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    BLY POWER TRANSISTOR Search Results

    BLY POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    BLY POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BLY53

    Abstract: C1212 transistor BLY-53 "vhf,uhf transistor" C1212 bly power transistor
    Text: GAE GREAT AMERICAN ELECTROINCS BLY-53/C12-12 Silicon NPN power VHF/UHF transistor BLY-53/C12-12 is designed for large signal amplifier and multiplier applications in portable and land mobile FM and AM equipment. Output Power: Frequency Range: Voltage: Package Type:


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    BLY-53/C12-12 BLY-53/C12-12 BLY53 C1212 transistor BLY-53 "vhf,uhf transistor" C1212 bly power transistor PDF

    transistor c3-12

    Abstract: C312 bly38 BLY-38 "vhf,uhf transistor" multiplier vhf C3-12
    Text: GAE GREAT AMERICAN ELECTROINCS BLY-38/C3-12 Silicon NPN power VHF/UHF transistor BLY-38/C3-12 is designed for large signal amplifier and multiplier applications in portable and land mobile FM and AM equipment. Output Power: Frequency Range: Voltage: Package Type:


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    BLY-38/C3-12 BLY-38/C3-12 0D00042 transistor c3-12 C312 bly38 BLY-38 "vhf,uhf transistor" multiplier vhf C3-12 PDF

    ICAN-6525

    Abstract: ICAN-6602 ICAN-6572 CD4560B CD4519B 4049U CD4560
    Text: Genera/ Operating and Application Considerations • • • • • • • • • O perating supply-voltage range Power dissipation and derating System noise considerations Power-source rules G ate-oxide protection networks Input signals and ratings Chip assem bly and storage


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    CS-29514RI ICAN-6525 ICAN-6602 ICAN-6572 CD4560B CD4519B 4049U CD4560 PDF

    Untitled

    Abstract: No abstract text available
    Text: STANDARD MOUNTING HARDWARE FOR POWER TRANSISTORS The mounting hardw are assem bly draw ings of Section A Figures 1 through 8 specify the individual hard­ w are items that are included in each mounting hardw are kit. Section A also references the p a ck a ge


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    UNC-28 PDF

    TRIMMER capacitor 5-60 pF

    Abstract: vhf linear amplifier philips carbon film resistor SC08a GP 809 Transistor 2222 philips Trimmer 60 pf BLY89 carbon resistor vk 200
    Text: VHF LINEAR Ampl. 25 W BLY89 Page 1 of 3 VHF Linear Amplifier BLY 89C There is not a personal design on this page, just I've transfered useful notes from PHILIPS RF Bipolar Transistors - Data HandBook (1993 Edition), about BLY89C VHF Power transistor, which is very popular among Amateur Radio "homebrewers".


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    BLY89) BLY89C SC08a 20and 20Settings\Administrator\My 20Documents\bly TRIMMER capacitor 5-60 pF vhf linear amplifier philips carbon film resistor SC08a GP 809 Transistor 2222 philips Trimmer 60 pf BLY89 carbon resistor vk 200 PDF

    ULN2455A

    Abstract: Integral ULN2455A ULN-2455A 2455A LN-2445A uln drive principle ULN pnp 2445A driver ULN pnp types of uln
    Text: ULN-2435A, U LN-2445A, ULN-2455A AUTOM OTIVE LAM P MONITORS ULN-2435A, ULN-2445A, AND ULN-2455A AUTOMOTIVE LAMP MONITORS FEATURES • No Standby Power • Integral to Wiring Assem bly • Fall-Safe • Reverse Voltage Protected • Internal Transient Protection


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    ULN-2435A, LN-2445A, ULN-2455A ULN-2445A, -2435A -2445A -2435A ULN2455A Integral ULN2455A 2455A LN-2445A uln drive principle ULN pnp 2445A driver ULN pnp types of uln PDF

    BLW24

    Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
    Text: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V


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    BLW24 O-1175 O-117 T0-60CE S0-104 SO-104 BLW24 BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92 PDF

    BLY93A

    Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
    Text: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V


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    BLW23 8/32-UNC-2A-Thread O-117 O-117 T0-60CE S0-104 SO-104 BLY93A BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63 PDF

    BLY78

    Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
    Text: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V


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    BLW12 O-117 T0-60CE S0-104 SO-104 BLY78 BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53 PDF

    blw 30 or bfw 30

    Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
    Text: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V


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    O-117 O-117 T0-60CE S0-104 SO-104 blw 30 or bfw 30 TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53 PDF

    BLW16

    Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11
    Text: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V


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    BLW16 O-117 T0-60CE S0-104 SO-104 BLW16 BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11 PDF

    BLY93

    Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
    Text: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V


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    BLW14 O-129 O-117 T0-60CE S0-104 SO-104 BLY93 bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88 PDF

    BLY 33 transistor

    Abstract: BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor
    Text: BLW11 SILICON NPN VH F/UH F POWER TRANSISTOR Ideal for C A T V Applications Typical Gain Bandwidth Product —1.35 GHz 11 dB Gain @ 20 0 M H z. In Broadband Circuit Low Distortion Low Noise mechanical data absolute maximum ratings (Tease ” 2 5 °C ) . . .


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    BLW11 O-117 T0-60CE S0-104 SO-104 BLY 33 transistor BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor PDF

    bly 2 10

    Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
    Text: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz


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    BFY90 O-117 T0-60CE S0-104 SO-104 bly 2 10 BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor PDF

    TRANSISTORS

    Abstract: 2SA POWER TRANSISTORS DIGITAL TRANSISTORS
    Text: Introduction Introduction This data book provides data sheets for all leaded transistors that are manufactured by R O H M Co.,Ltd. All transistors are manufactured with R O H M ’s unique technology that provides a class of devices that are highly reliable. They are extremely compact to allow for high density mounting


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    PDF

    ali 3602

    Abstract: AC digital voltmeter using 7107 104j capacitor Y4W diode y4w transistor digital voltmeter using IC 7107 b082 op s 2 umi 1A 250V ali 3602 ic MF CAPACITOR 100v
    Text: ELECTRONIC MEASUREMENTS INC. Instruction Manual for EXX Series 60 Watt DC Power Supply Models: EXX EXX EXX EXX 7-6 15-4 20-3 30-2 EXX 60-1 EXX 120-0.5 EXX 250-0.25 T M -6 0 0 0 -E M INSTRUCTION MANUAL ABOUT THIS MANUAL About This Manual This manual contains user information for the EXX Series DC power supply. It provides information about


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    TM-6000-EM DS127-DS129 PC-6802-F ali 3602 AC digital voltmeter using 7107 104j capacitor Y4W diode y4w transistor digital voltmeter using IC 7107 b082 op s 2 umi 1A 250V ali 3602 ic MF CAPACITOR 100v PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC PHOTOCOUPLER PS2802-1 ,PS2802-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE SOP PHOTOCOUPLER -N E P O C S e rie s - DESCRIPTION T he PS2802-1 and P S 2 8 0 2 -4 are o p tica lly c o u p le d iso lato rs silico n d a rlin g to n -co n n e cte d photo tra n sisto r in a p la stic SO P fo r


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    PS2802-1 PS2802-4 PS2802-1 16-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC PHOTOCOUPLER PS2806-1 ,PS2806-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE SOP PHOTOCOUPLER -N E P O C S e rie s - DESCRIPTION T he PS2806-1 and P S 2 8 0 6 -4 are o p tica lly c o u p le d iso lato rs con ta in in g G aA s light em ittin g d iod es and an NPN


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    PS2806-1 PS2806-4 PS2806-1 16-pin PDF

    BUS48

    Abstract: 5609 5609 transistor 2N6546 2N6547 CCC6547
    Text: 6115950 MICROSEMI CORP/POWER 02E □5 p e j 00505 T '3 3 '1 3 ¡3 1 1 5 ^ 5 0 o n c m s o s ì CCC6547 TPTCÎ TECHNOLOGY 15 A, 850 V, NPN Power Transistor Chip • T riple Diffused, Glass Passivated ■ Contact M etallization: B ase and em itter-alum inum


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    CCC6547 12-mil thickness-10 2N6546 2N6547 BUS48 BUS48 5609 5609 transistor CCC6547 PDF

    5609

    Abstract: 5609 transistor 2N6676 2N6677 2N6678 CCC6678
    Text: 61 159 50 MICR OS EMI 02E 0 0 5 0 7 CORP/POWER T'33- 3 D DE jb llS ^ S O 0000507 5 | 05 CCC6678 TECHNOLOGY 15 A, 650 V, NPN Power Transistor Chip • E pitaxial D iffused, Glass Passivated ■ Contact M etallization: B ase and em itter-alum inum Collector (Al-Ti-Ni-Au


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    CCC6678 emitter-15-mil thickness-18 2N6676 2N6677 2N6678 5609 5609 transistor 2N6678 CCC6678 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6115950 MI CRO SE MI 02E CORP/POWER □a 00516 D -r -3 3 -2 .9 D E l b l l S ^ S D 0 0 DD5 1 b 3 CCC10021A T X C J TECHNOLOGY 60 A, 350 V, NPN Darlington Power Transistor Chip • T riple Diffused, Glass Passivated ■ Contact M etallization: Base and em itter-alum inum


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    CCC10021A itter-15-m thickness-12 10020/M J10021 10021/M J10021 PDF

    all diodes ratings

    Abstract: No abstract text available
    Text: CONTENTS SMALL-SIGNAL DEVICES Introduction .2 BIPOLAR TRANSISTORS Introduction .26 Datasheets .27


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: G lossary SI technologies 7.49 GLOSSARY A c tiv e Co m p o nen t: An electronic com ponent such as an 1C, transistor, or diode. A c tiv e Trim : The trim m in g of a circu it element resistor to obtain a specific functional A lu m in a : Alum inum Oxide. The prim ary com pound in Alum ina (ceram ic) substrates.


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    PDF

    TRANSISTOR BJ 042

    Abstract: No abstract text available
    Text: -Jolitron ÄTTÄIL© Devices. Inc. MEDIUM VOLTAGE, MEDIUM POWER CHIP NUM BER NPN EPI BASE POWER TRANSISTOR c rfl c 'l CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrom e Nickel Silver" also available


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    37mra) 305mm) 300pF 300pF 2N3716, 2N5303, 2N5881, 2N5882 TRANSISTOR BJ 042 PDF