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Catalog Datasheet	MFG & Type	Document Tags	PDF
NDC7001C Abstract: VX25 Text: National Semiconductor'" M arch 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS	OCR Scan	NDC7001C tS0113G Q03T7T3 NDC7001C VX25	PDF
NDP406BL Abstract: NDP508AEL MTP3055EL ndp706al NDP610AL NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL Text: *NSCS TO-220AB Logic Level DMOS \ Gii D, N Channel •o Pd Watts M ax 150 (m il) M ax (Amps/Volts) (Amps) Max 38 21/5 42 Device 60 NDP706AEL NDP710AL 42 21/5 40 NDP706BEL 13/5 26 100 NDP606AEL 12/5 24 NDP606BEL 120 7.5/5 15 60 NDP506AEL NDP708AEL 150 6.5/5	OCR Scan	O-220AB NDP710AEL NDP710AL NDP710BEL NDP710BL NDP610AEL NDP610AL NDP610BEL NDP610BL NDP510AEL NDP406BL NDP508AEL MTP3055EL ndp706al NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL	PDF
transistor s34 Abstract: MPSH11 MPS-H11 Text: è* Semiconductor MPSH11 I MMBTH11 D iscrete PO W ER & S ig n a l Technologies National MPSH11 SOT-23 M ark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 p A to	OCR Scan	MMBTH11 MPSH11 OT-23 bSD113D transistor s34 MPSH11 MPS-H11	PDF
mpsa14 Abstract: 43t SOT23 43t transistor Text: MPSA14 I MMBTA14 / PZTA14 D iscrete P O W E R & S ig n a l Technologies 6* National Semiconductor PZTA14 MMBTA14 MPSA14 SOT-23 B SOT-223 M ark: 1 N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from	OCR Scan	MPSA14 MMBTA14 PZTA14 MPSA14 MMBTA14 OT-23 OT-223 43t SOT23 43t transistor	PDF
2N3567 Abstract: NSDU07 transistor 2N3569 "NPN Transistors" 2n3567 NSD102 NSD458 2n3568 2N3569 92PU393 D40E5 Text: This 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40 35 20 2N1711 TO-5 75 35 7 10 60 40 100 75 35 20 120 120 300 150 10 5.0 1.3 150 20 50 50 12 500 150 10 100 fiA 10 10 10 10 1.5 1.3 150 25 60 50 12 Note 1 12 500 150 10 100 pA IO jiA	OCR Scan	b501L3a 0370MM T-27-CI T-27-01 2N3567 NSDU07 transistor 2N3569 "NPN Transistors" 2n3567 NSD102 NSD458 2n3568 2N3569 92PU393 D40E5	PDF
ST3904 Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712 Text: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.	OCR Scan		PDF
"NPN Transistors" 2n3567 Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06 Text: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40	OCR Scan	2N699 2N1613 2N1711 2N1890 to-202 tn3742 to-237 "NPN Transistors" 2n3567 NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06	PDF