MOSFET 11N80 Data sheet
Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250
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O-247
O-220
O-263
O-264
67N10
75N10
50N20
C2-10
C2-18
C2-20
MOSFET 11N80 Data sheet
MOSFET 11N80
6N80
IXTN 36N50 C
11n80
ixys ixtn 79n20
ixys ixtn 36n50
6n90
12n100
IRFP 640
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 75N10Q IXFT 75N10Q VDSS ID25 = 100 V = 75 A = 20 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR Maximum Ratings
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75N10Q
75N10Q
200ns
O-247
O-268
O-268AA
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 75N10Q IXFT 75N10Q VDSS ID25 = 100 V = 75 A = 20 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions Maximum Ratings VDSS
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75N10Q
75N10Q
200ns
O-247
O-268
O-268AA
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DSA003697
Abstract: No abstract text available
Text: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ 100 V 100 V TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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67N10
75N10
75N10
O-247
O-204
O-268
DSA003697
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Untitled
Abstract: No abstract text available
Text: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 100 V 100 V RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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67N10
75N10
O-247
O-268
O-204
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67N10
Abstract: 75N10 123B16
Text: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ 100 V 100 V TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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67N10
75N10
O-247
O-268
O-204
67N10
75N10
123B16
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IXTH75N10
Abstract: 75N10
Text: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 100 V 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V
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67N10
75N10
O-247
O-204
IXTH75N10
75N10
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75N10Q
Abstract: TO-247 AD TR 610 S
Text: Advanced Technical Information IXFH 75N10Q IXFT 75N10Q HiPerFETTM Power MOSFETs VDSS ID25 RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C
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75N10Q
200ns
O-247
O-268
O-268
75N10Q
TO-247 AD
TR 610 S
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXFH 75N10Q IXFT 75N10Q HiPerFETTM Power MOSFETs VDSS ID25 = 100 V = 75 A = 20 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings
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75N10Q
200ns
O-247
O-268
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75n15
Abstract: No abstract text available
Text: Advance Technical Information IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS
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75N15
75N15
O-247
O-268
O-268
728B1
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Untitled
Abstract: No abstract text available
Text: LT1223 100MHz Current Feedback Amplifier U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ 100MHz Bandwidth at AV = 1 1000V/µs Slew Rate Wide Supply Range: ±5V to ±15V 1mV Input Offset Voltage 1µA Input Bias Current 5MΩ Input Resistance 75ns Settling Time to 0.1%
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LT1223
100MHz
000V/Â
12-Bit
LT1223
LT1206
250mA/60MHz
LT1395
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75N15
Abstract: .75N15
Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous
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75N15
O-247
728B1
75N15
.75N15
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75N30
Abstract: No abstract text available
Text: Advance Technical Information IXTK 75N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 75 A Ω = 42 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 300
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75N30
O-264
728B1
123B1
728B1
065B1
75N30
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75N30
Abstract: No abstract text available
Text: Advance Technical Information IXTK 75N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 75 A Ω = 42 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Continuous ±20 V
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75N30
728B1
123B1
728B1
065B1
75N30
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75n15
Abstract: .75N15 IXTH75N15 MOSFET 450
Text: IXTH 75N15 IXTQ 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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75N15
O-247
728B1
123B1
728B1
065B1
75n15
.75N15
IXTH75N15
MOSFET 450
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UFT125
Abstract: UFT12510 UFT126 UFT12620 UFT12630 UFT12640 UFT12650 UFT127 UFT12760 UFT12770
Text: Dim. In ch e s Min. A B C E F G H N R U V W Y M lcrosem ! C a ta lo g N um ber U FT1 2 5 0 5 * U FT1 25 1 0 * Max. — 3,630 0.700 0.800 — 0.625 0.120 0.130 0.490 0.510 1.375 BSC -0.050 -0.280 0.310 3.150 BSC 0.600 0.330 0.350 0.170 0.190 46.10 BSC
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UFT12510*
Urri2520
UFT12620Â
UFT12
UFT125
UFT12510
UFT126
UFT12620
UFT12630
UFT12640
UFT12650
UFT127
UFT12760
UFT12770
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: Ultrafast Recovery Modules UFT 125, 126 & 127 - A - • Dim. Inches Min. V 1 ß t e Boseplot» A=Common Anode A — B 0.700 3.630 0.800 c -0.625 E 0.120 0.130 F 0.490 0.510 G 1.375 BSC H -0.050 -N -0.310
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UFT12505Â
UFT12510*
UFT12515*
UFT12520
UFT12620*
UFT12ics
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Untitled
Abstract: No abstract text available
Text: DIXYS ' Advanced Technical Information i IXFH 75N10Q IXFT 75N10Q HiPerFET Power MOSFETs DSS I D25 R DS on Q Class t_rr 100 75 20 200 V A mQ ns N-Channel Enhancement Mode Avalanche Rated High dv/dt Gate Charge and Capacitances Symbol Test Conditions V v DG„
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75N10Q
75N10Q
Cto150
O-247AD
O-268
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Untitled
Abstract: No abstract text available
Text: !3 IX ^ Y "S Advanced Technical Information VDSS IXFH 75N10Q IXFT 75N10Q HiPerFET Power MOSFETs Q-Class = 100 V = 75 A = 20 mQ ^D25 D DS on trr < 200ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt Low Gate Charge and Capacitances Symbol TestConditions
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75N10Q
200ns
-247A
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Untitled
Abstract: No abstract text available
Text: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol
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67N10
75N10
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310S2
Abstract: No abstract text available
Text: H I-5 6 1 8 A /5 6 1 8 B 8-Bit High Speed Digital-to-Analog Converters D escription Features • Very Fast Settling C u rren t Output 75ns Max • Minimal Nonlinearity Error @ 25°C : H I-5 6 1 8 A .± 1 /4 LSB Max H I-5 6 1 8 B . ± 1 /2 LSB Max
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IXYS DS 145
Abstract: No abstract text available
Text: PIXYS_ MegaMOS FET IXTH/IXTM 67N10 IXTH / IXTM 75N10 p v DSS ^D25 100 V 100 V 67 A 75 A DS on 25 mi] 20 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj =25°C to150°C 100 V VDQB T j = 25° C to 150° C; RGS= 1 M il 100 V VGS
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67N10
75N10
to150
75N10
O-247
T0-204
O-204
IXYS DS 145
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diode lt 247
Abstract: No abstract text available
Text: DIXYS HiPerFET Power MOSFETs IXFH 67N10 IXFH 75N10 VDSS ^D25 100 V 100 V 67 A 75 A V DSS Test Conditions ^ Maximum Ratings =25°C to150°C 100 V v DGR T j = 2 5 °C to 1 5 0 °C ; RGS=1 M£2 100 V Vos Continuous i2 0 V VGSM Transient d30 V ^ D25 Tc =25°C
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67N10
75N10
O-247
to150
diode lt 247
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