Photo diode TFK S 186 P
Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission
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BPW-20R
Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200
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near IR sensors with daylight filter
Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
Text: Vishay Telefunken Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into
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near IR sensors with daylight filter
Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
Text: Vishay Semiconductors Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into
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w10MW)
near IR sensors with daylight filter
luxmeter osram
BPW20
photoconductive cells characteristic
dc voltmeter circuit diagrams
photodiode application luxmeter
BPW 23 nf
application luxmeter
short distance measurement ir infrared diode
luxmeter detector
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S288P
Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of
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fototransistor BPW 39
Abstract: fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor
Text: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS SICHERHEITSHINWEISE SAFETY INSTRUCTIONS Osram Opto Semiconductor IRED erreichen mit ihrer hohen Strahlungsleistung heute z. T. bereits die Helligkeit von Glühlampen und können die Grenzen der Klasse 1 nach IEC 825.1 bzw.
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EN60825-1
GETY6091
GPLY6899
GPLY6880
fototransistor BPW 39
fototransistor BPX 81
opto P180
marking s4 diode smt
SFH 300-3/4 datasheet
OSRAM IR emitter IRL
P3596
foto transistor
SFH 229
foto sensor
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
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Photo diode TFK S 186 P
Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Text: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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TFK 680 CNY 70
Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.
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CL9100
Abstract: 27mhz remote control receiver ic rx 2b circuit FO AVIA-GTX k1525a AVIA GTX CL9110 aviadmx avia avia-dmx Avia-500
Text: BACK AViA-DMX MPEG-2 Transport Demultiplexer AViA-GTX Graphics Transport I/O User’s Manual 92-9210-301 C-Cube Microsystems This document is preliminary and is still undergoing technical review. While the information is believed to be accurate, it may contain errors.
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int32)
CL9100
27mhz remote control receiver ic rx 2b circuit FO
AVIA-GTX
k1525a
AVIA GTX
CL9110
aviadmx
avia
avia-dmx
Avia-500
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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Untitled
Abstract: No abstract text available
Text: HB56HW164EJN-6B/7B 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-573 Z Preliminary - Rev.0.0 Apr. 18,1996 Description The HB56HW164EJN belongs to the 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56HW164EJN-6B/7B
576-word
64-bit
ADE-203-573
HB56HW164EJN
16-Mbit
HM51W18165BJ)
24C02)
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Untitled
Abstract: No abstract text available
Text: XRD4417 Linear CCD Signal Processor with 10-Bit ADC and Serial Interface FEATURES APPLICATIONS • 1.54 MSPS Pixel-to-Pixel Sample Rate • Color and Gray Scale Flat Bed Scanners • Serial Output 10-Bit ADC • Color and Gray Scale Sheet Fed Scanners •
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XRD4417
10-Bit
150mW
XRD4417
200mA
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LC272H5
Abstract: d4186 BD4175KVT 51R2J-2-GP 10KR2F-2-GP WISTRON BCM5781 1R3J SCD01U16V2KX-3GP Wistron Corporation
Text: 10 9 8 Jan 13 '06 7 Intel Yonah NV/LV/ULV Processor 3,4,5 Clock Generator CK-410M 19 H Keyboard Light AGTL+ FSB UNBUFFERED DDR2 SODIMM Normal Socket 15 G Channel A Thermal Sensor LM26 Channel B I2C Bus / SM Bus E USB 2.0 2+2+2+2 OP AMP MAX9750 42,43 Ultra ATA/100/66/33
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CK-410M
533/667MHz
200-PIN
05222-SC-0113
400/533/667MHz
CH7013
IEEE1394
MAX1989
PCI4512
IEEE1394
LC272H5
d4186
BD4175KVT
51R2J-2-GP
10KR2F-2-GP
WISTRON
BCM5781
1R3J
SCD01U16V2KX-3GP
Wistron Corporation
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Measurement Techniques
Abstract: measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note
Text: Measurement Techniques www.vishay.com Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical
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31-Jul-12
Measurement Techniques
measurem
TEMD5100X01
photodiode application luxmeter
BPW20RF
BPW34 application note
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram
Text: Measurement Techniques Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical
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27-Aug-08
BPW34 application note
APPLICATION NOTE BpW34
BPW34 osram
BPW41N IR DATA
phototransistor application lux meter
photodiode application luxmeter
pin configuration bpw34
BPW41N IR
BPW20RF
BPW21R osram
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near IR sensors with daylight filter
Abstract: light sensing circuit project BPW34 application note BPW20RF
Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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TEKT5400S
TSKS5400S
2002/95/EC
2002/96/EC
TEKT5400S
2002/95/EC.
2011/65/EU.
JS709A
near IR sensors with daylight filter
light sensing circuit project
BPW34 application note
BPW20RF
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BPW20RF
Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPV11
2002/95/EC
2002/96/EC
BPV11
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
BPW20RF
BPW34 osram
phototransistor application lux meter
BPW41
BPW34 application note
BPW20RF application
BPW41N IR DATA
wi41g
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BPW46
Abstract: BPW34 osram
Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power
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VSLB3940
2002/95/EC
2002/96/EC
VSLB3940
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
BPW46
BPW34 osram
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IRT 1250
Abstract: irt 1260 Zener diode ZTK 2066 TVPO KEYBOARD CONTROLLER 8049 TVPO-2066 TVPO2066 8049 Keyboard Controller SAA 1260 CI 3060 elsys
Text: TVPO 2066 TV Controller with On-Screen Display for TV Receivers Edition August 24, 1992 6251-327-3E ITT Semiconductors TVPO 2066 Contents Page Section Title 3 1. Introduction 3 3 4 4 4 5 5 5 5 5 5 5 6 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7. 2.8. 2.9. 2.9.1.
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6251-327-3E
1N4148
BF240
IRT 1250
irt 1260
Zener diode ZTK
2066 TVPO
KEYBOARD CONTROLLER 8049
TVPO-2066
TVPO2066
8049 Keyboard Controller
SAA 1260
CI 3060 elsys
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BPW41 circuit application
Abstract: OSRAM IR emitter
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability
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VSMG3700
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
VSMG3700
2002/95/EC.
2011/65/EU.
JS709A
BPW41 circuit application
OSRAM IR emitter
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BPW34 osram
Abstract: wi41g BPW34 application note
Text: VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: p = 850 nm
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VSMY1850X01
AEC-Q101
J-STD-020
2002/95/EC
2002/96/EC
VSMY1850X01
2002/95/EC.
2011/65/EU.
JS709A
BPW34 osram
wi41g
BPW34 application note
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