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    BSC200P03LS G Search Results

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    BSC200P03LS G Price and Stock

    Rochester Electronics LLC BSC200P03LSG

    P-CHANNEL POWER MOSFET
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    DigiKey BSC200P03LSG Bulk 13,641 693
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    Infineon Technologies AG BSC200P03LSGAUMA1

    MOSFET P-CH 30V 9.9/12.5A 8TDSON
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    DigiKey BSC200P03LSGAUMA1 Reel
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    Infineon Technologies AG BSC200P03LSG

    BSC200P03LSG
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    Verical BSC200P03LSG 8,671 800
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    Rochester Electronics BSC200P03LSG 13,641 1
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    BSC200P03LS G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSC200P03LS G Infineon Technologies P-Channel MOSFETs; Package: PG-TDSON-8; Package: SuperSO8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 20.0 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -; Original PDF
    BSC200P03LSGAUMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 12.5A TDSON-8 Original PDF

    BSC200P03LS G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -30 V RDS on ,max 20 mW ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications


    Original     		BSC200P03LS IEC61249-2-21 200P03LS PDF