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    Diodes Incorporated ABS10M-13

    BRIDGE RECT 1PHASE 1KV 1A 4-SOPA
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    DigiKey ABS10M-13 Cut Tape 2,777 1
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    Avnet Silica ABS10M-13 3,000 10 Weeks 3,000
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    Panduit Corp BS10-D

    CONN SPLICE 10-12 AWG CRIMP
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    DigiKey BS10-D Bulk 2,016 1
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    Mouser Electronics BS10-D 7,201
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    Onlinecomponents.com BS10-D
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    Interstate Connecting Components BS10-D 3,268
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    Essentra Components LCBS-10-HT

    BRD SPT SNAP LOCK NYLON 5/8"
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    DigiKey LCBS-10-HT Bulk 1,981 1
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    Samtec Inc BBS-101-G-A

    CONN HEADER VERT 1POS
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    DigiKey BBS-101-G-A Bulk 1,349 1
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    Avnet Americas BBS-101-G-A Bulk 1 Weeks 1
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    Sager BBS-101-G-A 660 1
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    Rochester Electronics LLC ADSP-2171BS-104

    16-BIT DIGITAL SIGNAL PROCESSOR
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    DigiKey ADSP-2171BS-104 Bulk 957 5
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    BS10 Datasheets (183)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    BS-1000 Wakefield-Vette Hardware, Fasteners, Accessories - Structural, Motion Hardware - ALVES ZERO BACKLASH U-JOINT Original PDF
    BS-100.000MBB-T TXC Oscillators, Crystals and Oscillators, OSC SO 100.000MHZ LVPECL SMD Original PDF
    BS-100.000MBC-T TXC Oscillators, Crystals and Oscillators, OSC SO 100.000MHZ LVPECL SMD Original PDF
    BS-100.000MCB-T TXC Oscillators, Crystals and Oscillators, OSC SO 100.000MHZ LVPECL SMD Original PDF
    BS-100.000MCC-T TXC Oscillators, Crystals and Oscillators, OSC SO 100.000MHZ LVPECL SMD Original PDF
    BS1001-7R Power-One 100 Watt DC-DC Converters Original PDF
    BS1001-7R Power-One DC DC Converters, Power Supplies - External/Internal (Off-Board), DC/DC CONVERT 5.1V 16A Original PDF
    BS1001-7R-9 Power-One IC CONV DC-DC STEP DOWN 14 TO 70VIN Original PDF
    BS1001-7R-9G Power-One IC CONV DC-DC STEP DOWN 14 TO 70VIN Original PDF
    BS1001-7RB1 Power-One IC CONV DC-DC STEP DOWN 14 TO 70VIN Original PDF
    BS1001-7RB1G Power-One IC CONV DC-DC STEP DOWN 14 TO 70VIN Original PDF
    BS1001-7RD Power-One IC CONV DC-DC STEP DOWN 14 TO 70VIN Original PDF
    BS1001-7RDG Power-One IC CONV DC-DC STEP DOWN 14 TO 70VIN Original PDF
    BS1001-7REG Power-One IC CONV DC-DC STEP DOWN 14 TO 70VIN Original PDF
    BS1001-7RG Power-One IC CONV DC-DC STEP DOWN 14 TO 70VIN Original PDF
    BS1001-7RP Power-One IC CONV DC-DC STEP DOWN 14 TO 70VIN Original PDF
    BS1001-7RPG Power-One IC CONV DC-DC STEP DOWN 14 TO 70VIN Original PDF
    BS1001-7RT Power-One IC CONV DC-DC STEP DOWN 14 TO 70VIN Original PDF
    BS1001-7RTG Power-One IC CONV DC-DC STEP DOWN 14 TO 70VIN Original PDF
    BS1001-7RVG Power-One IC CONV DC-DC STEP DOWN 14 TO 70VIN Original PDF
    ...

    BS10 Datasheets Context Search

    Catalog Datasheet
    Type
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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BS108/D SEMICONDUCTOR TECHNICAL DATA Logic Level TMOS N-Channel Enhancement Mode T his T M O S FET is d e s ig n e d fo r high v o lta g e , high sp e e d switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high


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    BS108/D BS108 O-226AA) PDF

    Untitled

    Abstract: No abstract text available
    Text: My-Com precision switches MY-COM BS100 My-Com precision switches dimension drawing M8 x 0,5 1,5 ø 1 ø 7,4 2 30 18 SW 10 ø 8 general data photo repeatability < 0,001 mm activating force 100 cN mech. pre-run / overrun - / 1,5 mm approx. electrical data


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    BS100 PDF

    BS107

    Abstract: BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA
    Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage


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    BS107, BS107A BS107) BS107A) BS107/D BS107 BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA PDF

    vishay siliconix code marking

    Abstract: TN2404KL-TR1-E3 TO-92-18RM BS107KL TN2404K BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1 TN2404K-T1-E3
    Text: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V D-S MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL FEATURES D D D D D rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 BENEFITS


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    TN2404K/TN2404KL/BS107KL TN2404K TN2404KL/BS107KL O-226AA O-92-18RM 08-Apr-05 vishay siliconix code marking TN2404KL-TR1-E3 TO-92-18RM BS107KL TN2404K BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1 TN2404K-T1-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: My-Com precision switches MY-COM BS100 My-Com precision switches dimension drawing M8 x 0,5 1,5 ø 1 ø 7,4 2 30 18 SW 10 ø 8 general data photo repeat accuracy < 0,001 mm activating force 100 cN mech. pre-run / overrun - / 1,5 mm approx. electrical data


    Original
    BS100 PDF

    Untitled

    Abstract: No abstract text available
    Text: My-Com precision switches MY-COM BS100 My-Com precision switches dimension drawing M8 x 0,5 1,5 ø 1 ø 7,4 2 30 18 SW 10 ø 8 general data photo repeat accuracy < 0,001 mm activating force 100 cN mech. pre-run / overrun - / 1,5 mm approx. electrical data


    Original
    BS100 PDF

    bs100

    Abstract: No abstract text available
    Text: My-Com precision switches MY-COM BS100 My-Com precision switches dimension drawing M8 x 0,5 1,5 ø 1 ø 7,4 2 30 18 SW 10 ø 8 general data photo repeat accuracy < 0,001 mm activating force 100 cN mech. pre-run / overrun - / 1,5 mm approx. electrical data


    Original
    BS100 bs100 PDF

    BS108 relay driver

    Abstract: BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original
    BS108 BS108/D BS108 relay driver BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D PDF

    equivalent of BS107

    Abstract: BS107 VN2010L BS107 application
    Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W


    Original
    VN2010L/BS107 VN2010L BS107 O-226AA O-92-18RM 18-Jul-08 equivalent of BS107 BS107 VN2010L BS107 application PDF

    bs107 transistor

    Abstract: cr 406 transistor BS107 UCB700 transistor 406 specification
    Text: Philips Com ponents BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATU RES • Direct interface to C-M OS, T T L , etc. • High speed switching


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    BS107 MBB073 UCB700 bs107 transistor cr 406 transistor BS107 UCB700 transistor 406 specification PDF

    MBB691

    Abstract: BS108 UBB073
    Text: • PhilipsSemiconductor« ^ hb53=l31 0DS3?at 27t m APX PHILIPS/DISCRETE b ? E D P " *» "* .p ~ m c Mlon N-channel enhancement mode vertical D-MOS transistor FEATURES c BS108 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching


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    E372h BS108 MBB691 BS108 UBB073 PDF

    BS100D

    Abstract: bs100
    Text: SHARP E L E K / MELEC DIV 1SE D I Blue Sensitive Photodiode BS100D • 01 0 07 ^ 0 E I • ■ B S 100D Wide Wavelength Band Type Photodloîe^ Featu res Outline Dim ensions Unit : mm 1. Wide dynamic range (Capable of Ev = 10-3 ~ 104#x range measurament)


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    BS100D 55mm2 T-41-51 BS100D bs100 PDF

    pc123y22

    Abstract: gp2d04 GP2D021 GP1A040R GP2D12 IS471FsE GP2Y0A02YK S2S4A00F GP2S24BC GP2Y0A21YK
    Text: ES: Eric Sunderhaus, JD: Jeremy Dietz, RS: Robert Stuart PART NUMBER BS100C BS500B BS520 MKT INT JD JD JD PART DESCRIPTION / REPLACEMENT Blue Sens. PD Blue Sens. PD Blue Sens. PD Lead Free Part Number Lead Free Version of Replacement BS100C0F BS500B0F


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    BS100C BS500B BS520 BS100C0F BS500B0F BS520E0F GA102T1M1MZ GA201TXR1ZZ GA201TXR1ZY pc123y22 gp2d04 GP2D021 GP1A040R GP2D12 IS471FsE GP2Y0A02YK S2S4A00F GP2S24BC GP2Y0A21YK PDF

    BS107

    Abstract: No abstract text available
    Text: BS107 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR /Li T E M I ri I POWER SEMICONDUCTOR / Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets TO-92 Mechanical Data_ • • • • Case: TO-92 Plastic


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    BS107 MIL-STD-202, DS21804 BS107 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 


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    TN2404K/TN2404KL/BS107KL TN2404K TN2404K, BS107KL O-226AA O-92-18RM TN2404KL 2404KL 2002/95/EC. PDF

    BS107A equivalent

    Abstract: BS107 "direct replacement" BC237 BS107 BC108 characteristic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit VDS 200 Vdc VGS VGSM ± 20 ± 30 ID IDM 250 500 PD 350 mW TJ, Tstg – 55 to 150 °C Drain – Source Voltage


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    BS107 BS107A 226AA) Source218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BS107A equivalent BS107 "direct replacement" BC237 BC108 characteristic PDF

    Untitled

    Abstract: No abstract text available
    Text: BS109 N-Channel Enhancement Mode DMOS Transistor <-6 . 3.6 I- ' I ; Ì Features - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway


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    BS109 PDF

    ITT DIODE 129

    Abstract: diode ITT 129 bs108 ITT DIODE ITT Intermetall bs108 transistor ITT
    Text: BS108 N-Channel Enhancement Mode DMOS Transistor Features - high breakdown voltage - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input


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    BS108 1000mA ITT DIODE 129 diode ITT 129 bs108 ITT DIODE ITT Intermetall bs108 transistor ITT PDF

    Untitled

    Abstract: No abstract text available
    Text: My-Com precision switches MY-COM BS100 My-Com precision switches dimension drawing M8 x 0,5 1,5 ø 1 ø 7,4 2 30 18 SW 10 ø 8 general data photo repeat accuracy < 0,001 mm activating force 100 cN mech. pre-run / overrun - / 1,5 mm approx. electrical data


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    BS100 PDF

    Untitled

    Abstract: No abstract text available
    Text: BS107 VISHAY N -C H A N N E L E N H A N C E M E N T M O D E T R A N S IS T O R F e a t u r e s _ • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets


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    BS107 MIL-STD-202, DS21804 PDF

    Untitled

    Abstract: No abstract text available
    Text: BS108 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A TO-92 B Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7


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    BS108 MIL-STD-202, DS21801 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors BS107 Data sheet status Prelim inary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PIN CONFIGURATION FEATURES


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    BS107 -TO-92 MBB073 PDF

    TRANSISTOR SL 100

    Abstract: bs107a
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BS107A QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. Gate-source voltage open drain • High-speed switching Drain current (DC) • No second breakdown


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    BS107A TRANSISTOR SL 100 bs107a PDF

    Untitled

    Abstract: No abstract text available
    Text: My-Com precision switches MY-COM BS100 My-Com precision switches dimension drawing M8 x 0,5 1,5 ø 1 ø 7,4 2 30 18 SW 10 ø 8 general data photo repeat accuracy < 0,001 mm activating force 100 cN mech. pre-run / overrun - / 1,5 mm approx. measurement type


    Original
    BS100 PDF