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    BLY 33 TRANSISTOR Search Results

    BLY 33 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BLY 33 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLW24

    Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
    Text: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V


    OCR Scan     		PDF BLW24 O-1175 O-117 T0-60CE S0-104 SO-104 BLW24 BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92

    blw 30 or bfw 30

    Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
    Text: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V


    OCR Scan     		PDF O-117 O-117 T0-60CE S0-104 SO-104 blw 30 or bfw 30 TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53

    BLY78

    Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
    Text: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V


    OCR Scan     		PDF BLW12 O-117 T0-60CE S0-104 SO-104 BLY78 BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53

    BLW16

    Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11
    Text: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V


    OCR Scan     		PDF BLW16 O-117 T0-60CE S0-104 SO-104 BLW16 BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11

    BLY93A

    Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
    Text: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V


    OCR Scan     		PDF BLW23 8/32-UNC-2A-Thread O-117 O-117 T0-60CE S0-104 SO-104 BLY93A BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63

    BLY93

    Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
    Text: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V


    OCR Scan     		PDF BLW14 O-129 O-117 T0-60CE S0-104 SO-104 BLY93 bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88

    BLY 33 transistor

    Abstract: BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor
    Text: BLW11 SILICON NPN VH F/UH F POWER TRANSISTOR Ideal for C A T V Applications Typical Gain Bandwidth Product —1.35 GHz 11 dB Gain @ 20 0 M H z. In Broadband Circuit Low Distortion Low Noise mechanical data absolute maximum ratings (Tease ” 2 5 °C ) . . .


    OCR Scan     		PDF BLW11 O-117 T0-60CE S0-104 SO-104 BLY 33 transistor BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor

    bly 2 10

    Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
    Text: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz


    OCR Scan     		PDF BFY90 O-117 T0-60CE S0-104 SO-104 bly 2 10 BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor

    TRANSISTOR BJ 042

    Abstract: No abstract text available
    Text: -Jolitron ÄTTÄIL© Devices. Inc. MEDIUM VOLTAGE, MEDIUM POWER CHIP NUM BER NPN EPI BASE POWER TRANSISTOR c rfl c 'l CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrom e Nickel Silver" also available


    OCR Scan     		PDF 37mra) 305mm) 300pF 300pF 2N3716, 2N5303, 2N5881, 2N5882 TRANSISTOR BJ 042

    5609

    Abstract: 5609 transistor 2N6676 2N6677 2N6678 CCC6678
    Text: 61 159 50 MICR OS EMI 02E 0 0 5 0 7 CORP/POWER T'33- 3 D DE jb llS ^ S O 0000507 5 | 05 CCC6678 TECHNOLOGY 15 A, 650 V, NPN Power Transistor Chip • E pitaxial D iffused, Glass Passivated ■ Contact M etallization: B ase and em itter-alum inum Collector (Al-Ti-Ni-Au


    OCR Scan     		PDF CCC6678 emitter-15-mil thickness-18 2N6676 2N6677 2N6678 5609 5609 transistor 2N6678 CCC6678

    Untitled

    Abstract: No abstract text available
    Text: 8368602 SOLITRON DEVICES _ At 8 6 D 02 55 0 INC »F|ñ3bñbDS 00D2S50 7 - 35 ~ 33 ELEMENT NUMBER 3 MEDIUM VOLTAGE, FAST SWITCHING MONOLITHIC NPN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 ,0 0 0 A Aluminum


    OCR Scan     		PDF 00D2S50 203mm) 40MHz 40MHz SDM3303; SDM3103

    2N5872

    Abstract: No abstract text available
    Text: de]ö3hflt,02 ~&i SOLITRON DEVICES INC üDDasflö t \ t ~-33-/7 ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PN P EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 À Aluminum FORMERLY 67 Collector: Polished Silicon


    OCR Scan     		PDF 203mm) 25MHz 25MHz 200pF 2N5872

    Untitled

    Abstract: No abstract text available
    Text: FRM9140D, FRM9140R, FRM9140H 11 A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.300S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRM9140D, FRM9140R, FRM9140H -100V, 300S1 O-204AA 100KRAD 300KRAD 1000KRAD

    2n5882

    Abstract: No abstract text available
    Text: 8368602 SOLITRON DEVICES INC °TS 95D 02 83 3 DE |fl3bab0a 0DD2Ö33 M £ \ ¥ M ,© 1 MEDIUM VOLTAGE, MEDIUM POW ER Devices, Inc. CHIP NUMBER dTI IMPIM EPI BA SE POW ER TRANSISTOR x i1 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold


    OCR Scan     		PDF 305mm) 2n5882

    Untitled

    Abstract: No abstract text available
    Text: FRS9140D, FRS9140R, FRS9140H 11 A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.315Q. TO-257AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRS9140D, FRS9140R, FRS9140H -100V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF

    BUT11 equivalent

    Abstract: transistor t220 but11 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS
    Text: • ? CLSC}B3J 0Q£flb55 0 ■ S C S -T H O M S O N []*[RK»i gïïl(Q M(gS S_G S - T H O M S O N "p3VI?> BUT11 FI B U T 1 1A /A F I _ 3QE J> HIGH VOLTAGE SWITCH DESCRIPTION The BUT11/A and BUT11FI/AFI are silicon miltiepitaxial mesa NPN transistors respectively in Jedec


    OCR Scan     		PDF flb55 BUT11 BUT11/A BUT11FI/AFI O-220 ISOWATT220 BUT11/FI BUT11A/AFI ISOWATT-220 BUT11 equivalent transistor t220 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS

    ali 3602

    Abstract: AC digital voltmeter using 7107 104j capacitor Y4W diode y4w transistor digital voltmeter using IC 7107 b082 op s 2 umi 1A 250V ali 3602 ic MF CAPACITOR 100v
    Text: ELECTRONIC MEASUREMENTS INC. Instruction Manual for EXX Series 60 Watt DC Power Supply Models: EXX EXX EXX EXX 7-6 15-4 20-3 30-2 EXX 60-1 EXX 120-0.5 EXX 250-0.25 T M -6 0 0 0 -E M INSTRUCTION MANUAL ABOUT THIS MANUAL About This Manual This manual contains user information for the EXX Series DC power supply. It provides information about


    OCR Scan     		PDF TM-6000-EM DS127-DS129 PC-6802-F ali 3602 AC digital voltmeter using 7107 104j capacitor Y4W diode y4w transistor digital voltmeter using IC 7107 b082 op s 2 umi 1A 250V ali 3602 ic MF CAPACITOR 100v

    Untitled

    Abstract: No abstract text available
    Text: h a r S E M I C O N D U C T O R FSS130D, FSS130R " Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 11 A, 100V, rDS ON = 0.210£i TO-257AA • Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event


    OCR Scan     		PDF FSS130D, FSS130R O-257AA 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSYA450D, FSYA450R Semiconductor D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSYA450D, FSYA450R 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSYA450D, FSYA450R Semiconductor March 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSYA450D, FSYA450R 1-800-4-HARRIS

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FSJ264D, FSJ264R S em iconductor 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 33A, 250V, i"[ s ON) = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSJ264D, FSJ264R MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: m H EW LETT PACKARD AT-00500 Up to 4 Hz General Purpose Silicon Bipolar Transistor Chip Features • Chip Outline 16.0 dBm typical Pi dB at 2.0 GHz • 11.5 dB typical Gi dB at 2.0 GHz • 2.5 dB typical NFo at 2.0 GHz • High Gain-Bandwidth Product: 9.0 GHz typical fr


    OCR Scan     		PDF AT-00500