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    BJT 2N2222 DC CURRENT GAIN Search Results

    BJT 2N2222 DC CURRENT GAIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    BJT 2N2222 DC CURRENT GAIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode 0A70

    Abstract: GA05JT01-46
    Text: GA05JT01-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		PDF GA05JT01-46 GA05JT01 8338E-48 0733E-26 16E-10 021E-10 050E-2 diode 0A70 GA05JT01-46

    BJT 2222

    Abstract: npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 driver circuit Si321x 2N2222 bjt IBJT W6 13A Diode PC40EF12 IRLL014N equivalent
    Text: AN45 DESIGN GUIDE Si3210/15/16 DC-DC CONVERTER FOR THE Introduction The ProSLIC from Silicon Laboratories integrates a complete analog telephone interface into one low-voltage CMOS device and offers extensive software programmability to meet many global telephony


    Original     		PDF Si3210/15/16 Si321x BJT 2222 npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 driver circuit 2N2222 bjt IBJT W6 13A Diode PC40EF12 IRLL014N equivalent

    BJT 2222

    Abstract: npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 SDCL bjt 2n2222 driver circuit transistor BJT 2N2222 W6 13A Diode IRLL014N SMALL low frequency transformer
    Text: AN45 D E S I G N G U ID E Si3210/15/16 DC-DC CONVERTER FOR THE 1. Introduction The ProSLIC from Silicon Laboratories integrates a complete analog telephone interface into one low-voltage CMOS device and offers extensive software programmability to meet many global telephony


    Original     		PDF Si3210/15/16 Si321x BJT 2222 npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 SDCL bjt 2n2222 driver circuit transistor BJT 2N2222 W6 13A Diode IRLL014N SMALL low frequency transformer

    Untitled

    Abstract: No abstract text available
    Text: GA05JT03-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		PDF GA05JT03-46 GA05JT03 8338E-48 0733E-26 16E-10 021E-10 050E-2

    Untitled

    Abstract: No abstract text available
    Text: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		PDF 2N7636-GA 2N7636 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7636-GA

    Untitled

    Abstract: No abstract text available
    Text: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		PDF 2N7638-GA 2N7638 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7638-GA

    2n2222 spice model

    Abstract: No abstract text available
    Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		PDF 2N7637-GA 2N7637 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7637-GA 2n2222 spice model

    Untitled

    Abstract: No abstract text available
    Text: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original     		PDF 2N7635-GA 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA

    ECG transistor replacement guide book free

    Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
    Text: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a


    Original     		PDF UG-309 UG-201 UG-349 UG-1034 UG-146 UG-83 UG-318 UG-273 UG-255 ECG transistor replacement guide book free ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673

    Untitled

    Abstract: No abstract text available
    Text: GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features •         VDS = 600 V RDS ON = 25 mΩ ID (Tc = 25°C) = 100 A hFE (Tc = 25°C) = 105 Package 225°C maximum operating temperature Gate Oxide Free SiC Switch


    Original     		PDF GA50JT06-258 O-258 GA50JT06 00E-47 26E-26 3989E-9 026E-09 00E-3

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		PDF 2N7639-GA 2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9 20E-03

    Untitled

    Abstract: No abstract text available
    Text: 2N7640-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch


    Original     		PDF 2N7640-GA 2N7640 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 2N7640-GA

    npn bjt 2N2222

    Abstract: bjt 2n2222 BJT 2N2222 datasheet Si2302 SI2302 A2 circuits using BJT 2N2222 2N2222 NPN Transistor features bjt 2n2222 driver circuit TC650AEVUA TC651
    Text: TC650 Fan Control Demo Board User’s Guide  2002 Microchip Technology Inc. DS51304A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


    Original     		PDF TC650 DS51304A D-85737 DS51304A-page npn bjt 2N2222 bjt 2n2222 BJT 2N2222 datasheet Si2302 SI2302 A2 circuits using BJT 2N2222 2N2222 NPN Transistor features bjt 2n2222 driver circuit TC650AEVUA TC651

    BJT 2N2222 datasheet

    Abstract: lmv324n LMV741 bjt 2n2222 IRF7105N HMC1001 HMC2003 circuits using BJT 2N2222 HMC100X HMC102x
    Text: 1- and 2-Axis Magnetic Sensors HMC1001/1002/1021/1022 The Honeywell HMC100x and HMC102x magnetic sensors are one and two-axis surface mount sensors designed for low field magnetic sensing. By adding supporting signal processing, cost effective magnetometers or compassing


    Original     		PDF HMC1001/1002/1021/1022 HMC100x HMC102x HMC100x HMC102x BJT 2N2222 datasheet lmv324n LMV741 bjt 2n2222 IRF7105N HMC1001 HMC2003 circuits using BJT 2N2222

    Si3201-gs

    Abstract: transistor SMD 3906
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R I N G I N G / B A T T E R Y VO L TAG E G ENERATION Features Performs all BORSCHT functions Software-programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		PDF Si3210) Hz/16 Si3201-gs transistor SMD 3906

    transistor dtx 360 mosfet

    Abstract: transistor dtx 360 SI3210-E-FM TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE r28 marking codes transistors sot-223 ON SEMI transistor smd marking codes c9 zetex zetex transistor to92 MARKING SMD PNP TRANSISTOR Y2 bjt 2n2222 fairchild
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features      Applications    Programmable audio processing DTMF encoding and decoding 12 kHz/16 kHz pulse metering


    Original     		PDF Hz/16 GR-909 transistor dtx 360 mosfet transistor dtx 360 SI3210-E-FM TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE r28 marking codes transistors sot-223 ON SEMI transistor smd marking codes c9 zetex zetex transistor to92 MARKING SMD PNP TRANSISTOR Y2 bjt 2n2222 fairchild

    SI3201-FS

    Abstract: transistor 2Fn CTX01-15275 si3210-ft R1041 SI3210-E-FM si3210 bjt 2n2222 fairchild smd transistor 805 239 transistor equivalent 2n5551
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features   Performs all BORSCHT functions  Software-programmable signal generation and audio processing Software-programmable internal balanced


    Original     		PDF Hz/16 Si3210) 16-bit SI3201-FS transistor 2Fn CTX01-15275 si3210-ft R1041 SI3210-E-FM si3210 bjt 2n2222 fairchild smd transistor 805 239 transistor equivalent 2n5551

    Si3201-gs

    Abstract: dtmf fsk caller id D 1380 Transistor HC3110 ST 2n2222
    Text: S i 3 2 1 0 / S i 3 2 11 P R O SLIC P R O G R A M M A B L E CMOS SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Performs all BORSCHT functions Software-programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		PDF Si3210) Hz/16 Si3201-gs dtmf fsk caller id D 1380 Transistor HC3110 ST 2n2222

    SE 7889

    Abstract: Si3201-KS AN3272 SI3201-FS SI3216-FT Si3216 SI3211 Si321x sot23 mark code KS GR-909
    Text: Si3216 P RO SLIC P R O GRA MM A B LE W IDEBAND SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features     Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio


    Original     		PDF Si3216 16-bit SE 7889 Si3201-KS AN3272 SI3201-FS SI3216-FT Si3216 SI3211 Si321x sot23 mark code KS GR-909

    SI3216-FT

    Abstract: 5551 transistor Si3216
    Text: Si3216 P R O SLIC P R O G R A M M A B L E W I D E B A N D SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y V O L TA G E G E N E R A T I O N Features „ „ „ „ Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio


    Original     		PDF Si3216 16-bit SI3216-FT 5551 transistor Si3216

    sot-23 marking code 2fn

    Abstract: transistor dtx 360 mosfet TRANSISTOR SMD MARKING CODE r28 SMD SOT23 transistor MARK Y2 transistor 2Fn transistor smd marking codes c9 zetex marking code R51 SMD Transistor transistor dtx 360 transistor equivalent 2n5551 MLT 22 MOSFET AUDIO AMPLIFIER
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features      Applications    Programmable audio processing DTMF encoding and decoding 12 kHz/16 kHz pulse metering


    Original     		PDF Si3210) 90VPK sot-23 marking code 2fn transistor dtx 360 mosfet TRANSISTOR SMD MARKING CODE r28 SMD SOT23 transistor MARK Y2 transistor 2Fn transistor smd marking codes c9 zetex marking code R51 SMD Transistor transistor dtx 360 transistor equivalent 2n5551 MLT 22 MOSFET AUDIO AMPLIFIER

    power BJT tip 122

    Abstract: Si3201-KS transistor equivalent 2n5551 CTX01-15 coiltronic SI3210M-FM 31353R-02 SI3201-FS si3210-ft SI3210FT
    Text: S i 3 2 1 0 / S i 3 2 11 P R O SLIC P R O G R A M M A B L E CMOS SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Performs all BORSCHT functions Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		PDF Si3210) Hz/16 16-bit power BJT tip 122 Si3201-KS transistor equivalent 2n5551 CTX01-15 coiltronic SI3210M-FM 31353R-02 SI3201-FS si3210-ft SI3210FT

    schematic motor control uc3842

    Abstract: transistor BJT 2N2222 uc3842 motor driver circuit Switching Power Supply Schematic Diagram uc3842 STHI20N50 uc3842 step down drive motor 10A with transistor P channel MOSFET 2N2222 bjt BJT 2N2222 dc current gain 300V dc dc STEP DOWN
    Text: f Z J SGS-THOMSON * J § „ BÌODIBS IILi inS®HDÈi TECHNICAL NOTE AN ECONOMIC MOTOR DRIVE WITH VERY FEW COMPONENTS INTRODUCTION The main objectives of this design are the econo­ my and circuit simplicity which enable costs to be reduced to a minimum. For this reason the design


    OCR Scan     		PDF STHI10N50 schematic motor control uc3842 transistor BJT 2N2222 uc3842 motor driver circuit Switching Power Supply Schematic Diagram uc3842 STHI20N50 uc3842 step down drive motor 10A with transistor P channel MOSFET 2N2222 bjt BJT 2N2222 dc current gain 300V dc dc STEP DOWN

    schematic motor control uc3842

    Abstract: STHI20N50 Switching Power Supply Schematic Diagram uc3842 uc3842 power factor uc3842 motor driver circuit transistor BJT 2N2222 bjt 2n2222 driver circuit uc3842 step down BJT 2N2222 dc current gain snubber circuit for mosfet
    Text: 7 S G S T H O M S O N Mm [i^ 0 ^ @ [l[L [l § ir ^ © [^ ]0 © S TECHNICAL NOTE AN ECONOMIC MOTOR DRIVE WITH VERY FEW COMPONENTS INTRODUCTION The main objectives of this design are the econo­ my and circuit simplicity which enable costs to be reduced to a minimum. For this reason the design


    OCR Scan     		PDF STHI10N50 schematic motor control uc3842 STHI20N50 Switching Power Supply Schematic Diagram uc3842 uc3842 power factor uc3842 motor driver circuit transistor BJT 2N2222 bjt 2n2222 driver circuit uc3842 step down BJT 2N2222 dc current gain snubber circuit for mosfet