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Abstract: No abstract text available
Text: BPW 20R VlSfrlAY Vishay Telefunken Silicon PN Photodiode Description BPW 20R is a planar Silicon PN photodiode in a hermetically sealed short TO -5 case, especially de signed for high precision linear applications. Due to its extremely high dark resistance, the short cir
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950nm
20-May-99
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bpw uv photodiode
Abstract: BPW20 BPW20R
Text: TELEFUNKEN Semiconductors BPW 20 R Silicon PN Photodiode Description BPW20R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the
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BPW20R
D-74025
bpw uv photodiode
BPW20
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BPW-20R
Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200
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S288P
Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of
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Photo diode TFK S 186 P
Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission
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near IR sensors with daylight filter
Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
Text: Vishay Semiconductors Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into
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w10MW)
near IR sensors with daylight filter
luxmeter osram
BPW20
photoconductive cells characteristic
dc voltmeter circuit diagrams
photodiode application luxmeter
BPW 23 nf
application luxmeter
short distance measurement ir infrared diode
luxmeter detector
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near IR sensors with daylight filter
Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
Text: Vishay Telefunken Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into
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Photo diode TFK S 186 P
Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Text: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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photodiode bpw 46
Abstract: T2-96
Text: Temic BPW46 S e iti i r o n ti u c n r s Silicon PIN Photodiode Description BPW 46 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its w aterclear epoxy the device is sensitive to visible and infrared radiation.
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BPW46
950nni
15-Jul-96
photodiode bpw 46
T2-96
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SFH2030F
Abstract: SFH505A KOM2033A SFH2030 ha1900 SFH-2030F SFH200 SFH203
Text: Photodiodes Part Number Package Outline SFH205 SFH206 Package Type Plastic. daylight filter, solder tabs Plastic. dayligh t filter. solder tabs Dark Cur rent Half Angl« VB» 1 0V nA Photo sensitivity JUB50 mn 0.5mW/ cm2 nA Radiant Senat ive Area mm* Peak
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JUB50
SFH205
SFH206
SFH206K
SFH205Q2
SFH2030F
SFH505A
KOM2033A
SFH2030
ha1900
SFH-2030F
SFH200
SFH203
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BPW34 application note
Abstract: photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R
Text: VISHAY Vishay Semiconductors Measurement Techniques Introduction Characteristics of optoelectronics devices given in data sheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be
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14-Apr-04
BPW34 application note
photodiode application luxmeter
APPLICATION NOTE BpW34
BPW34 osram
BPW20RF
BPW21R osram
phototransistor application lux meter
BPW41N
luxmeter detector
BPW21R
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Measurement Techniques
Abstract: measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note
Text: Measurement Techniques www.vishay.com Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical
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31-Jul-12
Measurement Techniques
measurem
TEMD5100X01
photodiode application luxmeter
BPW20RF
BPW34 application note
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram
Text: Measurement Techniques Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical
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27-Aug-08
BPW34 application note
APPLICATION NOTE BpW34
BPW34 osram
BPW41N IR DATA
phototransistor application lux meter
photodiode application luxmeter
pin configuration bpw34
BPW41N IR
BPW20RF
BPW21R osram
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near IR sensors with daylight filter
Abstract: light sensing circuit project BPW34 application note BPW20RF
Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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TEKT5400S
TSKS5400S
2002/95/EC
2002/96/EC
TEKT5400S
2002/95/EC.
2011/65/EU.
JS709A
near IR sensors with daylight filter
light sensing circuit project
BPW34 application note
BPW20RF
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BPW46
Abstract: BPW34 osram
Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power
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VSLB3940
2002/95/EC
2002/96/EC
VSLB3940
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
BPW46
BPW34 osram
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TRANSISTOR si 6822
Abstract: LM 3140 si 6822 transistor transistor 6822 si transistors Si 6822 lm3140 SN-72500 transistors br 6822 Siemens technische transistor 6823
Text: Technische Erläuterungen SIEMENS Allgem eines O ptoelektronische Bauelem ente haben in der m odernen Elektronik und dam it in fast allen Bereichen unseres Lebens weiten Eingang gefunden. Sie sind in hohem Maße an dem Um stellungsprozeß von Mechanik auf Elektronik beteiligt und haben, aufgrund ihrer Funktion als
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lg washing machine control circuit
Abstract: gp1uv701
Text: SHARP IR0 5 4 0 1 SPEC No. y ^ =2 5/ h g p 1 u v 7 0 q s 0 0 f -> y - x tfc ttlf Infrared Detecting unit for Remote'"Çôntroi QPllÌV70QS00F Series Specifications $n7 y “ pp Lead —Free Type * -?• #15 nBn * ^ * 7° h 7 s/< 4 ^ f I I 2 g ff * S ii §15
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V70QS00F
GP1UV70QS00F
10Opcs.
400pcs/packing
lg washing machine control circuit
gp1uv701
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BPW41 circuit application
Abstract: OSRAM IR emitter
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability
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VSMG3700
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
VSMG3700
2002/95/EC.
2011/65/EU.
JS709A
BPW41 circuit application
OSRAM IR emitter
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BPW34 osram
Abstract: wi41g BPW34 application note
Text: VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: p = 850 nm
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VSMY1850X01
AEC-Q101
J-STD-020
2002/95/EC
2002/96/EC
VSMY1850X01
2002/95/EC.
2011/65/EU.
JS709A
BPW34 osram
wi41g
BPW34 application note
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BPW34 smd
Abstract: smd resistor 8606 BPW34 application note
Text: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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VSMF4710
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
BPW34 smd
smd resistor 8606
BPW34 application note
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BPW34 application note
Abstract: No abstract text available
Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°
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VSMS3700
VEMT3700
J-STD-020
VSMS3700
AEC-Q101
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
BPW34 application note
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
Text: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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VSMF4720
VSMF4720
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
BPW34 application note
APPLICATION NOTE BpW34
lux meter calibration
RB94
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BPW34 smd
Abstract: phototransistor application lux meter BPW20
Text: VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 94 8553 Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75
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VSMY3850
J-STD-020
2002/95/EC
2002/96/EC
VSMY3850
2002/95/EC.
2011/65/EU.
JS709A
BPW34 smd
phototransistor application lux meter
BPW20
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lux meter chip
Abstract: IR Diodes BPW41N IR DATA 80085 short distance measurement ir infrared diode wi41g
Text: VSMY1850 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • Peak wavelength: λp = 850 nm • High reliability
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VSMY1850
J-STD-020
2002/95/EC
2002/96/EC
VSMY1850
2002/95/EC.
2011/65/EU.
JS709A
lux meter chip
IR Diodes
BPW41N IR DATA
80085
short distance measurement ir infrared diode
wi41g
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