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    BL 7B Price and Stock

    Diodes Incorporated DESD3V3S1BL-7B

    TVS DIODE 3.3VWM 7VC DFN1006-2
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    DigiKey DESD3V3S1BL-7B Cut Tape 1,272,881 1
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    DESD3V3S1BL-7B Digi-Reel 1,272,881 1
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    DESD3V3S1BL-7B Reel 1,270,000 10,000
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    Avnet Americas DESD3V3S1BL-7B Reel 110,000 8 Weeks 10,000
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    Newark DESD3V3S1BL-7B Cut Tape 8,125 5
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    DESD3V3S1BL-7B Reel 10,000
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    TME DESD3V3S1BL-7B 1
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    Avnet Asia DESD3V3S1BL-7B 8 Weeks 10,000
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    Diodes Incorporated DESD3V3E1BL-7B

    TVS DIODE 3.3VWM 7VC DFN1006-2
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    DigiKey DESD3V3E1BL-7B Cut Tape 271,273 1
    • 1 $0.12
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    DESD3V3E1BL-7B Digi-Reel 271,273 1
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    DESD3V3E1BL-7B Reel 260,000 10,000
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    Avnet Americas DESD3V3E1BL-7B Reel 30,000 8 Weeks 10,000
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    Newark DESD3V3E1BL-7B Cut Tape 3,660 5
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    TME DESD3V3E1BL-7B 9,975 1
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    Avnet Asia DESD3V3E1BL-7B 8 Weeks 10,000
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    Diodes Incorporated DESD5V0U1BL-7B

    TVS DIODE 5VWM 7.2VC DFN1006-2
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    DigiKey DESD5V0U1BL-7B Cut Tape 180,458 1
    • 1 $0.14
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    DESD5V0U1BL-7B Digi-Reel 180,458 1
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    DESD5V0U1BL-7B Reel 180,000 10,000
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    Newark DESD5V0U1BL-7B Cut Tape 95 5
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    TME DESD5V0U1BL-7B 1
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    Diodes Incorporated DESD12V0S1BL-7B

    TVS DIODE 12VWM 33.5VC DFN1006-2
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    DigiKey DESD12V0S1BL-7B Cut Tape 88,533 1
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    DESD12V0S1BL-7B Digi-Reel 88,533 1
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    DESD12V0S1BL-7B Reel 80,000 10,000
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    TME DESD12V0S1BL-7B 1
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    Avnet Asia DESD12V0S1BL-7B 8 Weeks 10,000
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    Diodes Incorporated DESD5V0S1BL-7B

    TVS DIODE 5VWM 14VC DFN1006-2
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    DigiKey DESD5V0S1BL-7B Digi-Reel 58,513 1
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    DESD5V0S1BL-7B Cut Tape 58,513 1
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    DESD5V0S1BL-7B Reel 40,000 10,000
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    Bristol Electronics DESD5V0S1BL-7B 25,630
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    DESD5V0S1BL-7B 310 27
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    TME DESD5V0S1BL-7B 1
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    Avnet Asia DESD5V0S1BL-7B 8 Weeks 10,000
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    BL 7B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 531,~A >@/96:6.?@=2 >64:.8 =28.C 3HDTURHS \ 9dV ]b^e^\mkb\ lmk^g`ma /[^mp^^g \hbe Zg] \hgmZ\ml0 \ Snk`^ pbmalmZg] ohemZ`^ ni mh <666VBD2 f^^ml GDD PZkm <> Zg] T^e^\hk]bZ \ Mbg4 \k^^iZ`^ bl 84;ff /[^mp^^g \hbe Zg] \hgmZ\m02 Mbg4 \e^ZkZg\^ bl 846ff /[^mp^^g \hbe Zg] \hgmZ\m0


    Original
    666VBD2 \hgmZ\m02 846ff 96fV0 PDF

    weidmuller 170125

    Abstract: 160505 din 46228 25nm 161871 Weidmuller BLZ 5.00 H07V-K analoge schaltkreise 132166 BL35
    Text: Steckverbindersysteme in metrischer Bauform Systemübersicht • BL 3.5/SL 3.5 Raster 3,5 mm Die Systeme zeichnen sich durch • BLZ 5.00/SL 5.00 (Raster 5,00 mm) • eine platzsparende Bauweise • BLZ 7.50/SL 7.50 (Raster 7,50 mm) • eine konische Drahteinführung


    Original
    00/SL 50/SL 12-Rundstecker, weidmuller 170125 160505 din 46228 25nm 161871 Weidmuller BLZ 5.00 H07V-K analoge schaltkreise 132166 BL35 PDF

    Untitled

    Abstract: No abstract text available
    Text: in ttil « « « « « * 28F400BX-TL/BL, 28F004BX-TL/BL 4-MBIT 256K x 16, 512K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.3V ±0.3V ■ x8/x16 Input/Output Architecture — 28F400BX-TL, 28F400BX-BL


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    28F400BX-TL/BL, 28F004BX-TL/BL x8/x16 28F400BX-TL, 28F400BX-BL 16-bit 32-bit 28F004BX-TL, 28F004BX-BL 16-KB PDF

    pl3155ac

    Abstract: Trompeter 305 TAI-144 TAI-173
    Text: RED NUCATES ORIGINAL CABLES ACCOMDOATEO Ml7/176-00002 TWC-7B-1 TWC-124-1A 10602, RAYCHEM TWAC-78-1F2 702BDO13O, RAYCHEM 83310 BELDEN 202-3927 MICRDODT 202-3942 MICRODOT B451 BELDEN 202-3934 MICROOOT 2524E0114, RAYCHEM TWC-7B-2 TWC-124-2 BL-9B2 TIMES BL— 1242 TIMES


    OCR Scan
    Ml7/176-00002 TWC-124-1A TWAC-78-1F2 702BDO13O, 2524E0114, TWC-124-2 GCB75TM24H, 221BBB, GCB75RR1. HMS2-1149, pl3155ac Trompeter 305 TAI-144 TAI-173 PDF

    GM71C4100

    Abstract: bl70 BLT70 BL-70 gm71c4100bj GM71C4104 bl80
    Text: @ LG Semicon. Co. LTD._ Description Features The GM71C4100B/BL is the new generation dynamic RAM organized 4,194,304 x 1 bit. GM71C4100B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The


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    GM71C4100B/BL 300mil 20pin 400mil GM71C4100 bl70 BLT70 BL-70 gm71c4100bj GM71C4104 bl80 PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1330YL/BL DS1330YL/BL 256K Nonvolatile SRAM with Battery Monitor DALLAS SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1330Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention NC NC A14


    OCR Scan
    DS1330YL/BL DS1330Y/AB D1330YL/BL 34-PIN 68-pin PDF

    GM71C17403b

    Abstract: GM71C17403BJ GM71C17403
    Text: @ LG Semicon. Co. LTD. Features Description The GM71C17403B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71C17403B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The


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    GM71C17403B/BL 300mil GM71C17403b GM71C17403BJ GM71C17403 PDF

    GM71V17803BJ6

    Abstract: fl37 IRAD GM71V17803BJ7
    Text: @ LG Semicon. Co. LTD. Description Features The GM71V S 17803B/BL is the new generation dynamic RAM organized 2,097,152 words x 8 bit. GM71V(S)17803B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The


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    GM71V 17803B/BL 28pin 400mil GM71V17803BJ6 fl37 IRAD GM71V17803BJ7 PDF

    512X16 sram

    Abstract: KM616V4002B KM616V4002
    Text: Prr?]>rrTine:y KM616V4002B/BL, KM616V4002B/BLI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION - F astA ccessT im e 10,12,15 *(M a x.) - Low Power Dissipation Standby (TTL) : 40* • (Max.) The KM616V4002B/BL is a 4,194,304-bit high-speed Static


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    KM616V4002B/BL, KM616V4002B/BLI 256Kx KM616V4002B/BL-10 KM616V4002B/BL KM616V400202B/BLI 44-SOJ-400 44-TSQP2-400F 512X16 sram KM616V4002B KM616V4002 PDF

    Untitled

    Abstract: No abstract text available
    Text: intûl * 28F400BX-TL/BL, 28F004BX-TL/BL 4-MBIT 256K x 16,512K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — VCc = 3.3V ±0.3V ■ Automatic Power Savings Feature — 0.8 mA typical Ice Active Current in


    OCR Scan
    28F400BX-TL/BL, 28F004BX-TL/BL 28F400BX-TL, 28F400BX-BL 16-bit 32-blt 28F400BX-L 28F004BX-L PDF

    bl 9 a2

    Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400
    Text: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.


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    MSM511000B/BL_ 576-Word MSM511000B/BL cycles/64ms MSM5110OOB/BL 242i4D 00177fa3 bl 9 a2 18-PIN 20-PIN 26-PIN ZIP20-P-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM514102B/BL Series 4,194,304-word x 1-bit Dynamic RAM The Hitachi HM514102B/BL is a CMOS dynamic RAM organized 4,194,3 0 4 -w o rd x 1-bit. H M 514102B /B L has realized higher density, higher perform ance and various functions by employing 0.8 pm CMOS process technology and


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    HM514102B/BL 304-word 514102B 20-pin 20-pin HM514102BS/BLS-7 HM514102BS/BLS-8 PDF

    "NOR Flash" intel 28f

    Abstract: 486TM 80L188EB intel PLD
    Text: INTEL CORP {flEMORY/PLD/ L7E D in t e l • 4fl2bl7b 0001 373 S>40 ■ P O IIilL D B S lO K IM V 28F400BX-TL/BL, 28F004BX-TL/BL 4-MBIT (256K x 1 6 ,512K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY ■ Low Voltage Operation for Very Low Power Portable Applications


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    28F400BX-TL/BL, 28F004BX-TL/BL x8/x16 28F400BX-TL, 28F400BX-BL 16-bit 32-bit 28F004BX-TL, 28F004BX-BL 28F400BX-L "NOR Flash" intel 28f 486TM 80L188EB intel PLD PDF

    I28F400

    Abstract: 80L188EB 82360SL intel PLD D773
    Text: A D V A N C E IN F O R M A T IO N in te i INTEL CORP MEMORY/PLD/ SbE » • 4fl2bl7b Da773Sa TßH ■ I T L E 28F400BX-TL/BL, 28F004BX-TL/BL - T qt (3> 2 6 4MBIT (256K x16, 512K x8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY I Low Voltage Operation for Very Low


    OCR Scan
    Da773Sa 28F400BX-TL/BL, 28F004BX-TL/BL x8/x16 28F400BX-TL, 28F400BX-BL 16-bit 32-bit 28F004BX-TL, 28F004BX-BL I28F400 80L188EB 82360SL intel PLD D773 PDF

    HM514402B/BL

    Abstract: HM514402
    Text: HM514402B/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi HM 514402B/BL is a CMOS dynamic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1 4 4 0 2 B /B L has re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v ario u s fu n c tio n s by


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    HM514402B/BL 576-word 514402B/BL 514402B 20pin 20-pin HM514402BS/BLS-7 HM514402BS/BLS-8 300-mil HM514402 PDF

    HM514402

    Abstract: M514402 HM514402bs HM514402BZ
    Text: HM514402B/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi HM 514402B/BL is a CMOS dynamic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1 4 4 0 2 B /B L has re a liz e d h ig h e r d en sity , h ig h er p e rfo rm a n c e and v ario u s fu n c tio n s by


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    HM514402B/BL 576-word 20-pin HM514402BS/BLS-7 HM514402 M514402 HM514402bs HM514402BZ PDF

    Untitled

    Abstract: No abstract text available
    Text: bbSB^Bl Philips Semiconductors QQ5H351 T56 BBAPX Preliminary specification Silicon planar epitaxial high-speed switching diode — BAS216 N AUER PHILIPS/DISCRETE FEATURES b?E D QUICK REFERENCE DATA • SMD envelope SYMBOL • High speed vH continuous reverse


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    QQ5H351 BAS216 BAS216 00BM325 PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1345YUBL DS1345YL/BL DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery Monitor NOT RECOMMENDED FOR NEW DESIGNS. SEE PS1345Y/AB DATA SHEET. PIN ASSIGNMENT FEATURES • Built-in lithium battery provides more than 10 years of data retention NC NC A14


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    DS1345YUBL DS1345YL/BL 1024K PS1345Y/AB QQlb74b D1345YL/BL 34-PIN 2bl4130 D01b747 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbSB^Bl 0031531 "ns HAPX^^duc^peoification PNP 4 G Hz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b'lE PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband


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    BFQ32 BFQ32/02 BFR96. bbS3T31 PDF

    2SJ223

    Abstract: No abstract text available
    Text: bl E J> 2 S J 2 2 3 m 44tìb2G5 0D12cìfltì 7b7 « H I T 4 , 2 S J 2 2 3 § — HITACHI/ OPTOELECTRONICS) Silicon P Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current


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    2SJ223 0D12c 2SJ223 GD12T PDF

    BY448

    Abstract: BY440 BY458 Philips diode tFR
    Text: N AMER PHI LIPS/DISCRETE bTE D • bbSB^Bl QG2bM75 TTM BY448 BY458 IAPX PARALLEL EFFICIENCY DIODES Double-diffused passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, intended fo r use as efficiency diodes in transistorized horizontal deflection circuits and PPS power-pack system


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    bbS3131 QG2bM75 BY448 BY458 BY458 BY448 OD-57. 002b4fll BY440 Philips diode tFR PDF

    LT 8834

    Abstract: LT 7232 TS-3401
    Text: "a l p h a n u m e r i c in d e x L B L -9 3 1 6 G . L BL -9429G 5-11 5-14 L T C - 2 7 2 3 Y . 10-21 L TC -3710G 14-3


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    -9429G -9315G S-9404G -3710G -3718G -4621W -4623W S-9409G LT 8834 LT 7232 TS-3401 PDF

    RDM15PB5

    Abstract: RDM15SA5
    Text: C6 I/O Connectors ñ-bl-IJ D-Subminiature PCB Right Angle Performance Data MATERIALS Insulator Material: Glass Filled Polyester Color Black U.L. Flammability 94V-0 Contact Material: Phosphor Bronze Contact Plating: 15m- " .381 n,m Gold Over Nickel 30 m- " (.762 y,m) Gold Over Nickel


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    RDM15SA5 RDM15SB5 RDM15PA5 RDM15PB5 DA001A RDM25SA5 RDM25SB5 RDM25PA5 RDM25PB5 R0M37SA5 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0S1350YUBL DS1350YL/BL 4096K Nonvolatile SRAM with Battery Monitor DALLAS SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1350Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention • Data is automatically protected during V c c power


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    0S1350YUBL DS1350YL/BL 4096K DS1350Y/AB DS1350YUBL D1350YL/BL 34-PIN PDF