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    BLF7G24LS-140 NXP SEMICONDUCTORS Search Results

    BLF7G24LS-140 NXP SEMICONDUCTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BLF7G24LS-140 NXP SEMICONDUCTORS Datasheets Context Search

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    Abstract: No abstract text available
    Text: NXP power LDMOS transistors BLF7G24LS-100 and BLF7G24LS-140 RF power transistors for leading LTE basestation performance at 2.3 to 2.4 GHz Designed for LTE basestations and built in industry-leading Gen7 LDMOS, these highly DPDfriendly transistors cover the entire frequency range of 2.3 to 2.4 GHz. They enable asymmetrical


    Original     		PDF BLF7G24LS-100 BLF7G24LS-140 BLF7G24LS-100 BLF7G24LS-140