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    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b3E D • blll54T DGDflb3fl 302 HIMRN M T 4C 16260/1 256KX16 W ID ED R A M MICRON I s e m ic o n d u c t o rin c WIDE DRAM 256K X 1 6 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages


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    PDF blll54T 500mW 024-cycle MT4C16260/1

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEM ICO NDUCTOR INC b'IE D • blll54T □ □□Tia'I 141 H M R N 256K SRAM 1DIE SEMICONDUCTOR, INC- SRAM DIE 256K SRAM 256K X 1, 64K X 4, 32K x 8 FEATURES • • • • DIE OUTLINE Top View Single 5V or 3.3V power supply All I/O pins are 5V tolerant


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    PDF blll54T MT5C2565 150mm

    T2D 93

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b7E D • blll54T ÜQO'îEe? ñ'ÍQ BIMRN MICRON 256K SRAM MT5C2561 X 1 SR A M 256K X 1 SRAM • H igh speed: 1 0 ,1 2 ,1 5 ,2 0 ,2 5 and 35ns • High-perform ance, low-power, CM O S double-m etal process • Single +5V ±10% pow er supply_


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    PDF blll54T MT5C2561 24-Pin T2D 93

    Untitled

    Abstract: No abstract text available
    Text: MT4C2M8B1 S 2 MEG x 8 DRAM MICRON I TECHNOLOGY, INC. DRAM 2 MEG x 8 DRAM 5.0V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard x8 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5.0V ±10% power supply


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    PDF 250mW 048-cycle 28-Pin blll54T 00157Mb

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT4LC8M8P4/C2 I^IICZR O N 8 MEG X 8 DRAM 8 MEG x 8 DRAM DRAM 3.3V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 13 row-addresses, 10 column-addresses (P4) or


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    PDF 096-cycle 34-Pin DD12Dc

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE .1 MT28LF400 256K x 16, 512K x 8 FLASH MEMORY MICRON •- OUAMTUU o c v tc s a . INC 256K x 16, 512K x 8 3.3V/12V, BOOT BLOCK FEATURES • Seven erase blocks: - 16K B /8K -w ord boot block protected - T w o 8K B/ 4K -w ord param eter blocks - Four general m em ory blocks


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    PDF MT28LF400 V/12V, 100ns, 120ns 16-bit 001CH23

    Untitled

    Abstract: No abstract text available
    Text: MICRON I 64K TECHNOLOGY, INC. SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT PIN ASSIGNMENT Top View • • • • • • • • Fast access times: 4 .5 ,5 ,6 and 7ns Fast OE# access times: 4 .5 ,5 and 6ns Single +3.3V +10% /-5% power supply


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    PDF MT58LC64K16/18D8

    C1994

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N I MT20D840 8 MEG X 40 DRAM MODULE 8 MEG X 40 DRAM DRAM MODULE FAST PAGE MODE FEATURES Industry-standard 72-pin single in-line package High-perform ance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins are TTL-compatible


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    PDF MT20D840 72-pin 030mW 048-cycle 096-cycle DE-16) MT20D840G T20DA40 blll541 C1994

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT58LC128K32/36F1 128K X 32/36 SYNCBURST SRAM |U |IC R O N 128K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View


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    PDF MT58LC128K32/36F1 100-Pin 160-PIN

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 4 MEG X 64 DRAM SODIMM M IC R O N I TF.CHNOLOOY, INC. SMALL-OUTLINE DRAM MODULE MT4LDT464H X S FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-stand ard pinout in a 144-pin, sm all-outline, dual in-line m em ory m odule (DIMM) • 32MB (4 M eg x 64)


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    PDF MT4LDT464H 144-pin, 096-cycle 256ms

    Untitled

    Abstract: No abstract text available
    Text: M I ir S n M MT58LC32K32/36B3 32K X 32/36 SYNCBURST SRAM SYNCHRONOUS SRAM 32K x 32/36 SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 8 .5 ,9 ,1 0 and 11ns


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    PDF MT58LC32K32/36B3 100-PIN MT50LC32K32/36B3

    Untitled

    Abstract: No abstract text available
    Text: M I C R O N I M T 5 8 L C 1 2 8 K 1 6/18D8 128K x 16/18 SYNCBURST SRAM lECHNOtOC.V INC SYNCHRONOUS 128K x 16/18 SRAM O +3-3V SUPPLY, PIPELINED, BURST COUNTER a n d s in g l e - c y c l e d e s e l e c t D A I t Jl OliMIVI FEATURES Fast access times: 4.5, 5 ,6 and 7ns


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    PDF 6/18D8 MT58LC128K16/18D8 0022A73

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MICRON » j! MT24D836 8 MEG X 36, 16 MEG x 18 DRAM MODULE 8 MEG x 36,16 MEG x18 DRAM MODULE FAST PAGE MODE FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-perform ance CMOS silicon-gate process • Single 5V ±10% pow er supply


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    PDF MT24D836 72-pin 536mW 048-cycle DE-15) MT24D836M/G A0-A10 T24D836

    dram 88 pin

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC 55E D MICRON I • blllS4T 0DGSDb3 3T0 ■ MRN MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD - " T


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    PDF MT12D88C25636 88-Pin dram 88 pin

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 1 MT28SF200 128K x 16, 256K x 8 FLASH MEMORY FLASH MEMORY 128K x 16,256K x 8 — FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|_iA at 5V Vcc; 2|iA at


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    PDF MT28SF200 16KB/8K-word 100ns 110ns, 150ns 072x16

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b7E ]> • blllS^H DOQTSTb 122 ■ MRN ADVANCE MICRON 64K MT58LC64K18A6 18 SYNCHRONOUS SRAM 64K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED I/O AND LINEAR BURST COUNTER FEATURES • • • • • « • • • • • • • Fast access times: 7,10,12 and 15ns


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    PDF MT58LC64K18A6 MT58LC64K18A6EJ-10 MT56LC64K18A6

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by


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    PDF MT4D232 MT8D432 72-pin, 024-cycle 048-cycle P199S.

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MT9LD272A X , MT18LD472A(X) 2, 4 MEG X 72 DRAM MODULES MICRON I TECHNOLOGY, INC. 2, 4 MEG x 72 DRAM MODULE 16, 32 MEGABYTE, ECC, NONBUFFERED, 3.3V, 8 CAS#, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • Eight CAS#, ECC pinout in a 168-pin, dual-in-line


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    PDF MT9LD272A MT18LD472A 168-Pin 168-pin, 240mW 048-cycle G01SL01

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M I l^ n n N 64K +3.3VSUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4 .5 ,5 ,6 ,7 and 8ns Fast OE: 5 and 6ns Single +3.3V ±5% pow er supply 5V-tolerant I /O


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    PDF MT58LC64K18C4/A6 MT58LC64K18C4LG-8 MT5SLC64K18C4/A6

    MT4C4001

    Abstract: mt4c4001jdc sm03b
    Text: MICRON TECHNOLOGY INC 55E D WÊ blllSHT ITT H I URN M T4C4001J DIE 1 MEG x 4 DRAM fAICRQN MILITARY DRAM DIE 1 MEG x 4 DRAM DIE FEATURES DIE OUTLINE Top View 14 13 12 11 10 15 5 4 3 2 □ □ □ □ □ □□□ □ □ □ □□□ □ DIE DATA BASE D15B


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    PDF T4C4001J 450mW 024-cycle MT4C4001 mt4c4001jdc sm03b

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC 55E D • blllSMT OOGSbE'i bBfl MflRN MT5C2565 883C 64K X 4 SR AM 1IÍZ R O ÍS J MILITARY SRAM 64K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • • • • PIN ASSIGNMENT Top View SMD 5962-89524 JAN M 38510,293 MIL-STD-883, Class B


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    PDF MT5C2565 MIL-STD-883, 28-Pin MIL-STD-883 MT5CS56SM3C

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M I I C R EDODRAM O N TECHNOLOGY INC 8 H R AM UnMIÏI M E G x 8 MT4LC8M8P4 MT4LC8M8C2 FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 12 row, 11 column addresses C2 or 13 row, 10 column addresses (P4)


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    PDF 096-cycle 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M T 5 8 L C 1 2 8 K 16/ 18 G 1 1 2 8 K X 16 /18 S Y N C B U R S T S R A M MICRON I TECHNOLOGY, INC. SYNCHRONOUS SRAM 128Kx 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES PIN ASSIGNMENT Top View 100-Pin TQFP


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    PDF 128Kx 100-Pin MT58LC128K16/18G1 blll54t

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT4LC8M8E1/B6 8 MEG x 8 DRAM MICRON I TECHNOLOGY. INC. 8 MEG x 8 DRAM NEW DRAM 3.3V, FAST PAGE MODE • Single +3.3V ±0.3V power supply • Industry-standard x8 pm out, timing, functions and packages • 13 row-addresses, 10 column-addresses E l or


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    PDF 096-cycle 34-Pin 00122L7