BJT IC VCE Search Results

BJT IC VCE Result Highlights (5)

Part	Manufacturer	Description
MHM411-21	Murata Manufacturing Co Ltd	Ionizer Module, 100-120VAC-input, Negative Ion
SCL3400-D01-1	Murata Manufacturing Co Ltd	2-axis (XY) digital inclinometer
D1U74T-W-1600-12-HB4AC	Murata Manufacturing Co Ltd	AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs
SCC433T-K03-004	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor
MRMS591P	Murata Manufacturing Co Ltd	Magnetic Sensor

BJT IC VCE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
9435R Abstract: NSB9435T1 NSB9435T1G power BJT PNP Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com • Collector −Emitter Sustaining Voltage − POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc	Original	NSB9435T1 OT-223 NSB9435T1/D 9435R NSB9435T1 NSB9435T1G power BJT PNP	PDF
9435R Abstract: NSB9435T1 Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	NSB9435T1 r14525 NSB9435T1/D 9435R NSB9435T1	PDF
transistor bd 370 Abstract: No abstract text available Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	NSB9435T1 r14525 NSB9435T1/D transistor bd 370	PDF
9435R Abstract: transistor BD 240 Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	NSB9435T1 r14525 NSB9435T1/D 9435R transistor BD 240	PDF
4030p Abstract: No abstract text available Text: NJT4030P Preferred Device Product Preview Bipolar Power Transistors PNP Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc POWER BJT IC = 3.0 AMPERES BVCEO = 40 VOLTS • High DC Current Gain −	Original	NJT4030P OT-223 4030P 4030PG NJT4030P/D	PDF
MMJT9410 Abstract: MMJT9410G Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G	PDF
HP35821E Abstract: BJT TRANSISTOR BJT IC Vce HP35821 common emitter bjt hp358 Text: HP35821E NPN SILICON BJT TRANSISTOR PACKAGE STYLE .200 4L PILL DESCRIPTION: The ASI HP35821E is a Common Emitter Device Designed for Medium Power Class C Applications Operating at VHF,UHF Frequencies. MAXIMUM RATINGS IC 35 mA IC 180 mA MAX VCEO 20 V VCBO	Original	HP35821E HP35821E BJT TRANSISTOR BJT IC Vce HP35821 common emitter bjt hp358	PDF
MMJT9435 Abstract: No abstract text available Text: ON Semiconductort MMJT9435 Bipolar Power Transistors ON Semiconductor Preferred Device PNP Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —	Original	MMJT9435 r14525 MMJT9435/D MMJT9435	PDF
MMJT9410 Abstract: power bjt Text: ON Semiconductort MMJT9410 Bipolar Power Transistors ON Semiconductor Preferred Device NPN Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —	Original	MMJT9410 r14525 MMJT9410/D MMJT9410 power bjt	PDF
Untitled Abstract: No abstract text available Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	MMJT9410 MMJT9410/D	PDF
KSC5502D Abstract: power BJT anti saturation diode KSC5302D KSC5302DI KSC5302DM KSC5305D KSC5338D KSC5402D KSC5402DT KSC5502DT Text: Discrete Power BJT Anti-Saturation Products VCBO V VCEO (V) VEBO (V) IC (A) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) tSTG (us) tF (us) TO-126 NPN Configuration KSC5302DM 800 400 12 2 25 20 - 0.4 - 0.4 2 0.2 TO-220 NPN Configuration KSC5302D	Original	O-126 KSC5302DM O-220 KSC5302D KSC5402DT KSC5502DT KSC5504DT KSC5305D KSC5338D KSC5502D power BJT anti saturation diode KSC5302D KSC5302DI KSC5302DM KSC5305D KSC5338D KSC5402D KSC5402DT KSC5502DT	PDF
BJT BD139 Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003 Text: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1	Original	O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD157 2JD210 BJT BD139 TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003	PDF
BDX548 Abstract: KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692 Text: Discrete Power BJT darlington Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSD985 1.5 60 150 8 10 2000 30000 1 - 1.5 KSD986 1.5 80 150 8 10 2000 30000 1 - 1.5 KSD1692 3 100 150 8	Original	O-126 KSD985 KSD986 KSD1692 BD675A BD677A KSE800 KSE801 MJE800 TIP146 BDX548 KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692	PDF
8 pin ic 9435 Abstract: 9435, ic 9435 transistor 9435a 9435 sot ic 9435 9435 SOT223 marking code 9435 9435 a BD 135 transistor Text: MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features • Pb−Free Packages are Available • Collector −Emitter Sustaining Voltage − • • • • • http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS	Original	MMJT9435 OT-223 8 pin ic 9435 9435, ic 9435 transistor 9435a 9435 sot ic 9435 9435 SOT223 marking code 9435 9435 a BD 135 transistor	PDF

FJL6920 equivalent Abstract: fjaf6812 FJAF6815 FJL6920 equivalent fjaf6810 FJAF6810 equivalents transistor FJL6820 bu508af equivalent equivalent fjaf6812 FJL6820 Text: Discrete Power BJT Horizontal Deflection Products VCBO V VCEO (V) VEBO (V) IC (A) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) tSTG (us) tF (us) TO-264 NPN Configuration FJL6820 1500 750 6 20 200 6 9 11 - 3 3 0.2 FJL6825 1500 750 6 25 200 6 9 12	Original	O-264 FJL6820 FJL6825 FJL6920 BU508AF FJAF6808D FJAF6810 FJAF68 FJL6920 equivalent fjaf6812 FJAF6815 FJL6920 equivalent fjaf6810 FJAF6810 equivalents transistor FJL6820 bu508af equivalent equivalent fjaf6812 FJL6820	PDF
power bjt Abstract: bjt npn npn power BJT KSC5042M power bjt datasheet KSC5042 KSC5042F BJT IC Vce Text: Discrete Power BJT Dynamic Focus Products VCBO V VCEO (V) VEBO (V) IC (A) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC5042M 1500 900 5 0.1 4 30 - 0.01 - 5 900 5 0.1 10 30 - 0.01 - 5 5 0.1 6 30 - 0.01 - 5 TO-220 NPN Configuration	Original	O-126 KSC5042M O-220 KSC5042 O-220F KSC5042F power bjt bjt npn npn power BJT KSC5042M power bjt datasheet KSC5042 KSC5042F BJT IC Vce	PDF
KSC5027 Abstract: power BJT KSC5345 KSE13009 KSE13007 KSE13007 equivalent BUT11 KSA1156 KSC2333 KSC2335 Text: Discrete Power BJT Switch Products VCEO V VCBO (V) VEBO (V) IC (A) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) tSTG (us) tF (us) TO-126 NPN Configuration KSC2752 400 500 7 0.5 10 20 80 0.05 - 1 2.5 1 KSC5026M 800 1100 7 1.5 20 10 40 0.1 - 2 3 0.3	Original	O-126 KSC2752 KSC5026M KSA1156 O-220 KSE13006 KSE13008 KSC2333 KSC5024 KSC5027 power BJT KSC5345 KSE13009 KSE13007 KSE13007 equivalent BUT11 KSA1156 KSC2333 KSC2335	PDF
power bjt Abstract: BJT IC Vce power BJT PNP KSC5200 3p transistor FJA4210 TO-264 FJA4310 KSA1943 KSA3010 Text: Discrete Power BJT Audio and Car Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-264 NPN Configuration KSC5200 13 230 230 5 130 55 160 1 0.4 3 230 230 5 130 55 160 1 0.4 3 TO-264 PNP Configuration KSA1943	Original	O-264 KSC5200 KSA1943 KSC4010 FJA4310 KSA3010 FJA4210 power bjt BJT IC Vce power BJT PNP KSC5200 3p transistor FJA4210 TO-264 FJA4310 KSA1943 KSA3010	PDF
Untitled Abstract: No abstract text available Text: MMJT9410 Bipolar Power Transistors NPN Silicon Features • SOT−223 Surface Mount Packaging • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS	Original	MMJT9410 OT-223 MMJT9410/D	PDF
Untitled Abstract: No abstract text available Text: BCX5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features     BVCEO > 80V Ic = 1A High Continuous Collector Current	Original	BCX5616Q 500mV BCX5316Q AEC-Q101 DS37024	PDF
NJL5165KL Abstract: No abstract text available Text: NJL5165KL Ej r c I # j È ' mm NJL5165KL» , ¡ ^ t t J ^ i O T S S ^ L E D f c ¡ S ! i J f <7 SI 7 a V V7 S C i S a i S I + O T U- > Zittii% 'BJtÉi: L f : ' M 7 i > y ^ i T - f tiB S iC : H t t h U 7 U i ’ ? -T"to m • 2 M t4 .0 m m X 5 .0 m m X 5 .0 m m )	OCR Scan	NJL5165KL NJL5165KLÂ NJL5165KL	PDF
Untitled Abstract: No abstract text available Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	SUM201MN KSD-T6T002-001	PDF
Logic Level Gate Drive mosfet Abstract: BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	SUM201MN KSD-T6T002-000 Logic Level Gate Drive mosfet BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v	PDF
Untitled Abstract: No abstract text available Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated	Original	SUM202MN KSD-T6T001-002	PDF

BJT IC VCE Search Results

BJT IC VCE Result Highlights (5)

BJT IC VCE Datasheets Context Search

9435R

9435R

transistor bd 370

9435R

4030p

MMJT9410

HP35821E

MMJT9435

MMJT9410

Untitled

KSC5502D

BJT BD139

BDX548

8 pin ic 9435

FJL6920 equivalent

power bjt

KSC5027

power bjt

Untitled

Untitled

NJL5165KL

Untitled

Logic Level Gate Drive mosfet

Untitled