SU25
Abstract: SU50B10LS
Text: MICROWAVE TECHNOLOGY bb E D • bl241DD DQQD4E1 lb 3 HMRIilV SST SERIES SU/S VHF/UHF SILICON POWER FETS 10 TO 120 WATTS, 10MHz-500MHz MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 lds[A] FEATURES • N-CHANNEL JFET, DEPLETION MODE
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bl241DD
10MHz-500MHz
BU120010LS
SU25
SU50B10LS
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Untitled
Abstract: No abstract text available
Text: M w T -1 6 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y rr • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 900 MICRON GATE WIDTH DIAMOND-UKE CARBON PASSIVATION
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MwT-16
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Untitled
Abstract: No abstract text available
Text: MwT-1 12 GHz High Gain GaAs FET M ic r o w a v e T e c h n o l o g y Units in iim r r • • • • • 10 dB GAIN AT 12 GHz EXCELLENT FOR FEEDBACK AMPLIFIER APPLICATIONS 100 MHz TO 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE
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bl241DD
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Untitled
Abstract: No abstract text available
Text: MwT-102 2-18 GHz MMIC AMPLIFIER CHIP M ß k U L MICROWAVE TECHNOLOGY 4268 solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 25 dB TYPICAL REVERSE ISOLATION • ±0.75 dB TYPICAL OUTPUT POWER FLATNESS • 7.5 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBc TYPICAL SECOND HARMONICS AT Psat
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MwT-102
MwT-102-GFP
VDDO100
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Untitled
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE usvt I- r m blEMlOQ 00D023A LTS • PIRUV w T - 3 26 GHz High Power GaAs FET 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES r —7Pr l «* ■ M MicroWave Technology t » • +21 DBM OUTPUT POWER AT 12 GHZ
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00D023Ã
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Untitled
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE » • b iem o o ooooEisb b i o ainRüiv M w T -5 G G / S G / H G 20 GHz High Gain Dual Gate GaAs FET DEVICE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 FEATURES • 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUrT
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1241GG
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