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C2655 NPN Transistor Abstract: transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655 Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	PDF	2SC2655 2SA1020. 15oducts C2655 NPN Transistor transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655
C2655 NPN Transistor Abstract: transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06 Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	PDF	2SC2655 2SA1020. C2655 NPN Transistor transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06
C2655 NPN Transistor Abstract: C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655 Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	PDF	2SC2655 2SA1020. O-92MOD C2655 NPN Transistor C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655
C2655 NPN Transistor Abstract: C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655 Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	PDF	2SC2655 2SA1020. C2655 NPN Transistor C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655
C2655 Abstract: C2655 Y 2SC2655 BR C2655 C2655 Y 06 C2655 Y.8g C2655 Y 40 C2655 y 05 2SA1020 Text: 2SC2655 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC2655 ○ 電力増幅用 ○ 電力スイッチング用単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 900 mW • スイッチング時間が速い。	Original	PDF	2SC2655 2SA1020 O-92MOD 20070701-JA C2655 C2655 Y 2SC2655 BR C2655 C2655 Y 06 C2655 Y.8g C2655 Y 40 C2655 y 05 2SA1020
c2655 Abstract: C2655 Y BR C2655 2SC2655 C2655 Y 06 C2655 BR 2sc2655 y C2655 Y 40 C2655 y 05 2SA1020 Text: 2SC2655 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC2655 ○ 電力増幅用 ○ 電力スイッチング用単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 900 mW • スイッチング時間が速い。	Original	PDF	2SC2655 2SA1020 O-92MOD c2655 C2655 Y BR C2655 2SC2655 C2655 Y 06 C2655 BR 2sc2655 y C2655 Y 40 C2655 y 05 2SA1020