDF CLC420 300MHz 100V/ms -60dBc 20MHz CLC420B: CLC420AJP/BJP CLC420AJE/BJE CLC420ALC DIODE BJE smd DIODE BJE deutsch BJE deutsch CLC420 CLC420ALC CLC420AMC smd transistor 1kw smd transistor AJp 65

    R1560P2

    Abstract: No abstract text available
    Text: ISL9R1560P2 Data Sheet Title L9 560 bje A, 0V alth ode) utho eyw s tersi File Number 4913.2 15A, 600V Stealth Diode Features The ISL9R1560P2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current


    Original     		PDF ISL9R1560P2 ISL9R1560P2 R1560P2

    BJE 80 diode

    Abstract: DIODE BJE DIODE BJE deutsch BJE deutsch DIODE BJE smd CLC420 CLC420ALC CLC420AMC DIODE BJE 80
    Text: N Comlinear CLC420 High-Speed, Voltage Feedback Op Amp General Description Features • ■ ■ ■ ■ ■ ■ ■ 300MHz small signal bandwidth 1100V/µs slew rate Unity-gain stability Low distortion, -60dBc at 20MHz 0.01% settling in 18ns CLC420B: 0.5mV input offset voltage,


    Original     		PDF CLC420 300MHz -60dBc 20MHz CLC420B: CLC420AJP/BJP CLC420AJE/BJE CLC420ALC CLC420AMC BJE 80 diode DIODE BJE DIODE BJE deutsch BJE deutsch DIODE BJE smd CLC420 CLC420ALC CLC420AMC DIODE BJE 80

    marking code BEV

    Abstract: GEZ DIODES SMCJ GFR marking code GGt 200V 1500W DO-214AB SMCJ16CA BEP bhv option bem SMCJ
    Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ series RoHS Pb Description The SMCJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


    Original     		PDF 1000s DO-214AB 16mm/13" RS-481 marking code BEV GEZ DIODES SMCJ GFR marking code GGt 200V 1500W DO-214AB SMCJ16CA BEP bhv option bem SMCJ

    SMCJ

    Abstract: No abstract text available
    Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ series RoHS Pb Description The SMCJ series is designed speciically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


    Original     		PDF E230531 DO-214AB 16mm/13â RS-481 SMCJ

    SMCJ GFR

    Abstract: gez 3c smcj bfk BJE 247 447 gev GEZ DIODES SMCJ bem marking bgp GFM 57, TVS SMCJ13A
    Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ series SMCJ Series Description The SMCJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


    Original     		PDF E230531 10x1000s DO-214AB RS-481 SMCJ GFR gez 3c smcj bfk BJE 247 447 gev GEZ DIODES SMCJ bem marking bgp GFM 57, TVS SMCJ13A

    Untitled

    Abstract: No abstract text available
    Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ series SMCJ Series RoHS Description Uni-directional Bi-directional The SMCJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


    Original     		PDF E230531 DO-214AB 16mm/13â RS-481

    Untitled

    Abstract: No abstract text available
    Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ series SMCJ Series RoHS Description Uni-directional Bi-directional The SMCJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


    Original     		PDF E230531 DO-214AB 16mm/13â RS-481

    GFM 57, TVS

    Abstract: GFM TVS SMC GFM, TVS SMCJ GFR GHR TVS marking BGG tvs gez 3c GDE TVS GEK DIODES TVS gek
    Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ series SMCJ Series Description Uni-directional Bi-directional The SMCJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


    Original     		PDF 1000s JESD201A DO-214AB 16mm/13" RS-481 GFM 57, TVS GFM TVS SMC GFM, TVS SMCJ GFR GHR TVS marking BGG tvs gez 3c GDE TVS GEK DIODES TVS gek

    GFM 13A

    Abstract: No abstract text available
    Text: Transient Voltage Suppression Diodes TVS Surface Mount > SMCJ Series 5.0 TO 440V 1500W RoHS SMCJ Series Uni-directional Description Bi-directional The SMCJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient


    Original     		PDF DO-214AB 16mm/13â RS-481 GFM 13A

    SMD marking code GEM

    Abstract: bdl 494 BFE smd diode GHM SMD BHW MARKING CODE smd marking BHp 938 GFM smd code marking 777 BEV smd MARKING smd marking ggd
    Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-G Thru. TV15C441-G Working Peak Reverse Voltage: 5.0 - 440 Volts Power Dissipation: 1500Watts RoHS Device Features -Ideally for surface mount applications. SMC/DO-214AB -Easy pick and place. -Plastic package has Underwriters Lab.


    Original     		PDF TV15C5V0-G TV15C441-G 1500Watts SMC/DO-214AB DO-214AB TV15B301J TV15B351J TV15B401J TV15B441J QW-BTV03 SMD marking code GEM bdl 494 BFE smd diode GHM SMD BHW MARKING CODE smd marking BHp 938 GFM smd code marking 777 BEV smd MARKING smd marking ggd

    BHN* marking smc

    Abstract: No abstract text available
    Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-HF Thru. TV15C441-HF Working Peak Reverse Voltage: 5.0 - 440 Volts Power Dissipation: 1500Watts RoHS Device Halogen free Features -Glass passivated chip. -1500 W peak pulse power capability with a


    Original     		PDF TV15C5V0-HF TV15C441-HF 1500Watts SMC/DO-214AB DO-214AB/SMC QW-JTV05 DO-214AB DO-214AB BHN* marking smc

    SMD marking code GEM

    Abstract: bfm smd code marking BEV smd MARKING bdp 286 SMD marking code bfk SMD BHD D2 BFW 100A smd marking BJk BHD D2 SMD DEVICE smd marking BFX
    Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-G Thru. TV15C441-G Working Peak Reverse Voltage: 5.0 - 440 Volts Power Dissipation: 1500Watts RoHS Device Features -Ideally for surface mount applications. SMC/DO-214AB -Easy pick and place. 0.280 7.02


    Original     		PDF TV15C5V0-G TV15C441-G 1500Watts SMC/DO-214AB DO-214AB MIL-STD-750, Cathode00 QW-BTV03 DO-214AB SMD marking code GEM bfm smd code marking BEV smd MARKING bdp 286 SMD marking code bfk SMD BHD D2 BFW 100A smd marking BJk BHD D2 SMD DEVICE smd marking BFX

    Untitled

    Abstract: No abstract text available
    Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15C5V0-G Thru. TV15C441-G Working Peak Reverse Voltage: 5.0 - 440 Volts Power Dissipation: 1500Watts RoHS Device Features -Glass passivated chip. -1500 W peak pulse power capability with a 10/1000µs waveform, repetitive rate


    Original     		PDF TV15C5V0-G TV15C441-G 1500Watts SMC/DO-214AB DO-214AB/SMC MIL-STD-750, QW-BTV03 DO-214AB DO-214AB

    BZG03

    Abstract: BZG03-C10 BZG03-C270 C100 C110 C120 bzg03c10
    Text: N AUER PHILIPS/DISCRETE b TE D • bbSB^l 0027070 Philips Sem icon du ctors b7b M A P X Product specification Voltage regulator diodes D E S C R IP T IO N BZG03 series Q U IC K R E F E R E N C E DATA H igh relia bility glass-passivated d iode s in a sm all recta n g u la r SM D


    OCR Scan     		PDF BZG03 DO-214AC BZG03-C10 BZG03-C270 C100 C110 C120 bzg03c10

    2SK2651-01MR

    Abstract: No abstract text available
    Text: F U JI 2SK2651-01MR SUJM FAP-IIS Series s l TL^U G N-channel MOS-FET 900V 2,5 0 . 6A 50W Min. Typ. Max. Unit V V PA mA > Features - High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V G uarantee Repetitive A valanche Rated


    OCR Scan     		PDF 2SK2651-01MR 0004b77

    Untitled

    Abstract: No abstract text available
    Text: @ . OPTEK Product Bulletin OPB712 June 1996 Reflective Object Sensor Type OPB712 Features Absolute Maximum R atings Ta = 25° C unless otherwise noted • Photodarlington output • Unfocused for sensing diffuse surface • Low cost plastic housing Storage and Operating Temperature. -40° C to +85° C


    OCR Scan     		PDF OPB712

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON L2726 M c M IlJ Û T O iO ( g S LOW DROP DUAL POW ER OPERATIO NAL AM PLIFIER AD VANC E DATA • ■ ■ ■ ■ ■ ■ ■ ■ OUTPUT CURRENT TO 1A OPERATES AT LOW VOLTAGES SINGLE OR SPLIT SUPPLY LARGE CO M M ON-MODE AND DIFFERENTIAL MODE RANGE


    OCR Scan     		PDF L2726 SO-20 L2726

    MG100Q2YS11

    Abstract: 2-109B4A MG100Q2YS1
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT S S High Power Switching Applications 4 - FAST-ON -TAB + 1 1 0 Motor Control Applications Features • H igh input im p e d a n c e • H igh s p e e d : t f = 1 .Ons M a x .


    OCR Scan     		PDF MG100Q2YS11 D0220n PW03890796 MG100Q2YS11 2-109B4A MG100Q2YS1

    MG50Q2YS91

    Abstract: 9t2 transistor ic 7800 MG50Q2YS9 PW03840796
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG50Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1 .O^is Max. V = 0.5ns (Max.)


    OCR Scan     		PDF MG50Q2YS91 PW03840796 MG50Q2YS91 9t2 transistor ic 7800 MG50Q2YS9

    gunn diode radar module

    Abstract: Gunn Diode e band
    Text: MITEL AC2001 Millimeter Wave gunn Oscillator Module S E M IC O N D U C T O R DS5074 Issue 2.0 March 1999 Features • • • • High output power Low phase noise performance Frequency stability with temperature Frequency agility Applications • • •


    OCR Scan     		PDF AC2001 DS5074 gunn diode radar module Gunn Diode e band