Untitled
Abstract: No abstract text available
Text: User's Guide SNVU193A – October 2012 – Revised April 2013 AN-2281 LMR61428 Evaluation Module 1 Introduction The LMR61428 evaluation module is designed to provide the power supply design engineer with a fully functional regulator design. The evaluation module takes the input from a single Li-Ion battery and boosts
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SNVU193A
AN-2281
LMR61428
500mA.
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DS1973
Abstract: DS1973-F3 DS1973-F5 DS2433 DS9092 DS9093A DS9093RA DS9096P DS9101 Maxim date code
Text: 19-4889; Rev 8/09 DS1973 4Kb EEPROM iButton SPECIAL FEATURES COMMON iButton FEATURES • • 4096 bits Electrically Erasable Programmable Read Only Memory EEPROM Overdrive mode boosts communication speed to 142kbps 256-bit scratchpad ensures integrity of data
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DS1973
142kbps
256-bit
64-bit
48-bit
DS1973
DS1973-F3
DS1973-F5
DS2433
DS9092
DS9093A
DS9093RA
DS9096P
DS9101
Maxim date code
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tda4864
Abstract: zero crossing detector mosfet MUR115 1N4937 ICE1PD165G IEC555 active harmonic filter infineon MOSFET parameter test
Text: Infineon Technologies preliminary ICE1PD165G Power Factor Controller + Cool- MOS: BoostSET IC for High Power Factor and low THD •=IC for sinusoidal line-current consumption •=Controller and CoolMOS within one package •=P-DSO-16-10 •=Power factor achieves nearly 1
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ICE1PD165G
P-DSO-16-10
0-150V
1N4937
MUR115
TDA4864
tda4864
zero crossing detector mosfet
MUR115
1N4937
ICE1PD165G
IEC555
active harmonic filter
infineon MOSFET parameter test
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iButton Chips
Abstract: DS9092 DS1995 DS1996 DS9093F DS9093RA DS9101 UL913
Text: DS1995 DS1995 16Kbit Memory iButtonTM F5 MICROCANTM SPECIAL FEATURES • 16384 bits of read/write nonvolatile memory • 256–bit scratchpad ensures integrity of data transfer • Overdrive mode boosts communication to 142k bits 5.89 0.36 0.51 per second
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DS1995
16Kbit
000000FBC52B
DS1996
iButton Chips
DS9092
DS1995
DS9093F
DS9093RA
DS9101
UL913
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7811a
Abstract: mosfet firing circuit transformer calculation IR1175 IRFS31N20D MUR120 gate drive pulse transformer
Text: The IR1175: A Novel Integrated Controller For Synchronous Rectifiers Boosts Supply Efficiency by Edgar Abdoulin , International Rectifier Corporation 233 Kansas St. El Segundo, California 90245 ABSTRACT This paper discusses a novel method for controlling power MOSFETs used as synchronous rectifiers in
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IR1175:
IR1175)
7811a
mosfet firing circuit
transformer calculation
IR1175
IRFS31N20D
MUR120
gate drive pulse transformer
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356-pin
Abstract: T1000 video server silicon power 2GB Tarari PCIE1
Text: Product Brief Tarari T1000 Content Processors Video Server, and VTR Applications F e at u r e s n RAM-Less Operation – Shares host memory at sub 1Gb/s – no directly attached RAM required n Single RAM Operation – Single attached RAM boosts performance
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T1000
100Mbps
PB07-040
356-pin
T1000
video server
silicon power 2GB
Tarari
PCIE1
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1499 LV56081GP Bi-CMOS LSI Charge Pump Power Supply for CCD http://onsemi.com Overview The LV56081GP is charge pump power supply for CCD. Functions • The charge pump boosts the +3.3V input by multiplying with +6, then by -3 to regulate the voltage to the specified
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ENA1499
LV56081GP
LV56081GP
A1499-7/7
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AVAL DATA PKW 1100 prom Programmers
Abstract: AVAL DATA PKW 1100 pkw1100 PKW-1100 PKW 1100 prom Programmer AVAL DATA rx1 PKW-1100-E RX-40 PROM programmers
Text: PROM PROGRAMMERS AVAL DATA PKW-1100-E + RX-1, RX-5, RX-40 • ■ ■ ■ ■ ■ ■ Optimized firmware boosts performance Automatic device identification Algorithms maximize yield Adaptable to suit requirements Embedded menus streamline operation Powerful command set
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PKW-1100-E
RX-40
PKW-1100
AVAL DATA PKW 1100 prom Programmers
AVAL DATA PKW 1100
pkw1100
PKW 1100 prom Programmer
AVAL DATA rx1
PKW-1100-E
RX-40
PROM programmers
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R3041
Abstract: R3051 R3052 R3081
Text: N E W S R E L E A S E FOR IMMEDIATE RELEASE FOR FURTHER INFORMATION: Caroline Phillips, Public Relations Manager 408 492-8620 Bob Rowe, Director of RISC Marketing (408) 492-8631 IDT BOOSTS SPEED AND OFFERS SMALL OUTLINE PACKAGING OPTIONS FOR THE R3041 RISController
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R3041
84-pin
100-pin
RV3041.
R3051
R3052
R3081
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Untitled
Abstract: No abstract text available
Text: LE AVAILAB DS1996 64Kb Memory iButton SPECIAL FEATURES • • 65,536 bits of read/write nonvolatile memory Overdrive mode boosts communication speed to 142 kbits per second 256-bit scratchpad ensures integrity of data transfer Memory partitioned into 256-bit pages for
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DS1996
256-bit
64-bit
48bit
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an3627
Abstract: LDO 4A 4A TRANSISTOR APP3627 MAX1735 TIP42B transistor a transistor
Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: LDO regulator, PECL, PECL-termination circuit, low-dropout linear regulator Sep 25, 2005 APPLICATION NOTE 3627 Modified LDO Regulator Sinks PECL-Termination Current Abstract: Adding a transistor to a standard PECL-termination circuit boosts the sink current to 4A.
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400mA--enough
400mA.
com/an3627
MAX1735:
AN3627,
APP3627,
Appnote3627,
an3627
LDO 4A
4A TRANSISTOR
APP3627
MAX1735
TIP42B
transistor
a transistor
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AN1153
Abstract: APP1153 MAX1967 voltage-mode pwm
Text: Maxim > App Notes > Power-supply circuits Keywords: input voltage efficiency, conversion efficiency, input boost, step-down controller, buck controller, charge pump Jul 29, 2002 APPLICATION NOTE 1153 Simple circuit boosts a 3V input and improves efficiency
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MAX1967,
MAX1967
100kHz
com/an1153
AN1153,
APP1153,
Appnote1153,
AN1153
APP1153
voltage-mode pwm
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current boosting transistor for regulators
Abstract: AN295 APP295 LM78L05 MAX1616 AN-295
Text: Maxim > App Notes > Power-supply circuits Keywords: emitter-follower output stage, linear regulator, low-dropout regulator, LDO, DRAM, low quescient current, low IQ Jun 26, 2000 APPLICATION NOTE 295 Emitter-follower boosts linear regulator's output current
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MAX1616
MAX1616
com/an295
AN295,
APP295,
Appnote295,
current boosting transistor for regulators
AN295
APP295
LM78L05
AN-295
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Untitled
Abstract: No abstract text available
Text: Low-Bias-Curreirt, High-Stability JFET Operational Amplifier OP-41 ANALOG DEVICES FEATURES • • • • • • • • The OP-41's cascode input stage boosts CMR to over lOOdB, improves CMR linearity, and stabilizes bias current with chang ing common-mode voltage. The linear common-mode rejection
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OP-41
OP-41
100dB
750mA
25pV/V,
MAT-02
2N4416
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1995L
Abstract: No abstract text available
Text: DS1995 DS1995 1 6Kblt Memory {Button SEMICONDUCTOR F5 MICROCAN™ SPECIAL FEATURES • 16384 bits of read/write nonvolatile m em ory • 2 5 6 -b it scratchpad ensures integrity of data transfer 0.51 • Overdrive m ode boosts com m unication to 142k bits
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DS1995
DS1995
DS1996
1995L
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Untitled
Abstract: No abstract text available
Text: Panasonic For Communications Equipment MN86074 Image Processing LSI • Overview The MN86074 boosts image quality by applying various image processing techniques to the analog signal from an image sensor. Features include correction of laser printer dot spreading at the pixel level, processing to
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MN86074
MN86074
64-gradation,
256-Kbit
QFH084-P-1212
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Untitled
Abstract: No abstract text available
Text: DS1996 DS1996 64Kbit M em ory {B utton SEMICONDUCTOR F5 M ICR O C AN ™ SPECIAL FEATURES • 65536 bits of read/write nonvolatile m em ory • Overdrive m ode boosts com m unication speed to 142k bits per second 0.51 • 2 5 6 -b it scratchpad ensures integrity of data transfer
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DS1996
64Kbit
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Untitled
Abstract: No abstract text available
Text: Signetics 2960 Error D etection a n d Correction EDC Unit Product Specification Logic Products FEATURES • Boosts Memory Reliability — Corrects all single-bit errors. Detects all double and some triple-bit errors. Reliability of dynamic RAM systems is
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60-fold.
64-Bit
L003750S
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29C60
Abstract: No abstract text available
Text: a Am29C60A Advanced Micro Devices CMOS Cascadable 16-Bit Error Detection and Correction Unit DISTINCTIVE CHARACTERISTICS Boosts Memory Reliability Corrects all single-bit errors. Detects all double- and some triple-bit errors. Reliability of dynamic RAM systems is increased more than sixty-fold.
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Am29C60A
16-Bit
Am29C60
KS000010
WF001521
PF002830
29C60
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Untitled
Abstract: No abstract text available
Text: Am2960/Am2960-1 /Am2960A Advanced Micro Devices Cascadable 16-Bit Error Detection and Correction Unit DISTINCTIVE CHARACTERISTICS Boosts Memory Reliability Corrects all single-bit errors. Detects all double and some triple-bit errors. Very High Speed Perfect for MOS microprocessor, minicomputer, and
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Am2960/Am2960-1
/Am2960A
16-Bit
Am2960
Am2960
KS000010
Am2960/Am2960-1/Am2960A
WF001521
IC000883
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Untitled
Abstract: No abstract text available
Text: y k iy j x iv k i Bridge-Battery B a ck u p Controllers for N o t e b o o k s The M AX1612/M A X1613 m anage the b rid g e battery som etim es called a hot-swap or auxiliary battery in portable system s such as notebook com puters. They feature a step-up DC-DC converter that boosts 2-cell or
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AX1612/M
X1613
28lAD
24lAC
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AM29C60A
Abstract: 0b54
Text: Am29C60A A dvanced Micro D evices CMOS Cascadable 16-Bit Error Detection and Correction Unit DISTINCTIVE CHARACTERISTICS • • Boosts Memory Reliability Corrects all single-bit errors. Detects all double- and some triple-bit errors. Reliability of dynamic RAM
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Am29C60A
16-Bit
Am29C60
ks000010
WF001521
PF002830
0b54
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N2960N
Abstract: N2960I
Text: Signetics 2960 Error Detection and Correction EDC Unit Product Specification Logic Products FEATURES • Boosts Memory Reliability — Corrects all single-bit errors. Detects all double and some triple-bit errors. Reliability of dynamic RAM systems is Increased more than 60-fold.
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60-fold.
64-Bit
LD03T8IS
N2960N
N2960I
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hamming code
Abstract: No abstract text available
Text: ADVANCED MICRO DEVICES b4C D • 0557S2S OGlbTOl S ■ I r=vs-/7 Am29360 32-Bit Error Detection and Correction Unit CO ' ADVANCED INFORMATION DISTINCTIVE CHARACTERISTICS Boosts m em ory reliability - C orrects all single bit errors - Detects all double and som e triple bit errors
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02S7S25
Am29360
32-Bit
32-blts
32-blts
BD003160
5765A
hamming code
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