THYRISTOR ts 602

Abstract: BYX30-200R BYX31 BYX30 BYX30-600R BYX30-200 INVERTER 50 kW BYX30-600 IEC134 DM51
Contextual Info: BYX30 SERIES T - 0 3 - 1 7 PHILIPS INTERNATIONAL SbE D • 711DfiEh 0041b04 440 « P H I N FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 D iffu sed s ilic o n d io d e s in D O -4 m e ta l e n v e lo p e s , c a p a b le o f a b s o r b in g tr a n s i e n t s .

BYX39 400

Abstract: BYX39 BYX39-1400 BYX39-1400R BYX39-600 BYX39-600R IEC134
Contextual Info: BYX39 SERIES r-ûi-\z_ - PHILIPS INT ERNATIONAL 5 L jE 711002b 0Dmb2G D IPHIN CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333—F005 Silicon diodes in a DO—4 metal envelope, capable of absorbing transients and Intended for use in power rectifier application.

byx30

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D B ^53=131 0 0 2 2 7 ^ 7 B A _ BYX30 SERIES 7^0 3 - 1 7 FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 Diffused silicon diodes in DO-4 m etal envelopes, capable of absorbing tran sien ts.

7Z66

Abstract: BYX39-1400 BYX39-600 016T oowe BYX39 BYX39-1400R BYX39-600R IEC134 BYX39 400
Contextual Info: AMER PH ILIPS/DISCRETE 25E ^53^31 D 0022Û1S 1 Hi BYX39 SERIES 7 = 0 1 -1 7 CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333— F005 Silicon diodes in a DO— 4 metal envelope, capable o f absorbing transients and Intended for use in power rectifier application.

BS933

Contextual Info: Edal SERIES BS933 SUB-MINIATURE SILICON HIGH VOLTAGE RECTIFIER PART NUMBER PIV VOLTS Io AMPS @ 40o C Vf @ Io @ 25o C Ir @ PIV @ 25o C BS933-50 BS933-60 BS933-70 BS933-80 BS933-100 BS933-120 BS933-150 5000 6000 7000 8000 10000 12000 15000 .65 .60 .55 .50 .45

Contextual Info: M A IN T E N A N C E TYPE BYX97 SERIES N AUER PHILIPS/DISCRETE 25E D B bL.53^31 0022653 B RECTIFIER DIODES Also available to BS9331-F130 Silicon rectifier diodes in metal envelopes similar to DO-5, intended for use in power rectifier applications. The series consists of the following types:

BYX39 400

Contextual Info: BYX39 SERIES _ CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333—F 00 5 Silicon diodes in a D O —4 metal envelope, capable o f absorbing transients and intended for use in power rectifier application. The series consists o f the following types:

BYX97-300

Abstract: BYX97 BYX97-300R
Contextual Info: BYX97 SERIES M AINTENANCE TYPE iILIPS INTERNATIONAL 5bE ]> • 7I10fl5b D041bS0 bll BI PH I N ~ T -O i~ I RECTIFIER DIODES Also available to BS9331-F130 Silicon rectifier diodes in metal envelopes similar to DO-5, intended for use In power rectifier applications.

byx30s

Abstract: BYX30-200 thyristor BT 605 BYX30 BYX30-200R BYX30-600 BYX30-600R IEC134
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • fabSBIB]. O D E S ? ^ 7 B BYX30 SERIES Â 7^ 0 3 - 1 7 FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 Diffused silico n diodes in DO-4 m etal en v elo p es, cap ab le of ab so rb in g tr a n s ie n ts .

Contextual Info: B Y X 3 0 SER IES _ FAST SOFT-RECOVERY RECTIFIER DIODES • W ith controlled avalanche A lso available to BS9333-F002 Diffused silicon diodes in DO-4 m etal envelopes, capable of absorbing tran sie n ts. They a re p rim arily intended for use in high-frequency power supplies, th y risto r

BU105

Abstract: BUY69 BU108 BU137 F014 transistor 5010 S010 BS-9000 BU137A
Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s BS9000 High Speed Rectifiers D C Tw no Number BS9331 BS9331 BS9331 BS9331 BS9331 F027 F027 F027 F027 F027 Commercia! Equivalent Case 1N3879/R 1N3880/R 1N3881/R 1 N3882/R 1N3883/R S010 S010 S010 S010 S010

Contextual Info: N AUER PHILIPS/DISCRETE =(□53=131 0 0 22647 3 H B YX96 SERIES 25E D A r-o i-i* RECTIFIER DIODES Also available to BS9331-F129 Silicon rectifier diodes in metal envelopes similar to DO-4, intended for use in power rectifier applications. The series consists of the following types:

Contextual Info: 25E D N AMER PHILIPS/DISCRETE • ^53^31 0022615 1 Bi BYX39 SERIES A 7= 0 1 -1 7 CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333—F005 Silicon diodes in a DO—4 metal envelope, capable o f absorbing transients and intended for use ip power

Contextual Info: BYX39 SERIES y V - PHILIPS INTERNATIONAL 5L.E D r - ¿ ? i - \ 7 711002b D D m b 2 G b^a • ! PHIN CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333—F005 Silicon diodes in a DO—4 metal envelope, capable of absorbing transients and intended fcr use in power

BYX96

Contextual Info: BYX96 SERIES A _ RECTIFIER DIODES A lso available to BS9331-F129 Silicon rectifier diodes in metal envelopes sim ilar to DO-4, intended fo r use in power rectifier applications. The series consists o f the follow ing types: Normal polarity cathode to stud : B Y X 9 6 -3 0 0 to 1600.

BYX30-200

Abstract: BYX30 BYX30-600 BYX30-200R BYX30-600R IEC134 BYX30200
Contextual Info: BYX30 SERIES T - 0 3 - 1 7 "p h i l i p s INTERNATIONAL SbE D • 711002b 0D41bD4 440 « R H I N FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 Diffused silicon diodes in DO-4 m etal envelopes, capable of absorbing tran sien ts.

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

CV9637

Abstract: cv8617 is920 equivalent IS920 cv7332 DO35 DIODE Is44 cv8790 CV7040 CV7875 IN4149
Contextual Info: Approved Products Small Signal Diodes Case Outlines Dimensions are in mm Case outline 1-90 - d ia1 65 -25*4 m inCathode end is denoted by broad colour band Commercial Equivalent Outline Rated VR Rated IF mA V F @ IF V mA DO-35 DO-35 DO-35 DO-35 DO-35 DO-35

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

IN4149

Abstract: cv8790 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 IN4448
Contextual Info: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JGDEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed "1 S " are Texas Instruments in-house numbers.

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest