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    BR 8550 Search Results

    BR 8550 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    8550401FA Texas Instruments 3-Line To 8-Line Decoders/Demultiplexers 16-CFP -55 to 125 Visit Texas Instruments Buy
    8550401EA Texas Instruments 3-Line To 8-Line Decoders/Demultiplexers 16-CDIP -55 to 125 Visit Texas Instruments Buy
    85505012A Texas Instruments Octal Buffers And Line Drivers CMOS Logic With 3-State Outputs 20-LCCC -55 to 125 Visit Texas Instruments Buy
    85504012A Texas Instruments 3-Line To 8-Line Decoders/Demultiplexers 20-LCCC -55 to 125 Visit Texas Instruments Buy
    8550501RA Texas Instruments Octal Buffers And Line Drivers CMOS Logic With 3-State Outputs 20-CDIP -55 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    BR 8550 Price and Stock

    Texas Instruments TPS78550QWDRBRQ1

    LDO Voltage Regulators Automotive, 1-A high-accuracy Fixed low-dropout (LDO) linear regulator 8-SON -40 to 150
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TPS78550QWDRBRQ1 3,031
    • 1 $1.09
    • 10 $0.926
    • 100 $0.79
    • 1000 $0.653
    • 10000 $0.652
    		Buy Now

    BR 8550 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF 8550S -50mA -500mA -500mA, -20mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO:


    Original     		PDF 8550S -50mA -500mA -500mA, -20mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A - 40 V 2. COLLECTOR Collector-base voltage V(BR)CBO:


    Original     		PDF 8550SS -800mA, -50mA

    datasheet of ic 555

    Abstract: IC 555 datasheet ic 555 8550S
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR（ PNP ） TO—92 FEATURE Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range


    Original     		PDF 8550S O--92 -100A 30MHz 270TYP 050TYP datasheet of ic 555 IC 555 datasheet ic 555 8550S

    8550SS

    Abstract: transistor 8550ss IC800 ic 800 IB-80
    Text: 8550SS 8550SS TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A - 40 V 2. COLLECTOR Collector-base voltage V(BR)CBO: 3. BASE Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 8550SS -800mA, -50mA 8550SS transistor 8550ss IC800 ic 800 IB-80

    8550S

    Abstract: 8550s* Transistor
    Text: 8550S 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3.BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 8550S -50mA -500mA -500mA, -20mA 30MHz 8550S 8550s* Transistor

    8550SS

    Abstract: transistor 8550ss
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR（ PNP ） TO—92 FEATURES Power dissipation PCM : 1W （Tamb=25℃） 1.EMITTER Collector current ICM: -1.5 A Collector-base voltage 2. COLLECTOR 3. BASE


    Original     		PDF 8550SS O--92 270TYP 050TYP 8550SS transistor 8550ss

    Untitled

    Abstract: No abstract text available
    Text: 8550S PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.5±0.2 Power dissipation 0.625 W Tamb=25 C 14.3 ±0.2 PCM: Collector current ICM: 3.5 ±0.2 4.55±0.2 FEATURES


    Original     		PDF 8550S 01-Jun-2002

    8550S

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Excellent hFE linearity 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF 8550S -100uA, -50mA -500mA -500mA, -20mA 30MHz

    NPN transistor 8050s

    Abstract: 8050S 8550S
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TO-92 TRANSISTOR NPN FEATURES z Complimentary to 8550S z Collector current: IC=0.5A 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF 8050S 8550S 500mA 500mA, 30MHz NPN transistor 8050s 8050S 8550S

    8550S

    Abstract: No abstract text available
    Text: 8550S PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25


    Original     		PDF 8550S -500mA -500mA, -50mA -20mA 30MHz -100uA,

    8050S Transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 8050S TRANSISTOR NPN FEATURES 1.EMITTER z Complimentary to 8550S z Collector Current: IC=0.5A 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 8050S 8550S 500mA 500mA, 30MHz 8050S Transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 8550SS TRANSISTOR PNP 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 8550SS -100mA -800mA -800mA -80mA -50mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol


    Original     		PDF 8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ

    8050S

    Abstract: No abstract text available
    Text: 8050S NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 1.25MAX 3. BASE 2.92 MIN 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane Features Complimentary to 8550S Collector current: IC=0.5A 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 8050S 25MAX 8550S 500mA 500mA, 30MHz

    transistor+8550ss

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) : 2 W (TC=25℃) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF 8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ transistor+8550ss

    BR 8550D

    Abstract: 8550C 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D PNP 8550 NPN Transistor br 8550c NPN Transistor transistor 8550D BR 8550 D
    Text: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA BR 8550D 8550C 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D PNP 8550 NPN Transistor br 8550c NPN Transistor transistor 8550D BR 8550 D

    BR 8550D

    Abstract: 8550D transistor 8550c st 8550d 8550d BR 8550 he 8550d transistor 8550D transistor 8550D PNP transistor 8550
    Text: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 8550C 8550D BR 8550D 8550D transistor 8550c st 8550d 8550d BR 8550 he 8550d transistor 8550D transistor 8550D PNP transistor 8550

    BR 8550

    Abstract: BR 8550 D BR 8550D 8550c 8550D he 8550d PNP 8550 8550 pnp transistor 8550D transistor br 8550 c
    Text: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector


    Original     		PDF 8550C 8550D BR 8550 BR 8550 D BR 8550D 8550c 8550D he 8550d PNP 8550 8550 pnp transistor 8550D transistor br 8550 c

    8550D transistor

    Abstract: br 8550 NPN Transistor BR 8550 D 8550C 8550D BR 8550D BR 8550 BR 8050 BR 8050 D 8550 NPN Transistor
    Text: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA 800mA 800mA, 8550D transistor br 8550 NPN Transistor BR 8550 D 8550C 8550D BR 8550D BR 8550 BR 8050 BR 8050 D 8550 NPN Transistor

    8550D

    Abstract: BR 8550 D 8550c 8550D transistor br 8550 NPN Transistor BR 8550D 8550 NPN Transistor 8550 pnp he 8550d BR 8050
    Text: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA 800mA 800mA, 8550D BR 8550 D 8550c 8550D transistor br 8550 NPN Transistor BR 8550D 8550 NPN Transistor 8550 pnp he 8550d BR 8050

    s 8550 d

    Abstract: s8550LT1 8550 sot-23 pnp SS8550LT1 SS8550
    Text: MC C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ ^ 1.BASE 2.EMITTER 3.COLLECTOR S S 8550LT 1 TR A N S IS TO R PNP 7T oi FEATURES '¿ r Power dissipation PCM: 0.625 W CTamb=25T ) Collector current ICM: -1.5 A Collector-base voltage V(BR)CBo:-40V


    OCR Scan     		PDF OT-23 8550LT SS8550LT1 s 8550 d s8550LT1 8550 sot-23 pnp SS8550LT1 SS8550

    2TY marking

    Abstract: s8550lt1 marking 2TY 8550LT1 8550L
    Text: M C C S O T -2 3 P la s tic -E n c a p s u ia te T r a n s is t o r s ^ ^ 1.BASE 2 .EMITTER 3.COLLECTOR S 8550LT1 TR A N SISTO R PNP FEATURES Power dissipation PCM: 0.3 W (T a m b = 2 5 r) C ollector current ICM: - 0 .5 A C ollector-base voltage V(BR)CBO:


    OCR Scan     		PDF 8550LT1 S8550LT1 S8550LT1 2TY marking marking 2TY 8550L