BLF6G22S-45 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608B ; Power gain: 18.5 dB |
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BLF6G22S-45 |
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NXP Semiconductors
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BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power |
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BLF6G22S-45,112 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT608B |
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Original |
PDF
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BLF6G22S-45,112 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608B ; Power gain: 18.5 dB; Package: SOT608B (CDFM2); Container: Bulk Pack |
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Original |
PDF
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BLF6G22S-45,112 |
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NXP Semiconductors
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BLF6G22S-45 - Power LDMOS transistor, SOT608B Package, Standard Marking, IC'S Tube - DSC Bulk Pack |
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Original |
PDF
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