Contextual Info: nomn BR62256A BLOCK DIAGRAM NOTE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only. Functional opera­ tion of this device at these or any other conditions above those indicated in the operational sections of this specifi­

6265B

Contextual Info: Memory ICs 8KX8 bit SRAM BR6265BF-N1OSL The B R 6265B F-N 10SLis an 8192 word X 8 bit CM O S static RAM. It runs on a 5 V single power supply, and input can be directed coupled with TTL. Current consumption in the non-selected state is extremely low at 20 ^ A max. ,

Contextual Info: BR62 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)40’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.250 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0

Contextual Info: Memory ICs Memory ICs 8 K X 8 bit S R A M BR6265BF-N1OSL T h e B R 6265B F-N 1 OSL is an 8 1 9 2 w ord X 8 bit C M O S static RAM . It runs on a 5 V single p o w e r supply, and input can be directed coupled with TTL. Current consum ption in the non-selected state is extrem ely low at 20 ¡x k m ax. ,

BR6216B-10LL

Contextual Info: BR6216B-10LL Static RAM, 2k x 8 bit The BR6216B-10LL is a CMOS static random access memory SRAM with a memory size of 2048 words x 8 bits. Dimensions (Units : mm) BR6216B-10LL (SDIP-24) 22.9±0.3 It can be operated from a single 5-V power supply and it has inputs and outputs that

si103

Contextual Info: BR6216B-10LL 2 K X 8 tf y Y B R 6 2 1 6 B - 1 L L SRAM 2 K X 8 Bit SRAM i ^t-ffí'+iíEl/Dim ensions Unit : mm BR6216B(Í, 2 0 4 8 7 - K x8 fcf y l~<7)ÍBj£<7)CMOS* •f- "j í ’ R AM T'To A iU t l í í T T L t i ilijín B ifiT 'T o CMOS'> U =i > V - V T ' *

BR62256F70LL

Abstract: BR62256F-70LL BR62256
Contextual Info: Memory ICs 256k 32k x 8 Bit SRAM BR62256F-70LL T h e B R 6 2 2 5 6 F -7 0 L L is a 3 2 7 6 8 w o rd x 8 bit a syn ch ro n o u s h ig h -sp e e d C M O S sta tic RAM . it runs on a 5 V single p o w e r supply, and in add itio n to its low p o w e r co n su m p tio n and hig h -sp e e d , its lo w sta n d b y c u rre n t e n a b le s its use

cdip28pin

Contextual Info: BR6265 BR6265 8KX8Bit64Ksram • £M5>r3E0/Dimensions Unit : mm BR6265 (i, 8 K X 8 tf CMOS X $ x -f "j v 0 RAM 7 t o TTL ¿ ¡ U g W ^ T '- T o h C M O S x /W ^ ic T ', $ » « ) £ £ 2 V IC T If T 1 9 - 2 JW S & T t i t c t b , A' 7 x U - a ' 7 7 T v -J

br6116-100

Abstract: BR6264-12 br6264 BR6264-10 BR2804 BR6116
Contextual Info: lUMm BR6264 8K x 8 CMOS SRAM Features High-speed 100/120 ns Max. TTL compatible-all inputs and outputs Low power dissipation Common I/O using three-state outputs Standard version: Operating 90mA Max. Standby 2mA Max. Output enable and two chip enable inputs

Contextual Info: Static RAM, 2k x 8 bit B R 6 2 1 6 B -1 0 L L The BR6216B-10LL is a CMOS static random access memory SRAM with a memory size of 2048 words x 8 bits. D im ensions ( U n it s : m m ) BR6216B-10LL (SDIP-24) 22. 9 + 0.3 It can be operated from a single 5-V power

Contextual Info: Cross Reference Guide BR6203 / BR6203* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 5.0 - 500.0 MHz Gain 14.5 dB Typical 13.0 dB Min Noise Figure 5.5 dB Typical 7.5 dB Max P1dB 25.0 dBm Typical 22.5 dBm Min

Contextual Info: BR62G Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)40’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.250 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0

BR6265BF-N10SL

Abstract: BR6265BFN10SL
Contextual Info: Memory ICs 8k x 8 Bit SRAM BR6265BF-N10SL The BR6265BF-N10SL is an 8192 word × 8 bit CMOS static RAM. It runs on a 5V single power supply, and input can be directed coupled with TTL. Current dissipation in the non-selected state is extremely low at 20µA max. , and

Contextual Info: Cross Reference Guide BR6210 / BR6210* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 5.0 - 500.0 MHz Gain 15.3 dB Typical 14.0 dB Min Noise Figure 2.0 dB Typical 3.0 dB Max P1dB 7.5 dBm Typical 4.5 dBm Min

Contextual Info: BR62F Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)40’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.250 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)3.0

Contextual Info: Memory ICs 256k 32k x 8 Bit SRAM BR62256F-70LL The BR62256F-70LL is a 32768 word x 8 bit asynchronous high-speed CMOS static RAM. it runs on a 5V single power supply, and in addition to its low power consum ption and high-speed, its low standby current enables its use

BR62256F-70LL

Abstract: BR62256 BR62256F70LL cs 8502
Contextual Info: Memory ICs 256k 32k x 8 Bit SRAM BR62256F-70LL The BR62256F-70LL is a 32768 word × 8 bit asynchronous high-speed CMOS static RAM. It runs on a 5V single power supply, and in addition to its low power consumption and high-speed, its low standby current enables its use

BR6265

Abstract: BR6265-12LL DIP28 ILO 615
Contextual Info: ugniti BR6265 8K X 8 CMOS SRAM FEATURES PIN CONFIGURATION Plastic Dual-in-line Package • Single +5V Power Supply • Access Times 120ns max. NC • Supply Current — Very low power version: Operating: 40mA (max.) Standby: 50^A (max.) • Fully Static Operation - No Clock Or Refresh

BR6216B-10LL

Abstract: BR6216B10LL "static ram 2k x 8" br6216
Contextual Info: Static RAM, 2k x 8 bit B R 6 2 1 6 B -1 0 L L The BR6216B-10LL is a CMOS static random access memory SRAM with a memory size of 2048 words x 8 bits. Dimensions (Units : mm) BR6216B-10LL (SDIP-24) 22.9+0.3 It can be operated from a single 5-V power supply and it has inputs and outputs that

Contextual Info: Cross Reference Guide BR6212 / BR6212* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 10.0 - 1300.0 MHz Gain 10.0 dB Typical 8.5 dB Min Noise Figure 6.0 dB Typical 8.5 dB Max P1dB 22.5 dBm Typical 19.5 dBm Min

BR6265A-10LL

Abstract: BR6265A BR6265AF10LL BR6265AF-10LL BR6265A-10LL/BR6265AF-10LL
Contextual Info: BR6265A-10LL/BR6265AF-10LL BR6265A-10LL BR6265AF-10LL 8KX8Bit 64K SRAM • ^ JférfjiE l/D im en sio n s Unit : mm BR6265A/AF l i , 8 K X 8 t ' y h «IJ& <D CMOS 7, 9 x •i -j0 RAM T' t o A U flliT T L v 'J h CMOS 7*/^ ■ ÌX & W T', 2 V C " R i T b T - ? fr'fS ftT ' % 2 tz » , a' "jt U - /< y ?

BR6265BF-N10SL

Contextual Info: Memory ICs Memory IC8 K X 8 bit S R A M BR6 2 6 5 BF-N1 OSL 8 The BR6265BF-N10SL is an 8192 word X 8 bit CMOS static RAM. It runs on a 5V single power supply, and input can be directed coupled with T TL Current consumption In the non-selected state is extremely low at 20 n A max. ,

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

ink cartridge chip

Abstract: AEC-Q100 DS2431 DS2431-A1 DS2431P DS2431X DS2480B P1451 polynomial TSOC 6
Contextual Info: 19-4675; Rev 10; 3/11 1024-Bit, 1-Wire EEPROM The DS2431 is a 1024-bit, 1-Wire EEPROM chip organized as four memory pages of 256 bits each. Data is written to an 8-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, the