Untitled
Abstract: No abstract text available
Text: TGA3504-SM 2-30 GHz GaAs Wideband Gain Block Applications • General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Functional Block Diagram
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TGA3504-SM
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Untitled
Abstract: No abstract text available
Text: TGA3503-SM 2-30 GHz GaAs Wideband Gain Block Applications • General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Functional Block Diagram
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TGA3503-SM
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TB0440LW1
Abstract: No abstract text available
Text: INTEGRATED DUAL-CHANNEL BLOCK CONVERTER MODEL: SYS0216N01R FEATURES • 18–40 GHz frequency coverage integrated aluminum housing The SYS0216N01R is an integrated dual-channel millimeter-wave block converter with internal filtering and LO multipliers. The
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SYS0216N01R
TB0440LW1
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Untitled
Abstract: No abstract text available
Text: Data sheet 3-conductor ground terminal block; suitable for Ex e II applications Item No.: 2010-1307 3-conductor ground terminal block; suitable for Ex e II applications Item No.: 2010-1307 3-conductor ground terminal block; suitable for Ex e II applications
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Untitled
Abstract: No abstract text available
Text: Data sheet 3-Conductor through terminal block; suitable for Ex e II applications Item No.: 2006-1301 3-Conductor through terminal block; suitable for Ex e II applications Item No.: 2006-1301 3-Conductor through terminal block; suitable for Ex e II applications
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Untitled
Abstract: No abstract text available
Text: Data sheet 2-Conductor through terminal block; suitable for Ex e II applications Item No.: 2002-1201 2-Conductor through terminal block; suitable for Ex e II applications Item No.: 2002-1201 2-Conductor through terminal block; suitable for Ex e II applications
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b982
Abstract: b1676 b896 SP 1191 B1328 B3045 FLASH TRANSLATION LAYER FTL 5498 transistor X28F008SA-120 b3305
Text: 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDie Product Specification Y Y Y Y High-Density Symmetrically Blocked Architecture Sixteen 64-Kbyte Blocks Extended Cycling Capability 100K Block Erase Cycles 1 6M Block Erase Cycles per Chip Automated Byte Write and Block Erase
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28F008SA
64-Kbyte
X28F008SA-120
AP-359
AP-360
25F008SA
AP-364
b982
b1676
b896
SP 1191
B1328
B3045
FLASH TRANSLATION LAYER FTL
5498 transistor
X28F008SA-120
b3305
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Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
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1N5408
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Untitled
Abstract: No abstract text available
Text: Text DC Block Text Complementary Signal Processing The Florida RF Labs line of DC Block devices are suitable for applications up to 18 GHz and 75 volts. The DC Block prevents DC current flow, while permitting RF power to flow. The rugged construction of the device
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DCB10L16S
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Mitsubishi th-n20kp
Abstract: AD16-22DS Kyoritsu 3301 kyoritsu model 1008 terasaki xh100ns KSD 166 16a 250v ksd 302 250v, 10a carlo gavazzi VDE 0660 ksd 250v 10a EEL 22w transformer
Text: CONTENT KIN AUTOMATI ON SDN. BHD. ANDELI Bus bar Support Power Supply MCB Bar Contactor / Thermal Overload Relay / Auxiliary Contact Terminal Block Din Rail Terminal Block C/W Cover Terminal Block Float Switch Foot Switch Warning Light / Tower Light Hour Run Meter / Time Switch / Weather Proof Isolating Switch
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100HP)
125HP)
112KW
150HP)
135KW
180HP)
150KW
200HP)
164KW
220HP)
Mitsubishi th-n20kp
AD16-22DS
Kyoritsu 3301
kyoritsu model 1008
terasaki xh100ns
KSD 166 16a 250v
ksd 302 250v, 10a
carlo gavazzi VDE 0660
ksd 250v 10a
EEL 22w transformer
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Untitled
Abstract: No abstract text available
Text: G-SPB-2.00 Splice Block The Gilbert Splice Block has been designed with superior electrical performance. The one-piece body is machined from a 6000 series aluminum alloy to minimize moisture ingress paths. This product is designed to give high RF performance in
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440X1
Abstract: Silicon Designs Model 2230 440-x1 4-40x1
Text: • • • • • SILICON DESIGNS, INC. Model 2230 Advanced Accelerometer Solutions Orthogonal Mounting Block For use with models 2010, 2012, 2210, 2220, 2240, 2260 & 2264 Mounts up to 3 single axis modules Rugged black anodized aluminum Block mass = 79 grams
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1/4-20x1
M6x1x35mm
4-40x1/2"
2230-BLK
440X1
Silicon Designs
Model 2230
440-x1
4-40x1
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440-x1
Abstract: Model 2235 4-40x1
Text: • • • • SILICON DESIGNS, INC. Model 2235 Advanced Accelerometer Solutions Single Axis Stud Mounting Block Accepts Accelerometer Models: o 2010 o 2012 o 2210 o 2220 o 2240 o 2260 o 2264 Rugged Black Anodized Aluminum Block mass = 6.2 grams Fasteners Included:
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4-40x1/2"
1210-TST)
440-x1
Model 2235
4-40x1
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KT4B
Abstract: NDN3WH ts1401 10SP 016 ts1002 TB400 NTQ23-WH
Text: Connectors Section Contents Page Rail mount terminal blocks NDN Series 35mm DIN rail mount blocks . . . . . . . . 304-305 N512-BK 12-Pole block . . . . . . . . . . . . . . . . . . . . . . . . . 306 NFT2-WH 2-Pole block . . . . . . . . . . . . . . . . . . . . . . . . . 306
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N512-BK
12-Pole
TS0805
TS0806
TS1005
TS1006
KT4B
NDN3WH
ts1401
10SP 016
ts1002
TB400
NTQ23-WH
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TS1003
Abstract: TS0801 TS1001 TS1002 NDN111AWH 220HB TB200HB ts08 ts1201 TB400
Text: Wire Connection Products Section Contents Page Rail mount terminal blocks NDN Series 35mm DIN rail mount blocks . . . . . . . . 286-287 N512-BK 12-Pole block . . . . . . . . . . . . . . . . . . . . . . . . . . 288 NFT2-WH 2-Pole block . . . . . . . . . . . . . . . . . . . . . . . . . . 288
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N512-BK
12-Pole
TS1003
TS0801
TS1001
TS1002
NDN111AWH
220HB
TB200HB
ts08
ts1201
TB400
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ICE 2A265
Abstract: 2A265 3 phase UPS block diagram single phase ups block diagram UPS diagrams H-bridge inverter hardware IEC62040-3 40khz sine wave inverter 2.5 kva inverter diagrams UPS design
Text: Infineon UPS Reference Solution Content Reference Reference Solution Solution Features Features Key Key Components Components Features Features Block Block Diagrams, Diagrams, Program Program Flow, Flow, Modulation Modulation Techniques Techniques Test Test Results
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19-Mar-07
2A265)
XC164CM8FF
XC866-4FR
ICE 2A265
2A265
3 phase UPS block diagram
single phase ups block diagram
UPS diagrams
H-bridge inverter hardware
IEC62040-3
40khz sine wave inverter
2.5 kva inverter diagrams
UPS design
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Untitled
Abstract: No abstract text available
Text: Contents Features . 1 Applications. 1 Block Diagram . 2
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Untitled
Abstract: No abstract text available
Text: Data sheet 3-Conductor through terminal block; suitable for Ex e II applications; suitable for Ex i applications Item No.: 2010-1304 3-Conductor through terminal block; suitable for Ex e II applications; suitable for Ex i applications Item No.: 2010-1304 3-Conductor through terminal block; suitable for Ex e II applications; suitable for Ex i
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Untitled
Abstract: No abstract text available
Text: Data sheet 3-Conductor through terminal block; suitable for Ex e II applications; suitable for Ex i applications Item No.: 2006-1304 3-Conductor through terminal block; suitable for Ex e II applications; suitable for Ex i applications Item No.: 2006-1304 3-Conductor through terminal block; suitable for Ex e II applications; suitable for Ex i
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Toshiba TB 1230 N
Abstract: TMPZ84C011 TMPZ84C011A TMP284C011 FO34
Text: TOSHIBA TMPZ84C011A 3. OPERATIONAL DESCRIPTIONS 3.1 ENTIRE BLOCK DIAGRAM AND OPERATION OF EACH BLOCK 3.1.1 Entire Block Diagram 110489 Figure 3.1.1 Entire Block Diagram MPUZ80-302 TOSHIBA TMPZ84C011A 3.1.2 Operation of Each Block The TMPZ84C011A largely consists of a processor MPU , a counter/timer circuit
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TMPZ84C011A
MPUZ80-302
TMPZ84C011A
TLCS-Z80
withTLCS-Z80
TMPZ84C30A)
MPUZ80-382
Toshiba TB 1230 N
TMPZ84C011
TMP284C011
FO34
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Untitled
Abstract: No abstract text available
Text: 8M 1M x 8 Flash Memory • High-Density Symmetrically Blocked Architecture - Sixteen 64K Blocks • Extended Cycling Capability - 100,000 Block Erase Cycles - 1.6 Million Block Erase Cycles per Chip • Automated Byte Write and Block Erase - Command User Interface
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44-Lead
40-Lead
LH28F008SA
DD1SS63
LH28F008SA
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ER-27
Abstract: 5498 transistor Intel Corporation esd testing flash memory SmartDie F008S
Text: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDie Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase
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28F008SA
64-Kbyte
F008S
120ns
AP-359,
AP-360,
25F008SA
AP-364,
ER-27
5498 transistor
Intel Corporation esd testing flash memory
SmartDie
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Untitled
Abstract: No abstract text available
Text: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDle Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase
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28F008SA
64-Kbyte
X28F008SA-120
AP-359,
AP-360,
25F008SA
AP-364
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY SMART 3 BOOT BLOCK FLASH MEMORY TECHNOLOGY, INC. FLASH MEMORY MT28F8° 0B3 MT28F008B3 3V Only, Dual Supply Smart 3 FEATURES GENERAL DESCRIPTION • Boot block architecture: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks
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MT28F8°
MT28F008B3
T28F008B3
T28F800B3
48-PIN
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