frankfurt oder
Abstract: 617db-1018 Megaxess TFB2208 frankfurt TFB2208T
Text: Preliminary Technical Data TFB2208T M EMegaxess G AGmbH X Deutschland ESS Edition 09/00 2.2GHz RF Broad Band Amplifier Short Description Features • Single ended input 50Ω The bipolar integrated circuit TFB2208T is a RF broad band amplifier for several
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TFB2208T
frankfurt oder
617db-1018
Megaxess
TFB2208
frankfurt
TFB2208T
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frankfurt
Abstract: TFB2208
Text: Preliminary Technical Data TFB2208T M EMegaxess G AGmbH X Deutschland ESS Edition 09/00 2.2GHz RF Broad Band Amplifier Short Description Features • Single ended input 50Ω The bipolar integrated circuit TFB2208T is a RF broad band amplifier for several
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TFB2208T
frankfurt
TFB2208
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OAT1523S-OLT-B
Abstract: LD 7775
Text: FEDFOAT1523-OLT-01 OKI Electronic Components OAT1523S-OLT-B Issue Data : Jan. 15, 2002 Broad band-PON Optical Module APPLICATION • Optical transceiver for Broad band- PON application ITU-T Rec. G.983.3 FEATURES · 1- fiber bi- directional transmission by incorporated WDM
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FEDFOAT1523-OLT-01
OAT1523S-OLT-B
MIL-STD-883
OAT1523S-OLT-B
LD 7775
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RFANT7635110A1T
Abstract: ltcc antenna ltcc antenna 2.4 GHz WALSIN WF SERIES chip antenna ltcc chip LF antenna design X band antenna WALSIN walsin antenna
Text: Walsin Technology Corporation LTCC Multi Layer Chip Antenna – Broad Band Type For ISM Band 2.4GHz Application Patent Pending Surface Mounted Devices with a small dimension of 3 7.6 x 3.5 x 1.1 mm future meet miniaturization trend. 380MHz broad bandwidth design makes less
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380MHz
RFANT7635110A1T
RFANT7635110A1T
ltcc antenna
ltcc antenna 2.4 GHz
WALSIN WF SERIES
chip antenna
ltcc chip
LF antenna design
X band antenna
WALSIN
walsin antenna
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rf amplifier broad band
Abstract: RMDA1840 long range gold detector circuit diagram
Text: RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Description Features The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The
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RMDA1840
RMDA1840
rf amplifier broad band
long range gold detector circuit diagram
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RAYTHEON
Abstract: RMDA1840
Text: RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Description Features The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The
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RMDA1840
RMDA1840
RAYTHEON
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RAYTHEON
Abstract: rf amplifier broad band MAX 8778 RMDA1840
Text: Raytheon Commercial Electronics RMDA1840 18 to 40 GHz Broad Band Amplifier MMIC The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The
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RMDA1840
RMDA1840
RAYTHEON
rf amplifier broad band
MAX 8778
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fmm5049
Abstract: FMM5049VT mmic case styles 28492
Text: FMM5049VT Power Amplifier MMIC FEATURES • • • • High Output Power: Pout = 41.0dBm Typ. High Linear Gain: GL = 33.0dB (Typ.) Broad Band: 1.8 to 2.3GHz Hermetically Sealed Package DESCRIPTION The FMM5049VT is a high-gain, wide band, three-stage MMIC
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FMM5049VT
FMM5049VT
FCSI0901M200
fmm5049
mmic case styles
28492
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AN0005
Abstract: CHA2093RBF RO4003
Text: CHA2093RBF 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a two-stage wide band monolithic low noise amplifier. • Broad band performance: 20-30GHz
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CHA2093RBF
20-30GHz
20-30GHz
DSCHA2093RBF2057
-26-Feb
AN0005
CHA2093RBF
RO4003
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MA4SW510
Abstract: PIN Diode Switch for frequencies up to 10 GHz
Text: MA4SW510 SP5T PIN Diode Reflective Switch MA4SW510 Layout Features n n n V 1.00 Ultra Broad Bandwidth: 50 MHz to 26 GHz 1.0 dB Insertion Loss, 30 dB Isolation at 20 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description The MA4SW510 is a SP5T Series-Shunt broad band switch
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MA4SW510
MA4SW510
PIN Diode Switch for frequencies up to 10 GHz
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Untitled
Abstract: No abstract text available
Text: MA4SW510 SP5T PIN Diode Reflective Switch MA4SW510 Layout Features n n n V 2.00 Ultra Broad Bandwidth: 50 MHz to 26 GHz 1.0 dB Insertion Loss, 30 dB Isolation at 20 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description The MA4SW510 is a SP5T Series-Shunt broad band switch
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MA4SW510
MA4SW510
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FLM2527L-20F
Abstract: Eudyna Devices power amplifiers Eudyna Devices X BAND power amplifiers
Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package
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FLM2527L-20F
FLM2527L-20F
Volt4888
Eudyna Devices power amplifiers
Eudyna Devices X BAND power amplifiers
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IM324
Abstract: FLM1314-6F
Text: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
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FLM1314-6F
FLM1314-6F
FCSI0598M200
IM324
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Untitled
Abstract: No abstract text available
Text: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
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FLM1314-12F
FLM1314-12F
FCSI0500M200
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FLM1314-6F
Abstract: tel 1145 319
Text: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
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FLM1314-6F
FLM1314-6F
Di4888
tel 1145 319
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FLM1314-6F
Abstract: No abstract text available
Text: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
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FLM1314-6F
FLM1314-6F
FCSI0598M200
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TRF7003
Abstract: TRF8010
Text: TRF8010 QUESTION: Does the TRF8010 have band-limited matching on chip? Could it work at 400 MHz? Answer: The TRF8010/11 is inherently a relatively "broad-band" device but does have interstage matching on-chip. The GSM evaluation board is particularly matched for
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TRF8010
TRF8010
TRF8010/11
880-915MHz
900MHz
400MHz
TRF7003
400MHz.
TRF7003
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FLM1414-12F
Abstract: 3600mA
Text: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
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FLM1414-12F
FLM1414-12F
D4888
3600mA
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fujitsu x band amplifiers
Abstract: No abstract text available
Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: hadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package
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FLM2527L-20F
FLM2527L-20F
FCSI0499M200
fujitsu x band amplifiers
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Untitled
Abstract: No abstract text available
Text: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: hadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed
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FLM1414-12F
FLM1414-12F
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FLM1414-12F - X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P ^ b = 40.5dBm Typ. High Gain: = 5.0dB (Typ.) High PAE: riadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz
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FLM1414-12F
FLM1414-12F
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FLM1314-6F -FEATURES • • • • • • X, Ku-Band Internally Matched FET High Output Power: P ^ b = 37.5dBm Typ. High Gain: = 5.5dB (Typ.) High PAE: r!add = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz
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FLM1314-6F
FLM1314-6F
FCSI0598M200
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db404
Abstract: PH 2896 P DB-404 Decibel Products db404 H342 DB5007 DB404L
Text: BROAD BAND ANTENNA DB404 3.8 or 5 dB GAIN, 406-512 MHz The DB404, with its 2-stack collinear array of dual dipoles, provides a broad bandwidth that allows the antenna to be ordered in advance of frequency assignment. • Extremely Rugged - Resists winds to
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DB404
DB404,
76-H342
PH 2896 P
DB-404
Decibel Products db404
H342
DB5007
DB404L
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Untitled
Abstract: No abstract text available
Text: FLM2527L-20F - L-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 43.0dBm Typ. • • • • • High Gain: G-|dB = 11 0clB (TyP) High PAE: r!add = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz
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FLM2527L-20F
FLM2527L-20F
FCSI0499M200
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