BPX92
Abstract: Bpx 95 photodetector 850 nm aa3b
Text: SIEMENS BPX92 SILICO N PHOTODIODE Package D im ensions in Inches mm Chip position FEATURES * Silicon Planar Photodiode * Transparent Plastic C a se Photosensitive area 051 x 031 (1 3 x 8) ' * 0.2* (S.08 mm) Lead Sp ac in g 0 1 6 (4 ) 006 ( 2) • Low D ark Current, 1 n A
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BPX92
BPX92
Bpx 95
photodetector 850 nm
aa3b
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Untitled
Abstract: No abstract text available
Text: SIEMENS BPX92 SILICON PHOTODIODE FEATURES * Silicon Planar Photodiode * Transparent Plastic Case * 0.2" S.08 mm Lead Spacing • Low Dark Current, 1 nA Maximum Ratings O perating and Storage Tem perature R ange (To p, T3rG) -4 0 ° to +80°C Soldering Tem perature (2 m m from case bottom ), (Ts ) t£ 3 s
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BPX92
00075flfl
fl53fc
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BPX92
Abstract: No abstract text available
Text: SIEMENS BPX92 SILICON PHOTODIODE FEATURES * Silicon Planar Photodiode * Transparent Plastic Case * 0.2* 5.08 mm Lead Spacing * Low D ark Current, 1 nA Maximum Ratings DESCRIPTION The BPX 92 is a silicon planar photodiode in a transparent plastic package. Its terminals
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BPX92
BPX92
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SFH2030F
Abstract: SFH505A KOM2033A SFH2030 ha1900 SFH-2030F SFH200 SFH203
Text: Photodiodes Part Number Package Outline SFH205 SFH206 Package Type Plastic. daylight filter, solder tabs Plastic. dayligh t filter. solder tabs Dark Cur rent Half Angl« VB» 1 0V nA Photo sensitivity JUB50 mn 0.5mW/ cm2 nA Radiant Senat ive Area mm* Peak
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JUB50
SFH205
SFH206
SFH206K
SFH205Q2
SFH2030F
SFH505A
KOM2033A
SFH2030
ha1900
SFH-2030F
SFH200
SFH203
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-Fotodiode Silicon Photodiode BPX 92 5.4 1.5 1.2 0.8 0.6 0.5 0.3 spacing LO oo Photosensitive Area 1 .3 x0 .8m m Cathode GE0060I5 A pprox. w e ig h t 0.0 3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GE0060I5
fl23St
S7S75
BPX92
A23SbOS
0GS7573
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KT853
Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
3N24x
24xTX
KT853
KT850
KT853A
LTR-305D
H0A0872-n55
H0A1405-1
h0a2001
MOC70T3
HOA708-1
smd diode 825B
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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