NDC7001C
Abstract: VX25
Text: National Semiconductor'" M arch 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS
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NDC7001C
tS0113G
Q03T7T3
NDC7001C
VX25
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NDP406BL
Abstract: NDP508AEL MTP3055EL ndp706al NDP610AL NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL
Text: *NSCS TO-220AB Logic Level DMOS \ Gii D, N Channel •o Pd Watts M ax 150 (m il) M ax (Amps/Volts) (Amps) Max 38 21/5 42 Device 60 NDP706AEL NDP710AL 42 21/5 40 NDP706BEL 13/5 26 100 NDP606AEL 12/5 24 NDP606BEL 120 7.5/5 15 60 NDP506AEL NDP708AEL 150 6.5/5
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O-220AB
NDP710AEL
NDP710AL
NDP710BEL
NDP710BL
NDP610AEL
NDP610AL
NDP610BEL
NDP610BL
NDP510AEL
NDP406BL
NDP508AEL
MTP3055EL
ndp706al
NDP606AL
NDP405BL
NDP605AL
NDP405AL
NDP510AL
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transistor s34
Abstract: MPSH11 MPS-H11
Text: è* Semiconductor MPSH11 I MMBTH11 D iscrete PO W ER & S ig n a l Technologies National MPSH11 SOT-23 M ark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 p A to
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MMBTH11
MPSH11
OT-23
bSD113D
transistor s34
MPSH11
MPS-H11
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mpsa14
Abstract: 43t SOT23 43t transistor
Text: MPSA14 I MMBTA14 / PZTA14 D iscrete P O W E R & S ig n a l Technologies 6* National Semiconductor PZTA14 MMBTA14 MPSA14 SOT-23 B SOT-223 M ark: 1 N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from
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MPSA14
MMBTA14
PZTA14
MPSA14
MMBTA14
OT-23
OT-223
43t SOT23
43t transistor
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2N3567
Abstract: NSDU07 transistor 2N3569 "NPN Transistors" 2n3567 NSD102 NSD458 2n3568 2N3569 92PU393 D40E5
Text: This 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40 35 20 2N1711 TO-5 75 35 7 10 60 40 100 75 35 20 120 120 300 150 10 5.0 1.3 150 20 50 50 12 500 150 10 100 fiA 10 10 10 10 1.5 1.3 150 25 60 50 12 Note 1 12 500 150 10 100 pA IO jiA
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b501L3a
0370MM
T-27-CI
T-27-01
2N3567
NSDU07
transistor 2N3569
"NPN Transistors" 2n3567
NSD102
NSD458
2n3568
2N3569
92PU393
D40E5
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ST3904
Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
Text: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.
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"NPN Transistors" 2n3567
Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
Text: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40
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2N699
2N1613
2N1711
2N1890
to-202
tn3742
to-237
"NPN Transistors" 2n3567
NSE459
NSDU05
NSD458
2N6718 TO-237
2N3569
2N6593
2N5336
2N3567
MPSW06
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