WMV smd transistor

Abstract: smd mk
Contextual Info: f.con ISO 14001 Alphanumerical product list art. no. page art. no. page art. no. page art. no. page 1706 . G 1831 . ASL . SMD . ASL . SMD . B SM ASLA . ASLG . BADM . BADP . BK 01 32 BL 1 . BL 10 . BL 11 . BL 12 . BL 13 . BL 14 .

DS1250

Abstract: DS1250BL DS1250YL
Contextual Info: DS1250YL/BL DS1250YL/BL 4096K Nonvolatile SRAM NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1250Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Unlimited write cycles

Contextual Info: DS 1250YL/BL DALLAS DS1250YL/BL 4096K Nonvolatile SRAM SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1250Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 A17 A14 A13 A12 A11 A10 A9 A8

DS1350BL

Abstract: DS1350YL
Contextual Info: DS1350YL/BL DS1350YL/BL 4096K Nonvolatile SRAM with Battery Monitor NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1350Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built–in lithium battery provides more than 10 years of data retention • Data is automatically protected during VCC power

Contextual Info: DS 1250YL/BL DALLAS DS1250YL/BL 4096K Nonvolatile SRAM SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1250Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Ais • Data is automatically protected during power loss

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71V S 16163B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)16163B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71C16400B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. GM71C16400B/BL has realized higher density, h ig h e r perfo rm an ce and vario u s functions by utilizing advanced CMOS process

Contextual Info: @ LG Semicon. Co. LTD Description Features The GM71C S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)16160B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo gy. The

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71V S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71V(S)16160B/BL has realized higher density, higher performance and various functions by utilizing a d v an ced CM OS pr oc e s s t e c hnol ogy. The

GH17L

Abstract: cx171 GM71C17403B gm71c18163b 8011S GM71C17403 7011s gm71c18163
Contextual Info: GM7lCl6403B/BL LG Semicon Co.,Ltd. 4,194,304 WORDS x 4 BIT CbIOS DYNAMIC RAM Features Description The GM71 C 16403BIBL is the new generation d y n a m i c R A M organized 4,194,304 words x 4 b i t . GM71 C 16403B/BL h a s realized h i g h e r density, higher performance and various functions

L70b

Contextual Info: O K I Semiconductor MSM514410B/BL_ _ 1,048,576-Word x 4-Bit D YN AM IC RAM : FA S T P A G E M O D E T Y P E WRITE P ER BIT DESCRIPTION The MSM514410B/BL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514410B/BL is OKI's CMOS silicon gate process technology.

GM71C18160BJ6

Abstract: GM71C18160B gm71c18160bj GM71C18160BJ7 GM71C18160BT6 GM71CS18160BL LG Semicon GM71C18160BJ-6
Contextual Info: @ LG Semicon. Co. LTD. The G M 71C S 18160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)18160B/BL has realized higher density, higher performance and various functions by utilizing a d v a n c e d C M O S p r o c e s s te c h n o lo g y . T h e

34-PIN

Abstract: DS1350BL DS1350YL
Contextual Info: DS1350YL/BL DALLAS SEMICONDUCTOR D S 1 35 0Y L /B L 4096K Nonvolatile SRAM with Battery M onitor NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1350Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention

Contextual Info: 0S1350YUBL DS1350YL/BL 4096K Nonvolatile SRAM with Battery Monitor DALLAS SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1350Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention • Data is automatically protected during V c c power

34-PIN

Abstract: DS1250 DS1250BL DS1250BL-100 DS1250YL
Contextual Info: D S 1 2 5 0 Y L /B L DALLAS SEMICONDUCTOR DS1250YL/BL 4096K Nonvolatile SRAM NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1250Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is autom atically protected during power loss

SDT 1000 thermistor

Abstract: LV1011 SDT 100 thermistor SDT 20 thermistor L8150 Hall opamp hall sensor fan working hall effect E-L8150 E-L8150TR
Contextual Info: L8150 Brushless motor predriver Feature • Integrated Predriver IC for 3 phase BL motor. ■ Integrated Smooth driving concept with sinusoidal driving waveforms. ■ BCD5 technology 0.6mm. ■ Package: SO28. ■ Three Hall effects, differential input comparators.

Hall opamp

Abstract: L8150 LV1011 hall sensor 80 L hall sensor fan power transistor motor control working hall effect E-L8150 E-L8150TR SDT 1000 thermistor
Contextual Info: L8150 Brushless motor predriver Feature • Integrated Predriver IC for 3 phase BL motor. ■ Integrated Smooth driving concept with sinusoidal driving waveforms. ■ BCD5 technology 0.6mm. ■ Package: SO28. ■ Three Hall effects, differential input comparators.

Contextual Info: INCREMENTAL HOLLOW SHAFT ENCODER • Hollow shaft ■ Optical measuring principle ■ Short circuit and overload protection ■ Encoder self test with alarm circuit ■ Protection class IP 64 Model Bl 58-H Bourns Encoders Electrical Characteristics Output.

14 pin DOT MATRIX

Abstract: LCD 4 X 20 LCD 2LINE lcd 16 pin 15 pin dot matrix lcd 2 x 8 NJU6432 lcd driver 16-character LCD Character Controller
Contextual Info: TCP MOUNTED LCD DRIVER 12. LCD Driver Line-Up Type No. Function NJU6460A 16-character/1-line Dot Matrix LCD Controller Driver NJU6408B NJU6468 NJU6420B NJU6423B/BL/BS NJU6406B NJU6466 NJU6425 NJU6427 NJU6426 NJU6467 NJU6428/29Series NJU6469 NJU6461 NJU6424

TIA-968-A

Abstract: tx 4290 GR-1089-CORE TISP4290J3BJ TISP4395J3BJ
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP4290J3BJ THRU TISP4395J3BJ *R BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxJ3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region -Precise and Stable Voltage -Low Voltage Overshoot Under Surge

Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP4290J3BJ THRU TISP4395J3BJ *R BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxJ3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region -Precise and Stable Voltage -Low Voltage Overshoot Under Surge

TISP7180F3

Abstract: TISP7125F3 TISP7240F3 TISP7380F3 7240F3
Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP7125F3 THRU TISP7180F3, TISP7240F3 THRU TISP7380F3 MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP7xxxF3 MV, HV Overvoltage Protector Series Patented Ion-Implanted Breakdown Region

4200H3

Abstract: TISP4300H3BJ GR-1089-CORE TISP4070H3 TISP4070H3BJ TISP4115H3BJ TISP4125H3BJ TISP4220H3BJ TISP4240H3BJ TISP4350H3BJ
Contextual Info: *R o H V SC AV ER O M A I S IO P L L A N IA BL S N T E TISP4070H3BJ THRU TISP4115H3BJ, TISP4125H3BJ THRU TISP4220H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxH3BJ Overvoltage Protector Series TISP4xxxH3BJ Overview

Contextual Info: DRAWING THIS MADE DRAWING IN 4 THIRD ANGL E I S UNPUBLISHED. COPYRIGHT D C RELEASED FOR P U BL I C A TI O N 19 BY AMP INCORPORATED. ALL PROD 19 4092 IN TERNATIO NAL RIGHTS RESERVED. CODE PART NO. 8 6 1 81 4 - 1 861814-2 861814-3 861814-4 861814-5 861814-6