Untitled
Abstract: No abstract text available
Text: 2N 2906 PN 2906 M • 2N2906A • PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SFEET SWITCHING APPLICATIONS. THEY ARE
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2N2906A
PN2906A
2TT2906,
2N2906A,
PN2906,
PN2906A
2N2221,
2N2221A,
PN2221
PN2221A
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PDF
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Untitled
Abstract: No abstract text available
Text: MPS 6520 thru’ MPS 6523 COMPLEMENTARY r- SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS
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MPS6520,
MPS6521
MPS6522,
MPS6523
MPS6520
MPS6522
100mA
350mW
Box69477,
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Untitled
Abstract: No abstract text available
Text: 2N3905 2N3906 PNP SILICON PLANAR EPITAXIAL TRANSI STOBS THE 2N3905 AND 2N3906 ABE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLIMENTARY TO 2N3903 AND 2N3904 RESPECTIVELY.
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2N3905
2N3906
2N3905
2N3906
2N3903
2N3904
T0-92A
100MHz
100kHz
100juA
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PDF
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bf314
Abstract: No abstract text available
Text: BF 314 NPN SILICON Ik lJ. PLANAR UBI HIGH FREQUENCY EPITAXIAL J TRANSISTOR m n mj»4 * ? j i MECHANICAL OUTLINE GENERAL DESCRIPTION ; The BF314 is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration.
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BF314
O-92F
100MHz
BOX69477
J0321
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PDF
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MPS6522
Abstract: mps-6522 MPS6520 MPS6521 MPS6523
Text: il il u iv ir w wv/<.w COMPLEMENTARY SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS
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MPS6520,
MPS6521
MPS6522,
MPS6523
MPS6520
MPS6522
100mA
350mW
3-8S343373-898334-
mps-6522
MPS6521
MPS6523
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PDF
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BC238 h parameter
Abstract: MH 0810C hFE Group 8100C ME8100 MH8100 MH0810 BC308 1I103 BC238
Text: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3 - 5 W AF OUTPUT MICRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed fo r the output stages of 3 - 5 watt audio amplifiers. They are also suitable for
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MH8100
MH0810
O-220B
10rnS)
100-ohms
MH8100,
MH0810,
BC238,
BC338,
BC308,
BC238 h parameter
MH 0810C
hFE Group
8100C
ME8100
MH8100
MH0810
BC308
1I103
BC238
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2N5818
Abstract: 2N5815 2N5814 2N5816 2N5819 2N5810 2N5811 BOX69477
Text: ! I/ * • 2N5819 ■ /' 2N5810 • th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F WITH X-67 LEAD PREFORMED HEAT SINK THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.
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2N5810
2N5819
2N5819
O-92F
2N5810,
2N5811,
2N5814,
2N5818
2N5815
2N5814
2N5816
2N5811
BOX69477
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PDF
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3906 pnp
Abstract: 2N3903 2N3904 2N3905 2N3906 BOX69477 2N3906 MICRO ELECTRONICS E3040
Text: Vj.sl 2N3905 'i i /• 2N 3906 PNP SILICON PLANAR EPITAXIAL TRáNSISTOBS . » . . * •••• . • s . . . . . k. . V . ’ V • . t, *. . i . •• . . . . . . <y -
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2N3905
2N3906
2N3903
2N3904
T0-92A
200mA
350mW
PA905
3906 pnp
BOX69477
2N3906 MICRO ELECTRONICS
E3040
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PDF
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PN3563
Abstract: PN5130 BOX69477 PN5132
Text: PN 3563 PN 5130 PN 5132 NPN SILICON RF SMALL SIGNAL TRANSISTORS CASE TO-92A THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS. PN3565 PN5130 PN5132 «V SBC PN3563 PN5130 ' PN5132 ABSOLUTE MAXIMUM RATINGS Collector-Base ^oltage
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PN5132
O-92A
PN3563
PN5130
PN3563
PN5130
PN513
250mW
BOX69477
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PDF
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BC485
Abstract: BC487 transistors BC 487 BC489
Text: B C 485 B C 487 B C 489 NPN SILICON PLANAR EPITAXIAL TRANSISTORS IVIICFRD ELEC CASE T0-92F BC485, BC487 and BC489 are NPN silicon planar epitaxial transistors designed for use as high voltage high current driver and output transistors. ABSOLUTE MAXIMUM RATINGS
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BC485,
BC487
BC489
I0-92F
BC485
625mW
500mA
100mA
transistors BC 487
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PDF
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2N5372
Abstract: 2N5369 2N5373 2N5368 2N5370 2N5371 2N5374 2N5375 2N5568 NPN, PNP for 500ma, 30v
Text: 2N 5368 through 2N 5375 ^1 COMPLEMENTARY SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES _ ;SF A THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. CASE TO-92F CEB 2N 5368 ffPN
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2N5368
2N5375
O-92F
2N5568
2N5369
2N5370
500mA
2N5372
2N5373
2N5374
2N5371
NPN, PNP for 500ma, 30v
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BC337
Abstract: BC338 BC327 BC328 BC337 hfe PNP BC327
Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS CASE TO-92F THE BC337 » BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,
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BC337,
BC338
BC327,
BC328
O-92F
BC337
625mW
BC327
BC337 hfe
PNP BC327
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PDF
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ME0412
Abstract: 8822 TRANSISTOR me0411 ME0413 20MHZ 4102 transistor ME4103
Text: SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO ELECTRONICS FEATURES • H ig h G a i n h p g . 1 0 0 - 6 0 0 • E x c e lle n t L i n e a r i t y F ro m lO ^ A • H ig h B re a k d o w n V o l t a g e B V
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60Vmin
ME0411
ME0412
ME0413
200mW
425mW
8822 TRANSISTOR
ME0413
20MHZ
4102 transistor
ME4103
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PDF
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BCy71
Abstract: BCY70 vce 1v BCY72
Text: BCY70.1.2 PNP /* SILICON TRANSISTORS TO-18 The BCY70, BCY71 and BCY72 are PNP silicon planar epitaxial transistors designed for general purpose amplifier and switching applications. CBE ABSOLUTE MAXIMUM RATINGS BCY70 BCY71 BCY72 Collector-Base Voltage VcBO
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BCY70,
BCY71
BCY72
BCY70
BCY72
200mA
350mW
BCY71
vce 1v
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PDF
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bc727
Abstract: bc728
Text: THE BC727, BC728 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR IJNIYERSAL APPLICATIONS. THE BC727,BC728 ARE COMCOMPLEMENTARY TO THE NPN TYPE BC737, BC738 RESPECTIVELY. CASE TO-92A "EBC ABSOLUTE MAXIMUM RATINGS
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BC727,
BC728
BC737,
BC738
O-92A
BC727
625mW
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N2102 • 2N4036 COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 THE 2N210? NPN AND 2N4056(PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS. C E B
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2N2102
2N4036
2N210?
2N4056
2N21Q2
150mA
150mA
8100B
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PDF
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2N5819
Abstract: No abstract text available
Text: *I I/ • ¡ 2N5810 2N5819 th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.
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2N5810
2N5819
O-92F
2N5810
2N5819
O-92F
2N5811,
2N5810,
2N5814,
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PDF
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Untitled
Abstract: No abstract text available
Text: MPS - A 43 MPS - A 42 NPN SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS K *a I CASE TO-92A THE MPS-A42, MPS-A43 ARE NPN SILICON PLANAR TRANSISTORS FOR GENERAL PURPOSE HIGH VOLTAGE APPLICATIONS SUCH AS TV VIDEO OUTPUT STAGE AND GAS DISCHARGE TUBE DRIVER.
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O-92A
MPS-A42,
MPS-A43
MPS-A42
MPS-A43
100mA
500mA
625mW
BOX69477
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PDF
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MGB31TAH
Abstract: No abstract text available
Text: CKO MGB31TAH ULTRA il Kill BRIGHTNESS GREEN LED LAMP DESCRIPTION MGB31TAH is an AlGalnP super green LED lamp encapsulated in a 3mm diameter, clear transparent lens. * No scale * ToL : +/- 0.3mm ABSOLUTE MAXIMUM RATINGS Power Dissipation @ Ta=25°C Forward Current, DC IF
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MGB31TAH
MGB31TAH
-30to
100jiA
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PDF
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MPSA55
Abstract: A06 NPN mpsa56 mpsa06 MFS-A05 MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS A06
Text: MPS-A06 MPS-A56 MPS-A05 MPS-A55 W'ß\ COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE TO-92A THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE MPS-A05,
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MPS-A05
MPS-A06
MPS-A55
MPS-A56
MPS-A05,
MPS-A06,
MPS-A55Â
MPSA55
A06 NPN
mpsa56
mpsa06
MFS-A05
MPS-A05
MPS-A55
MPS A06
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PDF
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BC758
Abstract: BC727 BC728 BC737 BC738
Text: ÖC 737 • BC 738 NPN SILICON AF MEDIUM POWER TRANSISTORS sj- ' 4 'è é i ispr •*' $ THE BC737, BC738 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC737, BC738 ARE COM
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OCR Scan
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BCT37,
BC738
BC737,
BC727,
BC728
O-92A
BC737
BC758
BC727
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PDF
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Untitled
Abstract: No abstract text available
Text: CRO MGB31TAH ULTRA il K ill BRIGHTNESS GREEN LED LAMP DESCRIPTION MGB31TAH is an AlGalnP super green LED lamp encapsulated in a 3mm diameter, clear transparent lens. * No scale * ToL : +/- 0.3mm ABSOLUTE MAXIMUM RATINGS Power Dissipation @ Ta=25°C Forward Current, DC IF
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MGB31TAH
MGB31TAH
-30to
10QDissipation
Box69477
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PDF
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200 watt audio ic
Abstract: ic 8050 8050h
Text: CRÛ 8050 G E N E R A L D E S C R IP T IO N :- •4 H ie 8 0 5 0 is an NPN epitaxial silicon planar transistor designed for use in the audio ou tp ut stage and converter/inverter circuits. Complem entary to 8550. TO-92A R A T IN G S Note 1 Maximum Temperatures
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100mA
Box69477,
200 watt audio ic
ic 8050
8050h
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PDF
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BC358
Abstract: BC327 BC328 BC337 BC338
Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 1 . CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS: WELL AS FOR UNIVERSAL APPLICATIONS. THE BC357, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,
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BC337,
BC338
BC327,
BC328
O-92F
BC337
625mW
BC358
BC327
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PDF
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