ZXTP25140BFH
Abstract: ZXTP25140BFHTA
Text: ZXTP25140BFH 140V, SOT23, PNP medium power transistor Summary BV BR CEX > -180V; BV(BR)CEO > -140V BV(BR)ECO > -7V ; IC(cont) = -1A Rce(sat) = 180 m⍀ typical Vce(sat) < -260mV @ 1A ; PD = 1.25W Description C Advanced process capability and package design have been used to
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ZXTP25140BFH
-180V;
-140V
-260mV
ZXTP25140BFHTA
ZXTP25140BFH
ZXTP25140BFHTA
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relay 12v 100A
Abstract: transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description Advanced process capability and package design have been used to
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ZXTP23015CFH
-36mV
ZXTN23015CFH
relay 12v 100A
transistor pnp 12V 1A Collector Current
vebo 15v sot23
ZXTN23015CFH
ZXTP23015CFH
ZXTP23015CFHTA
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TS16949
Abstract: ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA
Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to
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ZXTP25060BFH
-100V,
-85mV
ZXTN25060BFH
D-81541
TS16949
ZXTN25060BFH
ZXTP25060BFH
ZXTP25060BFHTA
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ZXTN2
Abstract: No abstract text available
Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to
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ZXTP25060BFH
-100V,
-85mV
ZXTN25060BFH
D-81541
ZXTN2
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TS16949
Abstract: ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to
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ZXTP23015CFH
-36mV
ZXTN23015CFH
D-81541
TS16949
ZXTN23015CFH
ZXTP23015CFH
ZXTP23015CFHTA
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ZXTN25060BFH
Abstract: ZXTP25060BFH ZXTP25060BFHTA
Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to
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ZXTP25060BFH
-100V,
-85mV
ZXTN25060BFH
ZXTN25060BFH
ZXTP25060BFH
ZXTP25060BFHTA
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marking 056
Abstract: ZXTP25100BFH ZETEX marking 056 SOT23 ZXTN25100BFH ZXTP25100BFHTA ZXTN
Text: ZXTP25100BFH 100V, SOT23, PNP medium power transistor Summary BV BR CEX > -140V, BV(BR)CEO > -100V BV(BR)ECX > -7V ; IC(cont) = -2A VCE(sat) < -130mV @ -1A RCE(sat) = 108m⍀ typical PD = 1.25W Complementary part number ZXTN25100BFH Description C Advanced process capability and package design have been used to
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ZXTP25100BFH
-140V,
-100V
-130mV
ZXTN25100BFH
marking 056
ZXTP25100BFH
ZETEX marking 056 SOT23
ZXTN25100BFH
ZXTP25100BFHTA
ZXTN
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Untitled
Abstract: No abstract text available
Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to
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ZXTP23015CFH
-36mV
ZXTN23015CFH
D-81541
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BCW67CR
Abstract: BCW67AR BCW68GR BCW67 BCW68HR BCW65 BCW66 BCW67A BCW67B BCW67C
Text: BCW67 BCW68 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW67 BCW68 V(BR)CEO -32 -45 BCW67 BCW68 V(BR)CES -45 -60 Emitter-Base Breakdown Voltage V(BR)EBO -5 Collector-Emitter Cut-off Current
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BCW67
BCW68
BCW67A
BCW67B
BCW67C
BCW67CR
BCW67AR
BCW68GR
BCW67
BCW68HR
BCW65
BCW66
BCW67A
BCW67B
BCW67C
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h12e
Abstract: BCW60DR CR SOT23 power 22E mark B1 sot23 BCW60 BCW60A BCW60AR BCW60B BCW60BR
Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW60 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES 20 20
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BCW60
BCW60AR
BCW60BR
BCW60CR
BCW60DR
150oC
200Hz
h12e
BCW60DR
CR SOT23
power 22E
mark B1 sot23
BCW60
BCW60A
BCW60AR
BCW60B
BCW60BR
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BCW61DR
Abstract: BCW61CR BCW61BR H12E BCW61AR K3024 BCW60 h22e BCW61A BCW61B
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW61 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES -20 -20 µA nA VCES =-32V VCES =-32V ,Tamb=150oC
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BCW61
BCW60
150oC
-10mA
-50mA,
BCW61DR
BCW61CR
BCW61BR
H12E
BCW61AR
K3024
BCW60
h22e
BCW61A
BCW61B
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ZXTN2031FTA
Abstract: ZXTN2031F ZXTP2025F mosfet marking 12W
Text: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to
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ZXTN2031F
ZXTP2025F
ZXTN2031FTA
ZXTN2031F
ZXTP2025F
mosfet marking 12W
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marking 12W SOT23
Abstract: No abstract text available
Text: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEV > -50V, V(BR)CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to
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ZXTP2025F
ZXTN2031F
marking 12W SOT23
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marking 12W SOT23
Abstract: 12W MARKING sot23 IB100mA Marking 853
Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to
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ZXTN2020F
ZXTP2029F
ZXTN2020FTA
522-ZXTN2020FTA
ZXTN2020FTA
marking 12W SOT23
12W MARKING sot23
IB100mA
Marking 853
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marking 322
Abstract: br 2222 npn
Text: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to
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ZXTN2031F
ZXTP2025F
marking 322
br 2222 npn
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Untitled
Abstract: No abstract text available
Text: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to
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ZXTN2031F
ZXTP2025F
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marking 12W SOT23
Abstract: ZXTN2020F
Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to
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ZXTN2020F
ZXTP2029F
ZXTN2020FTA
marking 12W SOT23
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12W MARKING sot23
Abstract: marking 12W SOT23 ZXTN2020F ZXTP2029F ZXTP2029FTA
Text: ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V BR CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m⍀ typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number: ZXTN2020F Description Advanced process capability and package design have been used to
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ZXTP2029F
-130V,
-100V
-80mV
ZXTN2020F
12W MARKING sot23
marking 12W SOT23
ZXTN2020F
ZXTP2029F
ZXTP2029FTA
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marking 12W SOT23
Abstract: ZXTN2020F ZXTN2020FTA ZXTP2029F plc lamp 12W MARKING sot23
Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to
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ZXTN2020F
ZXTP2029F
marking 12W SOT23
ZXTN2020F
ZXTN2020FTA
ZXTP2029F
plc lamp
12W MARKING sot23
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SOT23 marking 6A
Abstract: No abstract text available
Text: ZXTN23015CFH 15V, SOT23, NPN medium power transistor Summary V BR CEX > 60V, V(BR)CEO > 15V IC(CONT) = 6A RCE(SAT) = 19m⍀ typical VCE(SAT) < 30mV @ 1A PD = 1.25W Complementary part number : ZXTP23015CFH Description Advanced process capability and package design have been used to
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ZXTN23015CFH
ZXTP23015CFH
522-ZXTN23015CFHTA
ZXTN23015CFHTA
SOT23 marking 6A
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transistor P39
Abstract: MOSFET 4446 ZXTP2039FTC ZXTN2038F ZXTP2039F ZXTP2039FTA
Text: ZXTP2039F SOT23 80 volt PNP silicon planar medium power transistor Summary V BR CEV > -80V V(BR)CEO > -60V Ic(cont) = -1A Vce(sat) < -600mV @ -1A Complementary type ZXTN2038F Description This transistor combines high gain, high current operation and low saturation voltage making it
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ZXTP2039F
-600mV
ZXTN2038F
ZXTP2039FTA
ZXTP2039FTC
transistor P39
MOSFET 4446
ZXTP2039FTC
ZXTN2038F
ZXTP2039F
ZXTP2039FTA
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Untitled
Abstract: No abstract text available
Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to
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ZXTN2020F
ZXTP2029F
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181 622 b
Abstract: "marking 327" mosfet motor dc 48v ZXTN23015CFH ZXTN23015CFHTA ZXTP23015CFH
Text: ZXTN23015CFH 15V, SOT23, NPN medium power transistor Summary V BR CEX > 60V, V(BR)CEO > 15V IC(CONT) = 6A RCE(SAT) = 19m⍀ typical VCE(SAT) < 30mV @ 1A PD = 1.25W Complementary part number : ZXTP23015CFH Description Advanced process capability and package design have been used to
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ZXTN23015CFH
ZXTP23015CFH
181 622 b
"marking 327"
mosfet motor dc 48v
ZXTN23015CFH
ZXTN23015CFHTA
ZXTP23015CFH
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e
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000b3A7
O-92ITO-226AA
TP2907
TP2907A
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