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BUZ14 Abstract: D1267 D0145 transistor buz L11F Text: BUZ14 PowerMOS transistor N A 1ER PHILIPS/DISCRETE ObE D btiSBTBl D0mS77 4 T-51 H3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	BUZ14 D0mS77 T-51-13 BJJZ14 bbS3T31 BUZ14 D1267 D0145 transistor buz L11F

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Abstract: D1267 D0145 transistor buz L11F
Text: BUZ14 PowerMOS transistor N A 1ER PHILIPS/DISCRETE ObE D btiSBTBl D0mS77 4 T-51 H3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

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BUZ14 D0mS77 T-51-13 BJJZ14 bbS3T31 BUZ14 D1267 D0145 transistor buz L11F