BR MARK Search Results

BR MARK Result Highlights (5)

Part	Manufacturer	Description
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R	Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)
UHD503R/883	Rochester Electronics LLC	UHD503R/883 - Dual marked (5962-8855101CA)

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Brady Worldwide Inc PS-750-2-BR Polyolefin Single-Side Marking Sleeves, 0.75"Dia x 2"W x 250, Brown \| Brady PS-750-2-BR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	PS-750-2-BR					1 $488.99 10 $469.63 100 $469.63 1000 $469.63 10000 $469.63	Buy Now
Brady Worldwide Inc PS-1000-2-BR Polyolefin Single-Side Marking Sleeves, 1"Dia x 2"W x 250, Brown \| Brady PS-1000-2-BR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	PS-1000-2-BR					1 $621.99 10 $597.36 100 $597.36 1000 $597.36 10000 $597.36	Buy Now
Brady Worldwide Inc PS-500-2-BR Polyolefin Single-Side Marking Sleeves, 0.50"Dia x 2"W x 500, Brown \| Brady PS-500-2-BR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	PS-500-2-BR					1 $853.99 10 $820.17 100 $820.17 1000 $820.17 10000 $820.17	Buy Now

BR MARK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: RF SIGNAL CHOKE 4.5 ±0.5 8.0+1/-0.5 6.5 MAX. 6.0 ± 0.5 6.0 ± 0.5 4.5 ± 0.5 3.0+1/-0.5 0.5 ±0.05 Unit: mm Marking Color Dot Part Number. 1 2 3 3361I-090 B W B 3361I -100 BR B B 3361I -110 BR BR B 3361I -120 BR R B 3361I -130 BR O B 3361I -140 BR Y B 3361I -150	Original	PDF	3361I-090 3361I
DIAC DB3 specifications Abstract: diac db3 D60 DIAC db3 dl breakback dmmdb4 Text: BI-DIRECTIONAL DIAC DB3 & DB4 Series SPECIFICATIONS Parameters Symbol Breakover Voltage V BR 1, V(BR)2 Breakover Voltage Symmetry \|V(BR)1\|-\|V(BR)2\| Dynamic Breakback Voltage I±V DI Breakover Current I(BR)1 AND I(BR)2 Peak Pulse Current for IP 10ms, 120pps, TA£4°C	Original	PDF	120pps, DL-35 DO-35. DO-35 C3CC03 DIAC DB3 specifications diac db3 D60 DIAC db3 dl breakback dmmdb4
DIAC DB3 specifications Abstract: diac db3 D60 DIAC diac breakback Text: BI-DIRECTIONAL DIAC DB3 & DB4 Series SPECIFICATIONS Parameters Symbol Breakover Voltage V BR 1, V(BR)2 Breakover Voltage Symmetry \|V(BR)1\|-\|V(BR)2\| Dynamic Breakback Voltage I±V DI Breakover Current I(BR)1 AND I(BR)2 Peak Pulse Current for IP 10ms, 120pps, TA£4°C	Original	PDF	120pps, DL-35 DO-35. DO-35 C3CC03 DIAC DB3 specifications diac db3 D60 DIAC diac breakback
marking br Abstract: 1mm pitch BGA br27 Text: NETWORKS Thick Film R-Network BGA Resistor Package BR STRUCTURE 1 2 3 4 5 6 7 8 W IDENTIFICATION Type BODY COLOR MARKING BR Black All these products have Pb-free terminations and meet RoHS requirements White, Alpha Numeric BR 27 A P T TEB 1002 F PRODUCT CODE	Original	PDF	D-25578 marking br 1mm pitch BGA br27
feature of ic UM 66 Abstract: 1r06 Y447 MPA-600 TSA2 um 66 ic 1R02 borosilicate glass NIST 546nm 1R01 Text: DIVISION DOCUMENT#-rev-# SEMICONDUCTEURS BROMONT, QUÉBEC 1050010.14 REV de 38 Jean-François Bédard DATE ACI 1R01 1R02 89/06/01 91/09/19 1R03 1R04 92/03/12 93/02/15 # br-376 # br-375 # br-505 BR-795 1R05 93/04/19 N/A 1R06 10-SE-93 N/A 7 94/07/04 N/A 8 9	Original	PDF	br-376 br-375 br-505 BR-795 10-SE-93 MPA-600" \0-mitel\doc\105\1050010 feature of ic UM 66 1r06 Y447 MPA-600 TSA2 um 66 ic 1R02 borosilicate glass NIST 546nm 1R01
Bobbins and Accessories Abstract: E16 bobbin bobbins philips bobbin PQ2026 ER bobbin Text: 3923 EN BR magn.prd.acc 04-09-1998 13:29 Philips Components Bobbins & Accessories Pagina 1 Winding and assembling your perfect component 3923 EN BR magn.prd.acc 3923 EN BR magn.prd.acc 04-09-1998 13:29 Pagina 2 Our bobbins… …your basis for perfect windings	Original	PDF
040-H Abstract: npn, transistor, sc 107 b Text: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30 Vdc Collector–Emitter Voltage V(BR)CEO 20 Vdc Emitter–Base Voltage V(BR)EBO 5.0 Vdc IC	Original	PDF	MSC3930-BT1 r14525 MSC3930 040-H npn, transistor, sc 107 b
sc 107 transistor Abstract: NPN TRANSISTOR SC-70 23marking Text: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30 Vdc Collector–Emitter Voltage V(BR)CEO 20 Vdc Emitter–Base Voltage V(BR)EBO 5.0 Vdc IC	Original	PDF	MSC3930-BT1 323/SC MSC3930 3000/Tape sc 107 transistor NPN TRANSISTOR SC-70 23marking
sot-323 transistor marking code 15 Abstract: sc 107 transistor NPN TRANSISTOR SC-70 Text: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 30 Vdc Collector−Emitter Voltage V(BR)CEO 20 Vdc Emitter−Base Voltage V(BR)EBO 5.0 Vdc IC	Original	PDF	MSC3930-BT1 sot-323 transistor marking code 15 sc 107 transistor NPN TRANSISTOR SC-70
Untitled Abstract: No abstract text available Text: SPLICING GUIDE FOR MIRROR-IMAGE CABLE MIRROR-IMAGE LAY-UP 25 V/S 24 V/BR 23 V/G 22 V/O 12 BK/O 13 BK/G 4 W/BR 3 W/G 10 R/S 9 R/BR 20 Y/S 15 BK/S 5 W/S 1 W/BL 11 BK/BL 21 V/BL 14 BK/BR 2 W/O 6 R/BL 16 Y/BL 7 R/O 17 Y/O 8 R/G 18 Y/G 19 Y/BR 25 PAIR UNIT U-25	Original	PDF	U-25-1 U-25-2 U-25-4 U-25-3
btp 128 550 Abstract: AXP 209 TPSMP6.8A Text: TPSMP6.8 thru TPSMP43A Vishay General Semiconductor New Product High Power Density Surface Mount Automotive Transient Voltage Suppressors DO-220AA SMP MAJOR RATINGS AND CHARACTERISTICS V(BR) 6.8 V to 43 V PPPM (for V(BR) 6.8 V) 250 W PPPM (for V(BR) 7.5 V - 12 V)	Original	PDF	TPSMP43A J-STD-020C 2002/95/EC 2002/96/EC DO-220AA 08-Apr-05 btp 128 550 AXP 209 TPSMP6.8A
ZXTP25140BFH Abstract: ZXTP25140BFHTA Text: ZXTP25140BFH 140V, SOT23, PNP medium power transistor Summary BV BR CEX > -180V; BV(BR)CEO > -140V BV(BR)ECO > -7V ; IC(cont) = -1A Rce(sat) = 180 m⍀ typical Vce(sat) < -260mV @ 1A ; PD = 1.25W Description C Advanced process capability and package design have been used to	Original	PDF	ZXTP25140BFH -180V; -140V -260mV ZXTP25140BFHTA ZXTP25140BFH ZXTP25140BFHTA
relay 12v 100A Abstract: transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description Advanced process capability and package design have been used to	Original	PDF	ZXTP23015CFH -36mV ZXTN23015CFH relay 12v 100A transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
TS16949 Abstract: ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to	Original	PDF	ZXTP25060BFH -100V, -85mV ZXTN25060BFH D-81541 TS16949 ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA

Untitled Abstract: No abstract text available Text: D D H1 H W W1 D C-TICK Mark Safety Approved BR	Original	PDF
TS16949 Abstract: ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to	Original	PDF	ZXTP23015CFH -36mV ZXTN23015CFH D-81541 TS16949 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
ZXTN25060BFH Abstract: ZXTP25060BFH ZXTP25060BFHTA Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to	Original	PDF	ZXTP25060BFH -100V, -85mV ZXTN25060BFH ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA
marking 056 Abstract: ZXTP25100BFH ZETEX marking 056 SOT23 ZXTN25100BFH ZXTP25100BFHTA ZXTN Text: ZXTP25100BFH 100V, SOT23, PNP medium power transistor Summary BV BR CEX > -140V, BV(BR)CEO > -100V BV(BR)ECX > -7V ; IC(cont) = -2A VCE(sat) < -130mV @ -1A RCE(sat) = 108m⍀ typical PD = 1.25W Complementary part number ZXTN25100BFH Description C Advanced process capability and package design have been used to	Original	PDF	ZXTP25100BFH -140V, -100V -130mV ZXTN25100BFH marking 056 ZXTP25100BFH ZETEX marking 056 SOT23 ZXTN25100BFH ZXTP25100BFHTA ZXTN
TMPTA06 Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560 Text: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V\|BR CBO V\|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE	OCR Scan	PDF	T-23/TO -236A TMPT2222A TMPT3904 TMPT4401 TMPT5089 TMPT6427 TMPTA06 TMPTA42 marking 1p marking 1R NPN BEC npn V7560
tp4093 Abstract: TMPT5401 mA 723 TMPT2907 TP4221 Text: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)	OCR Scan	PDF	BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D BCW68F BCW68G BCW69 BCW70 tp4093 TMPT5401 mA 723 TMPT2907 TP4221
Untitled Abstract: No abstract text available Text: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type BR CBO V ’ (BR)CEO (V) (V) v DC Current Gain (BR)EBO Max. @ V C8 (V) (nA) (V) K* v CE(MI) @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)	OCR Scan	PDF	BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D BCW68F BCW68G BCW69 BCW70
transmitting triode Abstract: marconi company marconi Text: BR 129/JULY 1954 Triode Type BR 129 HF AMPLIFIER AND OSCILLATOR General. The BR 129 is a forced-air-cooled transmitting triode fitted with a tungsten filament. Cooling. The anode requires forced air cooling. The air cooling and air flow characteristics given show the	OCR Scan	PDF	129/JULY transmitting triode marconi company marconi
npn, transistor, sc 107 b Abstract: MOTOROLA DATE CODE transistor Text: MSC2295-BT1* MSC2295-CT1* CASE 318D-03, STYLE 1 COLLECTOR MAXIMUM RATINGS 3 Ï A = 25 C Rating Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current-Continuous Symbol Value Unit v (BR)CBO 30 Vdc V(BR)CEO 20 Vdc v (BR)EBO	OCR Scan	PDF	MSC2295-BT1* MSC2295-CT1* 318D-03, SC-59 MSC2295-BT1 MSC2295-CT1 MSC2295-BT1 npn, transistor, sc 107 b MOTOROLA DATE CODE transistor
O437 Abstract: marconi company marconi Text: BR 155/JULY 1954 arconi Triode Type BR 155 VHF A M PLIFIER AND OSCILLATOR General. The BR 155 is a forced-air-cooled transm it ting triode fitted with a tungsten filament. Filament Starting. The cold filament resistance is approximately 0-01Q. The filament current must not	OCR Scan	PDF	155/JULY O437 marconi company marconi

BR MARK Search Results

BR MARK Result Highlights (5)

BR MARK Price and Stock

Brady Worldwide Inc PS-750-2-BR

Brady Worldwide Inc PS-1000-2-BR

Brady Worldwide Inc PS-500-2-BR

BR MARK Datasheets Context Search

Untitled

DIAC DB3 specifications

DIAC DB3 specifications

marking br

feature of ic UM 66

Bobbins and Accessories

040-H

sc 107 transistor

sot-323 transistor marking code 15

Untitled

btp 128 550

ZXTP25140BFH

relay 12v 100A

TS16949

Untitled

TS16949

ZXTN25060BFH

marking 056

TMPTA06

tp4093

Untitled

transmitting triode

npn, transistor, sc 107 b

O437