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    BS107 Price and Stock

    Diodes Incorporated BS107PSTZ

    MOSFET N-CH 200V 120MA E-LINE
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    DigiKey BS107PSTZ Cut Tape 3,964 1
    • 1 $1.02
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    BS107PSTZ Ammo Pack 2,000 2,000
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    Avnet Americas BS107PSTZ Ammo Pack 8 Weeks 2,000
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    Mouser Electronics BS107PSTZ 3,059
    • 1 $0.89
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    • 100 $0.477
    • 1000 $0.35
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    Newark BS107PSTZ Cut Tape 1,330 1
    • 1 $0.926
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    • 100 $0.553
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    TME BS107PSTZ 1,688 1
    • 1 $0.839
    • 10 $0.728
    • 100 $0.502
    • 1000 $0.35
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    Avnet Silica BS107PSTZ 10 Weeks 2,000
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    Diodes Incorporated BS107P

    MOSFET N-CH 200V 120MA TO92-3
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    DigiKey BS107P Bulk 121 1
    • 1 $0.77
    • 10 $0.517
    • 100 $0.77
    • 1000 $0.25722
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    Mouser Electronics BS107P 7,934
    • 1 $0.71
    • 10 $0.517
    • 100 $0.356
    • 1000 $0.288
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    Arrow Electronics BS107P 1,145 40 Weeks 302
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    BS107P 5 40 Weeks 1
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    • 100 $0.3509
    • 1000 $0.2082
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    Newark BS107P Cut Tape 1,628 1
    • 1 $0.701
    • 10 $0.62
    • 100 $0.45
    • 1000 $0.383
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    TME BS107P 2,297 1
    • 1 $0.869
    • 10 $0.583
    • 100 $0.42
    • 1000 $0.392
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    Avnet Silica BS107P 42 Weeks 4,000
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    ES Components BS107P
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    Samtec Inc BBS-107-T-B

    CONN HEADER VERT 7POS 2.54MM
    Free Sample
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    DigiKey BBS-107-T-B Tube 54 1
    • 1 $2.71
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    • 1000 $1.25288
    • 10000 $1.07113
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    Avnet Americas BBS-107-T-B Tube 2 Weeks, 6 Days 1
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    Mouser Electronics BBS-107-T-B 193
    • 1 $1.98
    • 10 $1.98
    • 100 $1.54
    • 1000 $1.06
    • 10000 $0.67
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    Master Electronics BBS-107-T-B
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    • 1000 $1.254
    • 10000 $0.696
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    Sager BBS-107-T-B 1
    • 1 $1.98
    • 10 $1.98
    • 100 $1.24
    • 1000 $0.86
    • 10000 $0.8
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    Samtec Inc BBS-107-G-A

    CONN HEADER VERT 7POS 2.54MM
    Free Sample
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    DigiKey BBS-107-G-A Bulk 25 1
    • 1 $5.66
    • 10 $4.313
    • 100 $5.66
    • 1000 $2.65339
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    Avnet Americas BBS-107-G-A Tube 1 Weeks 1
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    Mouser Electronics BBS-107-G-A
    • 1 $3.74
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    Newark BBS-107-G-A Bulk 1
    • 1 $3.68
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    • 100 $2.95
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    Avnet Abacus BBS-107-G-A 3 Weeks 1
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    Master Electronics BBS-107-G-A
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    Sager BBS-107-G-A 297 1
    • 1 $3.74
    • 10 $3.74
    • 100 $2.59
    • 1000 $1.88
    • 10000 $1.74
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    onsemi BS107G

    MOSFET N-CH 200V 250MA TO92-3
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    DigiKey BS107G Bulk
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    Find more BS107 price and stock on Findchips.com

    BS107 Datasheets (97)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS107 Diodes N-CHANNEL ENHANCEMENT MODE TRANSISTOR Original PDF
    BS107 Infineon Technologies TRANS MOSFET N-CH 200V 0.13A 3TO-92 Original PDF
    BS107 Motorola TMOS Switching(N-Channel-Enhancement) Original PDF
    BS107 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF
    BS107 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF
    BS107 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF
    BS107 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF
    BS107 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BS107 Philips Semiconductors UHF power transistor Original PDF
    BS107 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BS107 Siemens SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Original PDF
    BS107 Siemens Original PDF
    BS107 Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original PDF
    BS107 Temic Semiconductors N-channel Enhancement-mode Mos Transistors Original PDF
    BS107 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BS107 Vishay Telefunken TRANS MOSFET N-CH 200V 0.12A 3TO-92-18RM Original PDF
    BS107 ITT Semiconductors VMOS Transistor Scan PDF
    BS107 Motorola Switchmode Datasheet Scan PDF
    BS107 Motorola European Master Selection Guide 1986 Scan PDF
    BS107 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    BS107 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BS107

    Abstract: BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA
    Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage


    Original     		PDF BS107, BS107A BS107) BS107A) BS107/D BS107 BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA

    vishay siliconix code marking

    Abstract: TN2404KL-TR1-E3 TO-92-18RM BS107KL TN2404K BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1 TN2404K-T1-E3
    Text: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V D-S MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL FEATURES D D D D D rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 BENEFITS


    Original     		PDF TN2404K/TN2404KL/BS107KL TN2404K TN2404KL/BS107KL O-226AA O-92-18RM 08-Apr-05 vishay siliconix code marking TN2404KL-TR1-E3 TO-92-18RM BS107KL TN2404K BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1 TN2404K-T1-E3

    equivalent of BS107

    Abstract: BS107 VN2010L BS107 application
    Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W


    Original     		PDF VN2010L/BS107 VN2010L BS107 O-226AA O-92-18RM 18-Jul-08 equivalent of BS107 BS107 VN2010L BS107 application

    Untitled

    Abstract: No abstract text available
    Text: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 


    Original     		PDF TN2404K/TN2404KL/BS107KL TN2404K TN2404K, BS107KL O-226AA O-92-18RM TN2404KL 2404KL 2002/95/EC.

    BS107A equivalent

    Abstract: BS107 "direct replacement" BC237 BS107 BC108 characteristic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit VDS 200 Vdc VGS VGSM ± 20 ± 30 ID IDM 250 500 PD 350 mW TJ, Tstg – 55 to 150 °C Drain – Source Voltage


    Original     		PDF BS107 BS107A 226AA) Source218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BS107A equivalent BS107 "direct replacement" BC237 BC108 characteristic

    Untitled

    Abstract: No abstract text available
    Text: BS107P Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC)


    Original     		PDF BS107P

    DA218

    Abstract: bs107 transistor BS107
    Text: BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B C Mechanical Data · · · · Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208


    Original     		PDF BS107 MIL-STD-202, DA21804 DA218 bs107 transistor BS107

    BS107

    Abstract: VN2010L
    Text: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D


    Original     		PDF VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 BS107 VN2010L

    BC107 characteristic

    Abstract: BC107 to92 BS107 BC107 to-92
    Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage


    Original     		PDF BS107, BS107A BS107) BS107A) BS107/D BC107 characteristic BC107 to92 BS107 BC107 to-92

    TO-92-18RM

    Abstract: bs107 equivalent of BS107 BS107 application BS107-TA bs107 transistor BS107KL BS107KL-TA BS107KL-TR1 BS107-TR1
    Text: Specification Comparison Vishay Siliconix BS107KL vs. BS107 Description: N-Channel, 200 V D-S MOSFET Package: TO-92-18RM Pin Out: Identical Part Number Replacements: BS107KL-TA Replaces BS107-TA BS107KL-TR1 Replaces BS107-TR1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF BS107KL BS107 O-92-18RM BS107KL-TA BS107-TA BS107KL-TR1 BS107-TR1 BS107KL BS107 TO-92-18RM equivalent of BS107 BS107 application BS107-TA bs107 transistor BS107-TR1

    Untitled

    Abstract: No abstract text available
    Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W


    Original     		PDF VN2010L/BS107 VN2010L BS107 O-226AA 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET BS107P ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS on =23Ω D G REFER TO BS107PT FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL VALUE UNIT Drain-Source Voltage VDS 200


    Original     		PDF BS107P BS107PT 100mA*

    Untitled

    Abstract: No abstract text available
    Text: BS107A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)250m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC)


    Original     		PDF BS107A

    BP317

    Abstract: BS107A MBB692
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


    Original     		PDF BS107A SC13b SCA54 137107/00/01/pp8 BP317 BS107A MBB692

    BS107

    Abstract: No abstract text available
    Text: BS107 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR /Li T E M I ri I POWER SEMICONDUCTOR / Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets TO-92 Mechanical Data_ • • • • Case: TO-92 Plastic


    OCR Scan     		PDF BS107 MIL-STD-202, DS21804 BS107

    Untitled

    Abstract: No abstract text available
    Text: BS107 VISHAY N -C H A N N E L E N H A N C E M E N T M O D E T R A N S IS T O R F e a t u r e s _ • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets


    OCR Scan     		PDF BS107 MIL-STD-202, DS21804

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors BS107 Data sheet status Prelim inary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PIN CONFIGURATION FEATURES


    OCR Scan     		PDF BS107 -TO-92 MBB073

    TRANSISTOR SL 100

    Abstract: bs107a
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BS107A QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. Gate-source voltage open drain • High-speed switching Drain current (DC) • No second breakdown


    OCR Scan     		PDF BS107A TRANSISTOR SL 100 bs107a

    Untitled

    Abstract: No abstract text available
    Text: BS107A J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and


    OCR Scan     		PDF BS107A bb53131 003b0ai 003b003

    BS107A

    Abstract: BS107 MOTOROLA
    Text: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TM OS Switching N-Channel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 us Symbol


    OCR Scan     		PDF BS107/D BS107 BS107A BS107A BS107 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - SEPT 93 FEATURES * 200 Volt VDS * R DS on =23£i REFER TO BS107PT FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tarnij=25°C


    OCR Scan     		PDF BS107PT 001G35S

    2904S

    Abstract: DS130
    Text: BS107,A* C A S E 29-04, S T Y L E 30 TO-92 TO-226AA MAXIMUM RATINGS Sym bol V a lu e U n it D ra in - S o u rc e V o lta g e R atin g VDS 200 Vdc G a te - S o u rc e V o lta g e VGS r 20 Vdc Id 'd m 250 500 m Adc Pd 3 50 mW T j ' ^"stg - 5 5 to 150 PC D ra in C u rre n t


    OCR Scan     		PDF BS107 O-226AA) 2904S DS130

    lt 2904

    Abstract: BS107 MOTOROLA
    Text: BS107,A* CASE 29-04, STYLE 30 TO-92 TO-226AA M A X I M U M R A T IN G S Rating Sym bol Value Unit VDS 200 Vdc VGS vgsm ±20 ±3 0 Vdc Vpk 'd 'DM 250 500 mAdc Pd 350 mW TMOS SWITCHING TJ' Tstg - 5 5 to 150 °C N-CHANNEL — ENHANCEM ENT Drain-Source Voltage


    OCR Scan     		PDF BS107 O-226AA) BS107A lt 2904 BS107 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N -C hannel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Vd S 200 Vdc Vg s Vg SM ±20 ±30 Vdc Vpk Id 'd m 250 500 pd 350 mW T ji Tstg -5 5 to 150 °C Drain - Source Voltage


    OCR Scan     		PDF BS107 BS107A O-226AA) BS107