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Abstract: No abstract text available
Text: Systems in Silicon Contact Information: Eurosoft UK Ltd. +44 1202 297315 4th Floor, Hanover House 136 Old Christchurch Road Bournemouth, BH1 1NL, United Kingdom FAX: BBS: E-mail: URL: +44 1202 558280 (408) 982-9044 biossup@eurosoft.demon.co.uk www.eurosoft-uk.com
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SOP 8 200MIL
Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
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D-85622
REJ01C0001-0100Z
SOP 8 200MIL
serial flash 256Mb fast erase spi
TM 1628 IC SOP
Micron 512MB NOR FLASH
HN29V1G91T-30
HN58C1001FPI-15
M5M51008DFP-70HI
256mb EEPROM Memory
CSP-48
TSOP 28 SPI memory Package flash
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HN58X2508FPIE
Abstract: HN58X2508I HN58X2508TIE HN58X2516FPIE HN58X2516I HN58X2516TIE
Text: HN58X2508I HN58X2516I Serial Peripheral Interface 8k EEPROM 1024-word x 8-bit 16k EEPROM (2048-word × 8-bit) Electrically Erasable and Programmable Read Only Memory REJ03C0222-0200 Rev.2.00 Aug.19.2004 Description HN58X25xxx Series is the Serial Peripheral Interface (SPI) EEPROM (Electrically Erasable and
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HN58X2508I
HN58X2516I
1024-word
2048-word
REJ03C0222-0200
HN58X25xxx
32-byte
HN58X2508FPIE
HN58X2508I
HN58X2508TIE
HN58X2516FPIE
HN58X2516I
HN58X2516TIE
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Untitled
Abstract: No abstract text available
Text: M65665DSP PICTURE-IN-PICTURE SIGNAL PROCESSING REJ03F0012-0100Z Rev.2.00 Sep.04.2003 Description The M65665DSP is a PIP Picture in Picture signal processing LSI, whose sub-picture input is composite signal or component signals(Y/C or Y/U/V) for NTSC , PAL-M , PAL-N. The built-in field memory (168k-bit RAM) , V-chip
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M65665DSP
REJ03F0012-0100Z
M65665DSP
168k-bit
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Untitled
Abstract: No abstract text available
Text: M65665CFP/SP PICTURE-IN-PICTURE SIGNAL PROCESSING REJ03F0011-0100Z Rev.2.00 Sep.04.2003 Description The M65665CFP/SP is a PIP Picture in Picture signal processing LSI, whose sub-picture input is composite signal or component signals(Y/C or Y/U/V) for NTSC.
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M65665CFP/SP
REJ03F0011-0100Z
M65665CFP/SP
168k-bit
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Untitled
Abstract: No abstract text available
Text: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)
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2SK2980
REJ03G1061-0400
ADE-208-571B)
PLSP0003ZB-A
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Abstract: No abstract text available
Text: M54678FP 2-Phase Stepper Motor Driver REJ03F0046-0100Z Rev.1.0 Sep.19.2003 Description The M54678FP is a semiconductor integrated circuit designed for stepper motor driver used to printer, PPC and facsimile. Features • • • • • • Wide supply voltage range 10 – 35V
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M54678FP
REJ03F0046-0100Z
M54678FP
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Untitled
Abstract: No abstract text available
Text: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting
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2SK3390
REJ03G0208-0400
PLSS0003ZA-A
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Abstract: No abstract text available
Text: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are
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NX5522
R08DS0029EJ0100
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Abstract: No abstract text available
Text: FX30KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1446-0200 Previous: MEJ02G0276-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –60 V rDS(ON) (max) : 54 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 55 ns
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FX30KMJ-06
REJ03G1446-0200
MEJ02G0276-0101)
PRSS0003AB-A
O-220FN)
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ha17903
Abstract: No abstract text available
Text: HA17903 Series Dual Comparator REJ03D0687-0100 Previous: ADE-204-048 Rev.1.00 Jun 15, 2005 Description HA17903 are comparators designed for car use and control system use. They provide wide voltage range with single power source, and the change of supply current is small, because it is
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HA17903
REJ03D0687-0100
ADE-204-048)
Unit2607
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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do-900
Unit2607
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Abstract: No abstract text available
Text: PreliminaryData Sheet PD5754T7A R09DS0012EJ0100 Rev.1.00 Dec 22, 2010 SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Gain and Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output
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PD5754T7A
R09DS0012EJ0100
PD5739T7A
28-pin
28-pnesas
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Abstract: No abstract text available
Text: M64893AGP SERIAL INPUT PLL FREQUENCY SYNTHES IZER FOR TV/VCR REJ03F0008-0100Z Rev.1.00 Jul.25.2003 Description The M64093FP is a semiconductor integrated circuit consisting of PLL frequency synthesizer for TV/VCR using BiCMOS process. It contains prescaler with operating up to. 1.0 GHz, 4 band driver and a tuning amplifier for direct
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M64893AGP
REJ03F0008-0100Z
M64093FP
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Abstract: No abstract text available
Text: M51955A,B/M51956A,B Voltage Detecting, System Resetting IC Series REJ03D0777-0300 Rev.3.00 Sep 18, 2007 Description M51955A,B/M51956A,B are semiconductor integrated circuits for resetting of all types of logic circuits such as CPUs, and has the feature of setting the detection voltage by adding external resistance.
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M51955A
B/M51956A
REJ03D0777-0300
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TH05-3H103F
Abstract: No abstract text available
Text: Datasheet R2A20055NS R03DS0074EJ0100 Rev.1.00 May 7, 2013 Lithium-Ion Battery Charger IC Description The R2A20055NS is a semiconductor integrated circuit designed for Lithium-ion battery chargers at spacelimited portable applications. The R2A20055NS simply controls to charge a battery with a small number of
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R2A20055NS
R03DS0074EJ0100
R2A20055NS
100mA/500mA)
TH05-3H103F
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Abstract: No abstract text available
Text: HSD226 Silicon Schottky Barrier Diode for High Speed Switching REJ03G0603-0400 Rev.4.00 Feb 06, 2007 Features • Low Power consumption Low reverse leak current and high speed (Low capacitance). • Lineup of Environmental friendly Halogen free type (HSD226-N)
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HSD226
REJ03G0603-0400
HSD226-N)
HSD226-N
PUSF0002ZB-A
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Untitled
Abstract: No abstract text available
Text: HD74HCT640 Octal Bus Transceivers with inverted 3-state outputs Octal Bus Transceivers (with 3-state outputs) REJ03D0672–0300 (Previous ADE-205-562A) Rev.3.00 Mar 30, 2006 Description The HD74HCT640 has one active low enable input (G), and a direction control (DIR). When the DIR input is high,
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HD74HCT640
REJ03D0672â
ADE-205-562A)
HD74HCT640
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Abstract: No abstract text available
Text: Preliminary Data Sheet PA2811T1L R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 MOS FIELD EFFECT TRANSISTOR Description The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
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PA2811T1L
R07DS0191EJ0100
PA2811T1L
PA2811T1L-E1-AY
PA2811T1L-E2-AY
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