2N3904
Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
2N3904
LM96163C
LM96163CISD
LM96163CISDX
QFN10
RLs6
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RTU620
Abstract: No abstract text available
Text: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta
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LM96163
LM96163
SNAS433C
RTU620
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
2N3904,
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bjt specifications
Abstract: TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor
Text: Power BJT Specification for RDFC Applications Application Note AN-2276 RDFC Circuit Description ABSTRACT This application note provides key parametric requirements of power BJTs suitable for Resonant Discontinuous Forward Converter RDFC applications. As the main power switch, the BJT
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AN-2276
AN-2276-0904
07-Apr-2009
bjt specifications
TRANSISTORS BJT list
DG-2128
DG2128
POWER BJTs
common base bjt
DS-1639
CAMSEMI
common emitter bjt
TRANSISTOR REPLACEMENT table for transistor
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Untitled
Abstract: No abstract text available
Text: C2173 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation • Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost
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C2173
C2173
OT23-6
DS-5706-1403
03-Mar-2014
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C2171
Abstract: No abstract text available
Text: C2171/2 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost design
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C2171/2
C2171/2PX2
OT23-6
DS-5175-1406
3-Jun-2014
C2171
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PWM Controller For BJT
Abstract: power transistor bjt 1000 a transistor marking CS
Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the
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AP3720
20kHz
AP3720
PWM Controller For BJT
power transistor bjt 1000 a
transistor marking CS
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the
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AP3720
20kHz
AP3720
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710 opto coupler
Abstract: 3720M-G1 power BJT 710 opto COUNTER LED bcd transistor marking CS bjt specifications Transistor BJT High Current AP3720 bjt high voltage
Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the
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AP3720
20kHz
AP3720
710 opto coupler
3720M-G1
power BJT
710 opto
COUNTER LED bcd
transistor marking CS
bjt specifications
Transistor BJT High Current
bjt high voltage
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Untitled
Abstract: No abstract text available
Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications
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BCP5316Q
OT223
-500mV
BCP5616Q
DS36980
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Untitled
Abstract: No abstract text available
Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications
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BCP5616Q
OT223
500mV
BCP5316Q
DS36981
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Untitled
Abstract: No abstract text available
Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •
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BCP5316Q
OT223
-500mV
BCP5616Q
DS36980
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FMMT634Q
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FMMT634Q
900mA
625mW
FMMT734Q
AEC-Q101
DS37051
FMMT634Q
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Drive Base BJT
Abstract: Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576
Text: Testing Key Parameters of High Voltage BJTs for RDFC Applications Application Note AN-2576 INTRODUCTION Certain primary switch BJT parameters are particularly important for correct operation and longterm reliability of RDFC designs. : • Current gain hFE
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AN-2576
AN-2337
AN-2576-0809A
25-Sep-2008
Drive Base BJT
Low Capacitance bjt
Transistor BJT High Current
bjt specifications
bjt high voltage
Cambridge capacitor capacitors
power BJT
TRANSISTORS BJT list
AN-2337
AN2576
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FZT751Q
OT223
-300mV
FZT651Q
AEC-Q101
DS36963
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23
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FMMT591Q
J-STD-020
DS37010
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •
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FZT651Q
OT223
J-STD-020
300mV
MIL-STD-202,
DS36917
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23
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FMMT491Q
J-STD-020
MIL-STD-202,
DS37009
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT459Q 500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Feature
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FMMT459Q
150mA
500mA
625mW
-90mV
120mA
AEC-Q101
DS37019
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Half BRIDGE driver for bjt
Abstract: No abstract text available
Text: L6520 L6521 Highly integrated ballast controller for TL and CFL Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation ■
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L6520
L6521
L6521TR
L6520TR
Half BRIDGE driver for bjt
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L6521
Abstract: L6520 SELF OSCILLATING HALF BRIDGE DRIVER IC
Text: L6520 L6521 Highly integrated ballast controller for TL and CFL Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation ■
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L6520
L6521
L6520TR
L6521TR
L6521
L6520
SELF OSCILLATING HALF BRIDGE DRIVER IC
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Untitled
Abstract: No abstract text available
Text: AP451 2 Channel Linear Controller with Independent Enable Function Features General Description - 2 channel linear control Circuitries - Operating voltage can be up to 18V - Under Voltage Lockout UVLO Protection - Current limit external BJT only - Independent enables function
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AP451
AP451
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Untitled
Abstract: No abstract text available
Text: MJD32CQ 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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MJD32CQ
-100V
MJD31CQ
AEC-Q101
DS37050
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