Untitled
Abstract: No abstract text available
Text: _ bq4115Y 512Kx8 NV Pseudo SRAM Features General Description > D ata retention in the absence of power The CMOS bq4115Y is a nonvolatile pseudo sta tic RAM organized as 512K words by 8 bits. The integral control circuitry and backup battery source provide reliable nonvolatility
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bq4115Y
512Kx8
000242b
bq4115
512Kx
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Untitled
Abstract: No abstract text available
Text: BENCHMARQ_ b q 4 1 15 Y 512Kx8 NV Pseudo SRAM Features General Description >• D ata retention in th e absence of power The CMOS bq4115Y is a nonvolatile p seu d o sta tic RAM o rg a n iz e d as 512K words by 8 bits. T he integral control circuitry and backup b atte ry
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512Kx8
bq4115Y
bq4115
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CE 65 M
Abstract: No abstract text available
Text: B E N C H M A R Q _ b q 4 1 1 5 Y 512Kx8 NV Pseudo SRAM Features General Description >• Data retention in the absence of power The CMOS bq4115Y is a nonvolatile pseudo static RAM organized as 512K words by 8 bits. The integral
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OCR Scan
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512Kx8
bq4115Y
bq4115
512Kx
QQQ37n
CE 65 M
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4115Y BENCHMARQ 512Kx8 NV Pseudo SRAM Features General Description >- D ata retention in th e absence of power The CMOS bq4115Y is a nonvolatile pseudo sta tic RAM organized as 512K words by 8 bits. The integral control circuitry and backup battery source provide reliable nonvolatility
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OCR Scan
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bq4115Y
512Kx8
bq4115
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PDF
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