mt 1389 de
Abstract: samwha ferrite EE-4242 EER3530 EER2834 PQ3225 samwha ferrite tile samwha .FERRITE TILE eer3435 str 52100
Text: www.samwha.com/electronics SAMWHA ELECTRONICS SEOUL HQ SAMWHA USA Inc. SAN DIEGO HQ SAMWHA HUNGARY KFT. HUNGARY Samyoung Bldg 587-8, Sinsa-Dong, Gangnam-Gu, Seoul, 135-892, Korea Tel. +82-2-546-0999 Fax. +82-2-546-7354 2555 Melksee Street, San Diego, California, 92154, USA
|
Original
|
|
PDF
|
br 8764
Abstract: 13-AMPLIFIER BF1210
Text: BF1210 Dual N-channel dual gate MOSFET Rev. 01 — 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable
|
Original
|
BF1210
BF1210
OT363
br 8764
13-AMPLIFIER
|
PDF
|
BF1109
Abstract: BF1109R BF1109WR dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs
|
Original
|
BF1109;
BF1109R;
BF1109WR
SCA55
117067/00/02/pp16
BF1109
BF1109R
BF1109WR
dual-gate
|
PDF
|
BF1109
Abstract: marking code NB BF1109R BF1109WR dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 1997 Dec 08 NXP Semiconductors Product specification BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs FEATURES
|
Original
|
BF1109;
BF1109R;
BF1109WR
MSB035
BF1109R
R77/02/pp15
BF1109
marking code NB
BF1109WR
dual-gate
|
PDF
|
BF1109
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 1997 Dec 08 NXP Semiconductors Product specification BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs FEATURES PINNING
|
Original
|
BF1109;
BF1109R;
BF1109WR
MSB035
BF1109R
R77/02/pp15
BF1109
|
PDF
|
transistor smd code marking 404
Abstract: transistor smd code marking .404 transistor SMD MARKING CODE 882 transistor SMD MARKING CODE NB marking code NB TRANSISTOR SMD MARKING CODE BS t TRANSISTOR SMD MARKING CODE BS s NXP SOT143R MSL TRANSISTOR SMD MARKING CODE 1v marking code ff SMD Transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs
|
Original
|
BF1109;
BF1109R;
BF1109WR
BF1109WR
BF1109
BF1109R
ICP1020807
transistor smd code marking 404
transistor smd code marking .404
transistor SMD MARKING CODE 882
transistor SMD MARKING CODE NB
marking code NB
TRANSISTOR SMD MARKING CODE BS t
TRANSISTOR SMD MARKING CODE BS s
NXP SOT143R MSL
TRANSISTOR SMD MARKING CODE 1v
marking code ff SMD Transistor
|
PDF
|
Sprecher Schuh LE 2-20
Abstract: Sprecher Schuh LE 2-12 Sprecher Schuh le2-12 LE2-20 Sprecher Schuh LE2-20 Sprecher Schuh LE2-16 Sprecher Schuh CT 3-23 LA2-G2853 T3168 Sprecher Schuh L2-16
Text: Rotary Cam Switches Series L2 Rotary Cam Switches Technical Information K2 K27 Series R-Line Rotary Cam Switches Technical Information K35 K44 Custom Switches K51 K Rotary Cam Switches K1 Series L2 Rotary Cam Switches Sprecher + Schuh’s comprehensive line
|
Original
|
|
PDF
|
Sprecher Schuh LE 2-20
Abstract: Sprecher Schuh LE 2-12 Sprecher Schuh LE 2-25 sprecher schuh le2-16 cam switch Sprecher Schuh L2-16 Sprecher Schuh LE2-20 Sprecher Schuh LE2-16 LE2-20 Sprecher Schuh le2-12 Sprecher Schuh LE 2
Text: Series L2 Rotary Cam Switches Sprecher + Schuh’s comprehensive line of L2 rotary cam switches are available for all control and load applications up to 25 amps. The line is modular and has many convenience and safety features. A well thought out ordering
|
Original
|
LA2-12/16
LA2-20/25
LA2-G3393
LA2-G3394
Sprecher Schuh LE 2-20
Sprecher Schuh LE 2-12
Sprecher Schuh LE 2-25
sprecher schuh le2-16 cam switch
Sprecher Schuh L2-16
Sprecher Schuh LE2-20
Sprecher Schuh LE2-16
LE2-20
Sprecher Schuh le2-12
Sprecher Schuh LE 2
|
PDF
|
UHF Class-E Power Amplifier Based Upon Multi-harmonic Approximation
Abstract: single tuned amplifier theory
Text: UHF Class-E Power Amplifier Based Upon Multi-harmonic Approximation Ramon A. Beltran Skyworks Solutions Inc., 2427 W. Hillcrest Dr., Newbury Park, CA, 91320, USA. E-mail: ramon.beltran@skyworksinc.com Abstract— At high frequencies class-E power amplifiers
|
Original
|
CAS-24,
UHF Class-E Power Amplifier Based Upon Multi-harmonic Approximation
single tuned amplifier theory
|
PDF
|
170M8554
Abstract: bussmann Fuse 450 amps 250 volts max zs FM09 PS Jet 20A 300v fuse
Text: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information
|
Original
|
0210-55M
170M8554
bussmann Fuse 450 amps 250 volts max zs
FM09
PS Jet 20A 300v fuse
|
PDF
|
220v AC voltage stabilizer schematic diagram
Abstract: FUSE M2 250e 11kV breaker control circuit diagram bussmann Fuse 170L series bussmann semiconductor fuse catalogue arc welder schematic HRC fuse gg GEC relay applications for 6.6kV switchgear ups circuits 170E bussmann
Text: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information
|
Original
|
0210-55M
220v AC voltage stabilizer schematic diagram
FUSE M2 250e
11kV breaker control circuit diagram
bussmann Fuse 170L series
bussmann semiconductor fuse catalogue
arc welder schematic
HRC fuse gg GEC
relay applications for 6.6kV switchgear
ups circuits
170E bussmann
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Connectors Section Contents Page Feed through blocks DS series . . . . . . . . . . . . . . . . . . 334 Feed through blocks (DP series) . . . . . . . . . . . . . . 335-336 Mini feed through blocks (DM series) . . . . . . . . . . . . . . 337 Double level blocks (DDP series). . . . . . . . . . . . . . . . . . 338
|
Original
|
53TYP
70TYP
16TYP
C7024
|
PDF
|
ana 658 solar charge
Abstract: RD2004 for 4120 40A 14VDC relay pico fuse color code varistor 20sp Lucent SLC 96 cabinet MDM cooper bussmann semiconductor fuse catalogue MDQ 100a 600v bridge rectifier GBA 616
Text: Bussmann electrical full line catalog Leadership in Circuit Protection Introducing Bussmann by Eaton The protection you rely on. For more, visit Bussmann.com Leadership in Circuit Protection. The only company that can provide a complete circuit protection solution for all applications.
|
Original
|
|
PDF
|
TRANSISTOR BD 137-10
Abstract: No abstract text available
Text: CFS0303-SB Advanced Product Information February 2004 V1.2 1 of 16 Features ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) ❏ High Dynamic Range ❏ Low Current and Voltage. ❏ Bias Point 3V and 60 mA ❏ 0.3 dB noise figure at 2 GHz
|
Original
|
CFS0303-SB
OT-343)
TRANSISTOR BD 137-10
|
PDF
|
|
|
104 c1k capacitor
Abstract: 103 c1k capacitor UPC2712T marking code C1H mmic marking code C1G mmic uPC2749 equivalent 104 c1k marking code C1L UPC2713T transistor marking C2s
Text: Application Note USAGE AND APPLICATIONS OF 6-PIN MINI-MOLD, 6-PIN SUPER MINI-MOLD SILICON HIGH-FREQUENCY WIDEBAND AMPLIFIER MMIC µPC2711-15 µPC2745-49 µPC2791/92 µPC3210 Document No. P11976EJ2V0AN00 2nd edition Date Published May 1999 N CP(K) 1997
|
Original
|
PC2711-15
PC2745-49
PC2791/92
PC3210
P11976EJ2V0AN00
de88-6130
104 c1k capacitor
103 c1k capacitor
UPC2712T
marking code C1H mmic
marking code C1G mmic
uPC2749 equivalent
104 c1k
marking code C1L
UPC2713T
transistor marking C2s
|
PDF
|
TRANSISTOR BD 137-10
Abstract: No abstract text available
Text: CFS0303-SB Advanced Product Information March 2004 V1.3 1 of 16 Features ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) ❏ High Dynamic Range ❏ Low Current and Voltage. ❏ Bias Point 3V and 60 mA ❏ 0.3 dB noise figure at 2 GHz
|
Original
|
CFS0303-SB
OT-343)
TRANSISTOR BD 137-10
|
PDF
|
marking code C1G mmic
Abstract: 103 c1k marking code C1H mmic 104 c1k marking code C1L PC2711 UPC2712T UPC1688 POWER MINIMOLD marking code renesas
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
d88-6130
marking code C1G mmic
103 c1k
marking code C1H mmic
104 c1k
marking code C1L
PC2711
UPC2712T
UPC1688
POWER MINIMOLD marking code renesas
|
PDF
|
celeritek LNA
Abstract: CFS0303-SB-0G00 TRANSISTOR BD 137-10 PB-CFS0303-SB-00C0 CF003-03 CFS0303-SB CFS0303-SB-0G0T PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 TRANSISTOR BD 168
Text: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package May 2006 - Rev 23-May-06 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA
|
Original
|
23-May-06
CFS0303-SB
OT-343)
2400MHz
3500MHz
celeritek LNA
CFS0303-SB-0G00
TRANSISTOR BD 137-10
PB-CFS0303-SB-00C0
CF003-03
CFS0303-SB
CFS0303-SB-0G0T
PB-CFS0303-SB-00A0
PB-CFS0303-SB-00B0
TRANSISTOR BD 168
|
PDF
|
CFS0303-SB-0G00
Abstract: celeritek LNA CFS0303-SB-0G0T 22 GA TIN COPPER WIRE CF003-03 CFS0303-SB PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 PB-CFS0303-SB-00C0
Text: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package May 2008 - Rev 02-May-08 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA
|
Original
|
02-May-08
CFS0303-SB
OT-343)
2400MHz
3500MHz
CFS0303-SB-0G00
celeritek LNA
CFS0303-SB-0G0T
22 GA TIN COPPER WIRE
CF003-03
CFS0303-SB
PB-CFS0303-SB-00A0
PB-CFS0303-SB-00B0
PB-CFS0303-SB-00C0
|
PDF
|
CFS0303-SB-0G0T
Abstract: TRANSISTOR BD 137-10 PB-CFS0303-SB-00B0 transistor 2440 bd 9473
Text: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package May 2006 - Rev 23-May-06 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA
|
Original
|
23-May-06
CFS0303-SB
OT-343)
2400MHz
3500MHz
CFS0303-SB-0G0T
TRANSISTOR BD 137-10
PB-CFS0303-SB-00B0
transistor 2440
bd 9473
|
PDF
|
C41SWS
Abstract: 41aewt C41ASW-RA
Text: Attenuation and Average Power Cable Ordering Information Description Type No. High Power, High Tem perature Cable HST1-50 1/4" Cable Characteristics Electrical Im pedance, ohms M aximum Frequency, GHz Velocity, percent Peak Power Rating, kW dc Resistance, ohm s/1000 ft 1000 m
|
OCR Scan
|
HST1-50
dB/100m
C41SW
3074A
CT-K350
VCT8-10
T8-50
C41SWS
41aewt
C41ASW-RA
|
PDF
|
nbc 3101
Abstract: ha 1758 PACKAGE OUTLINE 83B bs 246 fet
Text: ULTRA LOW NOISE NE24283B PSEUDOMORPHIC HJ FET FEATURES_ NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz • GATE LENGTH: 0.25 Jim
|
OCR Scan
|
NE24283B
IS12S21I
NE24283B
24-Hour
nbc 3101
ha 1758
PACKAGE OUTLINE 83B
bs 246 fet
|
PDF
|
7505C
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. 5 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. D C f i r If I f f 3.81 ± 0 . 0 5 [.1 5 0 + . 0 0 2 ] 0 1 .1 4 + 0 .0 2 TYP. 0.76 + 0.05 [.0 3 0 + .002] [.0 4 5 + .001] BEFORE PLATING
|
OCR Scan
|
31MAR2000
06DEC05
us001193
\dmtmod\ECs\e01
7505clndia\1
Z86-8
146286V6
21NOV05
fr0t9285
7505C
|
PDF
|
ic HS 2272
Abstract: tg 56700 SR 13009 transistor sr 13009 transistor d 13009 IC tt 3034 0732 8m80 D 13009 K gi 9405
Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES . LOW VOLTAGE/LOW CURRENT OPERATION . HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE
|
OCR Scan
|
NE685
NEG85
OT-143)
NE68518-T1
NE68519-T1
NE68530-T1
NE68533-T1
NE68539-T1
NE68539R-T1
ic HS 2272
tg 56700
SR 13009
transistor sr 13009
transistor d 13009
IC tt 3034
0732
8m80
D 13009 K
gi 9405
|
PDF
|
